In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

原电池示意图教学中的电子转移标注策略

对于某些学生而言,高中化学中的“原电池”内容是一道难以逾越的鸿沟。这些困难,部分是由于教师在教学中一些策略不当,部分则是因为学生在日常生活中形成的相异概念的干扰。在原电池示意图中标注电子转移这一策略,能够有效地帮助学生更科学地理解原电池的本质。现代认知心理学对表象表征的研究为此策略的使用提供了理论支持。     

纺织品中pH值的测定能力验证

为了了解国内纺织品检测机构对纺织品中pH值测定领域的整体水平,识别和掌握实验室存在的差异,加强纺织品检测机构的实验室能力建设,中国国家认证认可监督管理委员会(CNCA)组织了纺织品中pH值的测定能力验证活动,有16个省、市、直辖市的69个实验室参加,测试结果满意的实验室占78.26%.     

Sonochemical Preparation of Micro- and Nanometer Cu2O

Cu2O particles with different morphologies and scales were prepared sonochemically on the solid-liquid interface of CuCl and water, by adjusting the reaction factors. The products were characterized by powder X-ray diffraction（XRD） and scanning electron microscopy（SEM）. The formation and morphology of Cu2O crystals were influenced by high-intensity ultrasound, reaction temperature, and addition of CuCl. The results indicate that micrometer Cu2O was crystallized in cubic and octahedral shapes, whereas, nanometer Cu2O was not produced in well-shaped crystals.     

Spectroscopic study on the interaction between[Hg（SCN）4]2- and hemoglobin

The interaction between[Hg（SCN）₄]^2- and hemoglobin（Hb） under conditions that simulate a physiological environment was investigated by UV-vis spectroscopy,fluorescence spectroscopy,resonance Rayleigh scattering（RRS） spectroscopy and circular dichroism（CD） spectroscopy.The results obtained from the change of UV-vis and CD spectra,the quenching of Hb fluorescence and the enhancement of RRS intensity proved that a 10:1 type complex was formed between[Hg（SCN）₄]^2- and Hb.The possible mechanism suggested for the interaction was that ten Hg（SCN）₄]^2- anions entered the four subunits of a Hb molecule to react with some residues to form an adduct by coordination and electrostatic forces.The coordination of[Hg（SCN）₄]^2- with Trp was the major cause of the fluorescence quenching of Hb.     

基底温度控制方式对直流弧光放电PCVD金刚石膜的影响

如何精确、高效地实现对基底温度的测控,并获得优化的温度参数,对于CVD金刚石制备技术至关重要.本文采用自主研制的具有新型基底温度自动控制系统的直流弧光放电PCVD设备,分别进行了基底温度开环、闭环及开闭环复合控制下的金刚石薄膜制备研究,并采用SEM,激光Raman光谱仪对所制备薄膜的形貌品质进行了分析.研究结果表明:基底温控方式的不同会明显影响CVD金刚石膜的晶体、生长特征及品质,尤其造成了薄膜生长中二次形核密度以及非金刚石成分的显著变化;在保证系统稳定运行的前提下,当其它沉积参数恒定时,受控下的基底温度控制精度及控制品质的实时变化是影响CVD金刚石膜生长性能的主要因素,其中控制精度介于±5℃～±15℃间变化,而控制品质受控制方式的影响较大;相对于控制精度而言,控制品质的变化对常规金刚石薄膜生长性能的影响更为明显.对于此系统,只有采用开-闭环复合控制,且开环流量维持在其单独工作流量的20;时,才能保证基底温度控制精度、控制品质及所制备的CVD金刚石薄膜的质量最佳.     

硼掺杂VO2（M）纳米棒的合成、相转变及光学特性

采用V2O5和硼酸为原材料,草酸为还原剂,在水热条件下,成功制备出硼(B)掺杂VO2(B)纳米棒,经Ar气环境退火后,得到了V1-xBxO2(M)系列样品。样品的结构、形貌和相转变温度分别用X-射线粉末衍射(XRD)仪、扫描电子显微镜(SEM)和差示扫描量热仪(DSC)等进行表征。用X-射线光电子谱(XPS)来表征样品的组份和元素的价态,样品的红外光吸收谱也被测量。结果显示,当B掺杂达到2.0at%时,V1-xBxO2(M)相的转变温度升高到75.03℃。这个升高的相转变温度可归因于B3+替代V4+引起VO6八面体的晶格畸变,以及局域晶格电子密度的降低。     

On Symmetric Cayley Graphs of Valency Eleven

A Cayley graph Γ=Cay(G,S)is said to be normal if G is normal in Aut Γ.In this paper,we investigate the normality problem of the connected 11-valent symmetric Cayley graphs Γ of finite nonabelian simple groups G,where the vertex stabilizer Av is soluble for A=Aut Γ and v ∈ VΓ.We prove that either Γ is normal or G=A5,A10,A54,A274,A549 or A1099.Further,11-valent symmetric nonnormal Cayley graphs of A5,A54 and A274 are constructed.This provides some more examples of nonnormal 11-valent symmetric Cayley graphs of finite nonabelian simple groups after the first graph of this kind(of valency 11)was constructed by Fang,Ma and Wang in 2011.     

氮掺杂改性二氧化钛光催化剂的研究进展

综述了近年来国内外利用氮掺杂改性二氧化钛的光催化剂性能、提高可见光的利用效率的最新研究进展;分析和讨论了氮掺杂二氧化钛的制备方法、理论计算和结构模型、掺杂机理等;总结了氮掺杂改性二氧化钛存在的问题,同时讨论了今后的研究方向.