Ferroelectric liquid crystals with axially chiral 2,2′-spirobiindan-1,1′-dione cores

The axially chiral mesogens 5-alkoxy-5′-[(4-alkoxybenzoyl)oxy]-2,2′-spirobiindan-1,1′-dione (QL7-n) were synthesised as racemic mixtures and resolved as single enantiomers by preparative chiral phase HPLC. The shorter homologues (R)-QL7-8 and QL7-9 form enantiotropic N* and SmC* phases, whereas the longer homologues (R)-QL7-10 and QL7-12 form an enantiotropic SmC* phase only. Texture analysis showed that the helical pitch of the N* phase is below the wavelength range of visible light; a helical pitch of 187 nm was measured at T – T_NI = –5 K by selective reflection using enantiomerically enriched mixtures of (R)- and (S)-QL7-8 (0.35 ≤ ee ≤ 0.80). Spontaneous polarisations were measured as a function of temperature in the SmC* phase by the triangular wave method. P_S values at saturation range from 102 nC cm^–2 for (R)-QL7-8 to 120 nC cm^?2 for (R)-QL7-9, which are up to three times greater than the highest polarisation previously reported for an axially chiral SmC* mesogen. Optical tilt angles θ were measured as a function of temperature and showed a sharp rise consistent with first-order N*–SmC* or I–SmC* transitions, with values at saturation ranging from 42 to 44°.     

A scalable synthesis of 1-amino-5-cyanonaphthalene,a precursor for a nitric oxide probe(NO550) designed via the "dye assembly" principle

A convenient and scalable synthesis of l-amino-5-cyanonaphthalene was described.     

Cu-catalyzed direct C–H amination of 2-alkylazaarenes with azodicarboxylates via nucleophilic addition

An efficient Cu-catalyzed C–H amination of 2-alkylazaarenes with azodicarboxylates has been developed through nucleophilic addition of sp³C–H bond to unsaturated nitrogen–nitrogen double bond. It provides an easy access to azaarene-containing hydrazines from simple and easily available starting materials.     

Recent research development of FinFETs

正The rapid development of CMOS technology is driven by the device scaling down. Classical MOS devices have encountered difficulties and challenges as scaling down to nanoscale [1], which seriously affects the device performance and limits the further development of CMOS technology.Because of the excellent control over short-channel effects and high current drive capability, novel multi-gate MOS