Experiments with longitudinally polarized electrons in a storage ring using a siberian snake

We report on first measurements with polarized electrons stored in a medium-energy ring and with a polarized internal target. Polarized electrons were injected at 442 MeV (653 MeV), and a partial (full) Siberian snake was employed to preserve the polarization. Longitudinal polarization at the interaction point and polarization lifetime of the stored electrons were determined with laser backscattering. Spin observables were measured for electrodisintegration of polarized 3He, with simultaneous detection of scattered electrons, protons, neutrons, deuterons, and 3He nuclei, over a large phase space.     

Production of Upsilon(1S) mesons from chi(b) decays in p&pmacr; collisions at sqrt

We have reconstructed the radiative decays chi(b)(1P)-->Upsilon(1S)gamma and chi(b)(2P)-->Upsilon(1S)gamma in p&pmacr; collisions at sqrt[s] = 1.8 TeV, and measured the fraction of Upsilon(1S) mesons that originate from these decays. For Upsilon(1S) mesons with p(Upsilon)(T)>8.0 GeV/c, the fractions that come from chi(b)(1P) and chi(b)(2P) decays are [27.1+/-6.9(stat)+/-4. 4(syst)]% and [10.5+/-4.4(stat)+/-1.4(syst)]%, respectively. We have derived the fraction of directly produced Upsilon(1S) mesons to be [50.9+/-8.2(stat)+/-9.0(syst)]%.     

Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy

The importance of thin films in modern high technology products, such as semiconductors, requires fast and non-destructive analysis. A methodology to determine the thickness of single layers with benchtop energy dispersive X-ray fluorescence (EDXRF) instrumentation is described and tested following analytical validation criteria. The experimental work was carried out on gallium nitride thin films epitaxially grown on sapphire substrate. The results of samples with layers in the range from 400 to 1000 nm exhibit a good correlation with the layer thickness determined by optical reflectance. Spectral data obtained using thin layered samples indicate the possibility to precisely evaluate layer thickness from 5 nm, with a low relative standard deviation (RSD < 2%) of the results. In view of the limits of optical reflectance for very thin layer determination, EDXRF analysis offers the potential for the thickness determination of such kind of samples.     

Crystal growth, characterization and spectroscopic study of europium-doped NaY(PO3)4

Europium-doped NaY(PO₃)₄ single crystals have been synthesized by the flux method with sizes around 1 mm³. The unit cell parameters at room temperature refined by X-ray powder diffraction are a=7.1510(4) Å; b=13.0070(8) Å; c=9.6973(2) Å; β=90.606(3)°, Z=4 with the space group P2₁/n in monoclinic system. The present single crystals have a needle shape, they are elongated along the a crystallographic direction, and their size is in the 500 μm–1 mm range. The linear thermal expansion tensor parameters were determined, being the maximum value along the b direction, 16.1×10⁻⁶ K⁻¹ and the minimum along the a direction being 11.7×10⁻⁶ K⁻¹. The IR vibration modes attributed to the group P–O are consistent with the crystallographic data concerning the chain aspect of the phosphate anion. This material melts incongruently at 1141 K. Intense visible emissions attributed to Eu^{3+ 5}D₀→⁷F₁, ⁵D₀→⁷F₂ and ⁵D₀→⁷F₄, electronic transitions have been observed after pumping at 355 nm at room temperature.     

Identifying Two-Dimensional <Emphasis Type="Italic">Z</Emphasis><Subscript>2</Subscript> Antiferromagnetic Topological Insulators

We revisit the question of whether a two-dimensional topological insulator may arise in a commensurate Néel antiferromagnet, where staggered magnetization breaks the symmetry with respect to both elementary translation and time reversal, but retains their product as a symmetry. In contrast to the so-called Z₂ topological insulators, an exhaustive characterization of antiferromagnetic topological phases with the help of topological invariants has been missing. We analyze a simple model of an antiferromagnetic topological insulator and chart its phase diagram, using a recently proposed criterion for centrosymmetric systems [13]. We then adapt two methods, originally designed for paramagnetic systems, and make antiferromagnetic topological phases manifest. The proposed methods apply far beyond the particular examples treated in this work, and admit straightforward generalization. We illustrate this by two examples of non-centrosymmetric systems, where no simple criteria have been known to identify topological phases. We also present, for some cases, an explicit construction of edge states in an antiferromagnetic topological insulator.