A detailed investigation into the one-pot cascade reaction of ethyl 3,9-dimethyl-7-phenyl-6H-dibenzo-[b,d]pyran-6-one-8-carboxylate with phenylhydrazine

Research on Chemical Intermediates - When synthesizing cyclohexane-annulated pyrazolones from a cyclohexonedicarboxylate derivative with phenylhydrazine under the catalysis of sulfuric acid in the...     

Preparation of pillared layered antimony hydroxide and its flame retardancy in thermoplastic polyurethane

Journal of Thermal Analysis and Calorimetry - In this article, a pillared layered antimony hydroxide (Sb-LH) material has been prepared by the hydrothermal method. X-ray diffraction,...     

三维四翼广义增广Lü系统

增广Lü系统是仅含有两个控制参数的三维混沌系统,可产生一个伪四翼吸引子.利用混沌反控制方法,通过在增广Lü系统中引入一个简单的线性状态控制器,提出了一个新三维混沌系统——广义增广Lü系统.新系统实现了一个真正的具有复合结构的四翼吸引子,它包含了两个镜像对称的子系统.理论分析、数值仿真和电路实验证明了广义增广Lü系统四翼吸引子的存在性,也阐述了广义增广Lü系统有着较增广Lü系统更加丰富的动力学特性. 关键词： 广义增广Lü系统 四翼吸引子 数值仿真 电路实验     

离焦量对空气中激光诱导铜等离子体光谱特性的影响

利用Nd: YAG脉冲激光在空气中烧蚀金属Cu靶,获得等离子体光谱;采用改变离焦量的方法,研究了离焦量的变化对谱线结构及谱线强度的影响;分析了离焦量分别为1mm、0mm和-2mm时,沿靶面法线方向不同空间距离处电子温度的演化规律;并对等离子体光谱的特性和产生机制进行了讨论. 结果表明,谱线结构、谱线强度和等离子体的电子温度都与离焦量的变化密切相关,聚焦点在-2mm处CuⅠ谱线相对强度出现峰值,电子温度数值最大;聚焦点在-0.5mm和-1.0mm附近谱线相对强度遽然降低的现象是由于等离子体的屏蔽效应造成的.     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

Fracture in Ceramic-Matrix Composites Reinforced with Strongly Bonded Metal Particles

The resistance of a ceramic matrix composite to the cleavage cracking across a field of strongly bonded, uniformly distributed metal particles is studied. The crack trapping and bridging effects of the metal particles are analyzed by means of calculating the strain energy and the traction work. An explicit expression for the critical energy release rate as a function of particle volume fraction has been obtained. The fracture resistance is independent of elastic properties of the matrix and the sample geometry and is predominantly determined by the size/spacing ratio of the particles. It is shown that the theoretical curves agree with experimental data quite well. The methodology developed in this article can be used in studying the fracture resistances of composites with high filler contents and irregular filler geometries.__________Russian translation published in Mekhanika Kompozitnykh Materialov, Vol. 41, No. 3, pp. 303–318, May–June, 2005.     

一个新型的水下实况微光高速电视记录系统

介绍了一个新型的水下实况微光高速电视记录系统在船上或岸上使用该系统的控制系统,可对该系统的水下成像系统进行远程控制,并通过该水下成像系统得到水下运动目标的水下常速电视图像、水下高速电视图像和水下微光高速电视图像该系统的工作水深可达水下50m.     

大口径光学元件功率谱密度的统计法测量

针对ICF系统要求,提出了一种基于统计理论的大口径光学元件功率谱密度测量方法。该方法将大口径波前划分成足够多个子区域,分别求得每个子区域波前的功率谱密度,根据统计理论可将大口径波前功率谱密度表示为各个子区域波前功率谱密度的加权平均,其权重因子是各子区域对应的面积。模拟计算和实验结果验证了统计法测量的有效性,并表明当子区域个数大于等于8×8时,统计法测量和子孔径拼接测量得到的功率谱密度吻合较好。统计法测量对平台移动精度和环境稳定性要求不高,可应用于大口径光学元件功率谱密度的过程检测。     

二元光学元件衍射效率的逐层分析法研究

提出了一种有效的分析二元光学元件衍射效率的新方法－逐层分析法，并对四台阶二元器件，就蚀刻深度误差和横向对准误差对器件衍射效率的影响进行了详细的分析和讨论，证明了用该方法分析含有横向对准误差的二元光学元件的衍射效率非常简便有效。