Component effects on the vanadium oxide thin films phase transition character phenomenon observed

We present what is, to the best of our knowledge, how the components affect the phase transition character of the vanadium oxide thin films. The vanadium oxide thin films are prepared on zinc selenide by a DC magnet sputtering method for the first time; the components are achieved by the x-ray photoelectron spectroscopy (XPS). The films are annealed to tune their components. A spectral transmittance study has been made from 2.5 to 25.0 μm. We can see that, except for doping, different components can change the phase transition characters of the films. The components can affect the phase transition temperature, hysteresis cycle, and the transmittance.     

Enhancement of Ne-like Ar 46.9 nm laser output by mixing appropriate He ratio at low pressure

With pure Ar and gaseous mixtures of Ar-He, the laser spike of Ne-like Ar 46.9 nm pumped by capillary discharge is measured with XRD (X-ray diode) at low pressure. We observe the effects of the Ar pressure and the He ratio on the amplitude of laser pulse. Compared with the laser spike of pure Ar, a mixture of Ar and a small quantity of He enhances the laser output. The time of lasing onset and the duration of laser pulses are not affected by mixing He. In addition, a monochromator is used to measure the laser pulse at 46.9 nm. This is the first observation of laser output with a Ar-He mixture.     

In situ SAXS study on size changes of platinum nanoparticles with temperature

Poly(vinylpyrrolidone) (PVP)-coated platinum (Pt) nanoparticles were prepared in methanol-water reduction method. In situ small-angle X-ray scattering (SAXS) and X-ray diffraction (XRD) techniques were used to probe the size change of particles and crystallites with temperature. Tangent-by-tangent (TBT) method of SAXS data analysis was improved and used to get the particle size distribution (PSD) from SAXS intensity. Scherrer’s equation was used to derive the crystallite size from XRD pattern. Combining SAXS and XRD results, a step-like characteristic of the Pt nanoparticle growth has been found. Three stages (diffusion, aggregation, and agglomeration) can be used to describe the growth of the Pt nanoparticles and nanocrystallites. Aggregation was found to be the main growth mode of the Pt nanoparticles during heating. The maximum growth rates of Pt nanoparticles and Pt nanocrystallites, as well as the maximum aggregation degree of Pt nanocrystallites were found, respectively, at 250 °C, 350 °C and 300 °C. These results are helpful to understanding the growth mode of nanoparticles, as well as controlling the nanoparticle size.     

Investigation on the output energy characteristic of optical limiting based on stimulated Brillouin scattering

Stimulated Brillouin scattering (SBS) featuring sub-nanosecond response time takes place at a high power threshold, which enables its application at a high power density. When the intensity of input light excesses the SBS threshold, strong SBS process takes place through SBS medium, leading to a quick energy transfer from pump to the Stokes and thereby an optical limiting characteristic in the output energy. In this paper, the correlation between SBS output energy and input power density is numerically simulated and validated in the Nd: YAG Q-switch laser system. The results indicate that not only the output energy exhibits an optical limiting characteristic, but also the clamped value of output energy can be controlled by changing the medium or the focal length.     

Non-equilibrium phase transition of the fully frustrated square lattice Coulomb gas model

The non-equilibrium phase transitions of the fullyfrustrated (f = 1/2) square lattice Coulomb gas (CG) modeldriven by external electrical fields are studied in the frameworkof the short-time dynamic scaling approach. The criticaltemperature T_c, the static and dynamic critical exponents2β/ν, ν, and z are obtained for several smalldriving fields. The results show that T_c decreases with theincrease of electric field, and 2β/ν and z arestrongly dependent on the external electric field. Interestingly,contrary to the equilibrium case, in the presence of smallelectric field, the calculated exponent ν is close to that inpure 2D Ising model, which provides numerical evidence thatexternal electric field may change the universality class of thef = 1/2 CG system.     

AWG-based WDM-PON monitoring system using an optical switch and a WDM filter

A new WDM-PON scheme with real-time monitoring based on a time-sharing method is proposed. It uses an optical time domain reflectometer (OTDR) to monitor multiple ports by integrating an optical switch (OSW) with a dense wavelength division multiplexer (DWDM) at the optical line terminal (OLT) site. Each downstream signal and its corresponding monitoring signal are separated by m times the free-space range (FSR) of an array waveguide grating (AWG). A bit error rate (BER) test in 2.5 Gb/s × 27 km is performed with and without turning on the OTDR. A small power penalty of 0.7 dB is observed compared to the back-to-back measurement.     

Structural and compositional heterogeneities in liquid aluminosilicate: insight from a grain structure model

Network structure as well as structural and compositional heterogeneities in aluminosilicate (Al₂O₃-2SiO₂) under compression is investigated by analysis and visualization of simulation data. Structural and compositional heterogeneities are clarified through analysis of topology structure and size distribution of TO _x -clusters (T = Si, Al; x = 3, 4, 5, 6) as well as OT _y -clusters (y = 2, 3, 4). The TO _x -cluster can be considered as TO _x -grains. It appears that the structure of aluminosilicate is the mixture of TO _x -grains with a different short-range order structure and this is the origin of structural heterogeneity. Regarding their composition, the OSi _y - and OAl _y -clusters can be considered as silica- and alumina-grains respectively, and the structure of aluminosilicate can thus be considered to be formed from silica- and alumina-grains. This results in compositional heterogeneity. Moreover, the degree of polymerization and polyamorphism as well as dynamic heterogeneity is also discussed in detail.     

Large third-order nonlinear optical properties of C70 fullerene in the infrared regime

The nonlinear third-order optical susceptibility of C₇₀ in a toluene solution is measured for the first time by the method of degenerate four-wave mixing using 10 ns laser pulses at 1.06 m. The third-order susceptibility X _in ⁽³⁾ is 5.6×10^–12 esu for a C₇₀ toluene solution at a concentration of 0.476 g/l. The correspondent magnitude of the hyperpolarizability ₁₁₁₁ of the C₇₀ molecule is 1.2×10^–30 esu which is in a good agreement with the prediction given by the model of a free electron in a spherical box.     

Design trade-offs in optoelectronic parallel processing systems using smart-SLMs

Optoelectronic devices with free-space optical interconnections offer new possibilities in massively parallel processing. The trade-offs involved in system design and device selection for optoelectronic implementations are examined. System design trade-offs are approached from algorithmic and technological standpoints. From the algorithmic standpoint, new architectures based on expander graphs, that have been shown to provide low-contention fault-tolerant communication, are discussed. Optoelectronic systems which implement such random graphs can be folded to reduce the hardware cost or unfolded to increase bandwidth. They can also be partially folded by increasing the grain size or by reducing the randomness of the graph topology to reduce the complexity of the interconnection holograms. An optoelectronic and a VLSI implementation of a multistage interconnection network are compared from a technological standpoint. Physical design parameters, such as the chip size or the number of phase levels of the interconnection holograms, are related to the system design metrics such as bandwidth, volume, area and power. It is shown that the optoelectronic implementations have higher performance and are more cost-effective than VLSI implementations. These results are also used to provide general guidelines for device selection in the design of smart pixels/smart spatial light modulators based optoelectronic systems.