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91.
Using a simple vapor phase transport technique, we have fabricated unique complex disk-shaped ZnO microstructures comprising a small disk coaxially grown on a large one and observed spatially perfect six-fold symmetric patterns. The observed results can be explained based on the spontaneous nanoindentation (NI) effect under the geometric constraints and the explanation can be extended to fathom the growth mechanism of other highly symmetrical ZnO nanostructures. Our results indicate that NI not only can elucidate the mechanical properties of surfaces and thin films but also is an effective approach to fabricate ordered nanostructures with high precision on the location of the building blocks. PACS 81.16.Rf; 81.07.-b; 81.05.Dz  相似文献   
92.
The effect of nitrogen surface doping on the electron field emission characteristics of hydrogenated amorphous carbon films was studied. It was found that the emission threshold electric field decreased after nitrogen surface doping which indicated the reduction of the emission barrier at the film surface. It was demonstrated that this improvement arose from the decrease of the effective work function due to the formation of a dipole layer induced by chemical termination and chemical structural change on the film surface. PACS 52.75.Xx; 73.30 +y; 73.61.Jc  相似文献   
93.
94.
LaAlO3 (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO2 layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p  相似文献   
95.
We compare the efficiency of two Faddeev-type approaches for the nuclear three-body Coulomb problem. The first one is a modification of Noble’s approach, the second one is due to Sasakawa and Sawada. In an integral-equation formulation both of these methods rely on the same Green’s operators and driving terms. The differences lie in the treatment of the long-range Coulomb potentials. Numerical examples show that the modified Faddeev-Noble approach provides for faster convergence.  相似文献   
96.
Let T be a bounded linear operator in a Banach space, with σ(T)={1}. In 1983, Esterle-Berkani' s conjecture was proposed for the decay of differences (I - T) T^n as follows: Eitheror lim inf (n→∞(n+1)||(I-T)T^n||≥1/e or T = I. We prove this claim and discuss some of its consequences.  相似文献   
97.
Differentiation of functions w.r.t. finite atomless measures with compact support on the real line is introduced. The related harmonic calculus is similar to that of the classical Lebesgue case. As an application we obtain the Weyl exponent for the spectral asymptotics of the Laplacians w.r.t. linear Cantor-type measures with arbitrary weights.  相似文献   
98.
D—AKNS族的换位表示   总被引:4,自引:0,他引:4  
乔志军 《应用数学》1991,4(4):64-70
本文根据曹策问教授的想法,求得了与D-AKNS族发展方程相联系的特征值之泛函梯度与Lenard算子对;并由此得到了D-AKNS族非线性发展方程的换位表示。文末还讨论了换位表示与定态D-AKNS方程之间的关系.  相似文献   
99.
The Bargaining Problem paradigm is extended to time-consuming conflict situations. Such a situation can be represented by a chain of bargaining domains, each representing the conflict at a different point in time. The solution function selects a point in the union of all these domains. We characterize a solution function which satisfies several requirements and explore its properties. One of the results is that an extension of the Adding requirement (Thomson-Myerson 1980) is enough, under some conditions, to yield a solution point, so there is no need to extend the stronger requirements of Independence of Irrelevant Alternatives (Nash 1950) or Monotonicity (Kalai-Smorodinsky 1975).  相似文献   
100.
The universal condition for the formation of omnidirectional band gaps (OBG) in photonic crystal (PC) was derived with consideration of permeability of the materials. And it was found that there are four kinds of PCs: one of them has no OBG, and one always possesses OBG. For the other two kinds of PCs, there are OBG for only TM or TE waves respectively. Moreover, in all PCs, the OBG can be broadened by decreasing the refractive index of the ambient medium or/and increasing the contrast between the wave impedances of the component materials of the PC. PACS 42.70.Qs; 71.20.Tx  相似文献   
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