MOCVD生长的InGaN薄膜中InN分凝的研究

利用X射线衍射(XRD)技术测量了MOCVD生长的InGaN薄膜中的InN分凝量.利用Vegard定理和XRD 2θ扫描测得实验的InGaN薄膜的In组分为0.1～0.34.通过测量XRD摇摆曲线的InN(0002)和InGaN(0002)的积分强度之比测得InN在InGaN中的含量为0.0684%～2.6396%.根据XRD理论,计算出InN和InGaN的理论衍射强度.InN含量在所有样品中均小于3%,这表明样品的相分离度比较低.还发现InN在InGaN薄膜中的含量与氮气载气流量和反应室气压明显相关.     

光子选通光谱烧孔的全息检测与图像存贮

报道在有机光子选通光谱烧孔材料苯基四苯并卟啉锌/芳晴系统中，进行全息光谱烧孔和图像存贮的实验结果．实验表明全息烧孔极大地提高了光谱孔的检测灵敏度和信噪比．通过全息光子选通光谱烧孔，成功地进行了光子选通型的频率选择的多幅全息图存贮，得到清晰的图像再现 关键词：     

悬浮RDX炸药粉尘爆轰的数值模拟

用两相流模型对悬浮RDX炸药粉尘爆轰波进行了数值模拟。RDX炸药颗粒在爆轰波阵面后的高温高速气流中加速并升温,颗粒表面发生熔化。参考液滴在高速气流作用下剥离的效应,假设炸药熔化部分在高速气流的作用下发生剥离,破碎成极小的颗粒,瞬时发生分解反应,释放出能量支持爆轰波传播。数值模拟了在不同粒径和浓度的悬浮RDX炸药粉尘中爆轰波的发展与传播过程,得到了爆轰波流场中气-固两相的物理量分布,并确定了爆轰波参数。在较低的RDX粉尘浓度条件下,爆轰波阵面压力的峰值曲线出现振荡。当RDX粉尘浓度在80~150 g/m3时,数值模拟得到的爆轰波阵面压力峰值曲线的振荡是规则的;当RDX粉尘浓度为70 g/m3时,爆轰波阵面压力峰值曲线出现不规则振荡。     

Beam energy measurement system at BEPC Ⅱ

The beam energy measurement system at BEPCII is composed of there parts: laser source and optics system,laser-electron interaction system and High Purity Germanium(HPGe)detector system.The special components and construction of each part are introduced,especially about radiation background mea-surement in the storage ring,which is of great importance for the safe commissioning of HPGe detector.     

新奇纳米结构SiOx的自组织生长及其发光

采用化学气相沉积法,以纳米Mg2Si和SiO2的混合粉体作为硅源,在较低温度自组织生长了大量绳状SiOx新奇纳米结构。利用扫描电子显微镜、透射电子显微镜等手段对纳米结构进行了系统表征,并在室温观测到了光致发光,其发光峰峰位在560nm附近,在此基础上对该纳米结构的生长机理进行了深入的讨论。     

纯钛电极上的表面增强拉曼光谱研究

采用机械粗糙、电化学氧化还原、化学刻蚀等方法对纯钛电极表面进行粗糙,在钛基底上获得了表面增强拉曼光谱(SERS)信号。初步的实验结果表明,采用机械粗糙和电化学氧化还原方法能够获得具有一定粗糙度的电极表面,但是该表面并不具有SERS活性。而采用氢氟酸化学刻蚀方法能够获得具有SERS活性的表面,并且成功检测到吡啶分子的表面增强拉曼信号。实验尝试了在不同条件下进行刻蚀,对酸的刻蚀浓度、刻蚀时间、外接电位等影响因素作了研究,结果发现基底的SERS活性随氢氟酸浓度增大而出现最佳条件,即氢氟酸浓度0.33 Wt%,刻蚀时间为5 min时的拉曼信号最好。实验以0.01 mol·L-1吡啶为探针分子,0.1 mol·L-1 KCl为电解质,在开路电位下成功地观察了钛电极上的表面增强拉曼光谱。     

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HT-7上用于低杂波电流驱动的相控波导阵天线采用的是标准波导,长和宽都是有限值。在考虑了天线上下排波导之间可能存在的极向相位差以及电磁干扰时,通过数值模拟的方法,分别得到了低杂波在环向方向的平行功率谱和在极向方向的极向功率谱。由于极向波矢的存在,低杂波进入等离子体的入射方向会发生改变。最后在不同极向相位差下对低杂波进入等离子体的入射方向进行了简要的计算和讨论。     

Mechanism of Strain Rate Effect Based on Dislocation Theory

Based on dislocation theory, we investigate the mechanism of strain rate effect. Strain rate effect and dislocation motion are bridged by Orowan＇s relationship, and the stress dependence of dislocation velocity is considered as the dynamics relationship of dislocation motion. The mechanism of strain rate effect is then investigated qualitatively by using these two relationships although the kinematics relationship of dislocation motion is absent due to complicated styles of dislocation motion. The process of strain rate effect is interpreted and some details of strain rate effect are adequately discussed. The present analyses agree with the existing experimental results. Based on the analyses, we propose that strain rate criteria rather than stress criteria should be satisfied when a metal is fully yielded at a given strain rate.     

Bipartite entanglement in a two-qubit Heisenberg XXZ chain under an inhomogeneous magnetic field

This paper investigates the bipartite entanglement of a two-qubit Heisenberg XXZ chain under an inhomogeneous magnetic field. By the concept of negativity, we find that the inhomogeneity of the magnetic field may induce entanglement and the critical magnetic field is independent of Jz. We also find that the entanglement is symmetric with respect to a zero magnetic field. The anisotropy parameter Jz may enhance the entanglement.