An optically thin radiating gas jet

A radiating gas jet near the optically thin limit is examined. The gas is assumed to be inviscid, optically grey, and in the state of chemical equilibrium or to obey the ideal gas law. The jet is assumed to be plane-symmetric or axi-symmetric and is fully expanded. Under these conditions and by the method of quasi-one-dimensional flow, the problem is analyzed. In addition to this, numerical examples are also included to illustrate the radiative effects.

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Zusammenfassung Es wird ein strahlender Gasstrahl untersucht, nahe zum optisch dünnen Grenzfall. Das Gas wird reibungsfrei, optisch grau und im chemischen Gleichgewicht (oder als ideales Gas) vorausgesetzt. Der Strahl wird eben oder axisymmetrisch angenommen und ist voll expandiert. Unter diesen Voraussetzungen und mit der Methode der fast-eindimensionalen Strömung wird das Problem analysiert. Zudem sind numerische Beispiele angegeben, um den Strahlungseffekt zu veranschaulichen.

     

Residual stresses and mechanical properties of a ZnO pyroelectric sensor

The multilayer composite film stack is a common feature of the microsensors based on thin film technology. In this paper, we propose an analytical model to investigate the Young’s moduli, hardness, and residual stresses of the constitutive film layers of a multilayer film stack. A multilayer film stresses model is derived to evaluate the residual stress distributions in the constitutive film layers of a ZnO pyroelectric sensor. A good agreement among the multilayer film stresses model, the grain morphologies characterized by scanning electron microscopy, the mechanical properties testing by nanoindentation, and the voltage responsivity measurement of the ZnO pyroelectric sensor is found in this paper. The proposed multilayer film stresses model can therefore be used to quantitatively analyze the film stresses and proceed to the optimization of thin film deposition process.     

Well-posedness of Cauchy problem for the fourth order nonlinear Schrödinger equations in multi-dimensional spaces

We study the well-posedness of Cauchy problem for the fourth order nonlinear Schrödinger equations

     

MOLECULAR AND SUPRAMOLECULAR ORDERING IN CONFINED ENVIRONMENTS

Crystal and phase morphologies and structures determined by self-organization of crystalline-amorphous diblockcopolymers, crystallization of the crystallizable blocks, and vitrification of the amorphous blocks are reviewed through asystematic study on a series of poly(ethylene oxide)-b-polystyrene (PEO-b-PS) diblock copolymers. On the base ofcompetitions among these three processes, molecular and supramolecular ordering in confined environments can beinvestigated. In a concentration-fluctuation-induced disordered (D_(CF)) diblock copolymer, the competition between crystalli-zation of the PEO blocks and vitrification of the PS blocks is momtored by time-resolved simultaneous small angle X-rayscattering (SAXS) and wide angle X-ray diffraction (WAXD) techniques. In the case of T_c相似文献   

Laser direct imaging of transparent indium tin oxide electrodes using high speed stitching techniques

To accomplish an electrode patterning in large area, we present a high speed stitching technique used in an ultraviolet laser processing system and investigate the interaction between laser beams and indium tin oxide (ITO) thin films deposited on glass substrates. After optimizing the process parameters of the laser direct imaging (LDI) for the large-area electrode patterning, the ablated lines looked like regularly fish-scale marks of about a 40 μm diameter and a 120 nm depth around the processing path. The parameters includes the laser power of 1W, the scanning speed of galvanometers of 800 mm/s, and the laser pulse repetition frequency of 50 kHz. Moreover, the resistance value of the ablated ITO thin film is larger than 200MΩ that is electrically insulated from the other regions of electrode structure. LDI technology with UV laser beam has great potential applications in patterning on wafer or sapphire substrates and patterning a conductive layer deposited on the touch panels for semiconductor and optoelectric industries, respectively.