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111.
V. Edon M.C. Hugon B. Agius L. Miotti C. Radtke F. Tatsch J.J. Ganem I. Trimaille I.J.R. Baumvol 《Applied Physics A: Materials Science & Processing》2006,83(2):289-293
The influence of processing parameters on the electrical characteristics of RuO2/LaAlO3/Si metal-oxide-semiconductor structures was investigated. In particular, the sputtering regime during deposition of LaAlO3 on Si and the atmosphere used in the post-deposition annealing step were addressed by determining capacitance-voltage and
gate current-voltage characteristics. These results were correlated with compositional information obtained by Rutherford
backscattering spectrometry and nuclear reaction analysis. A post-deposition annealing step in oxygen at 600 °C resulted in
better electrical characteristics of the final structure as compared to the same treatment performed in nitrogen. This result
is explained by oxygen ability to heal oxygen vacancies in the LaAlO3 film, especially at the dielectric/semiconductor interface region. A thermalized sputtering regime during deposition of LaAlO3 on Si leads to capacitors with electrical characteristics superior to those deposited in ballistic regime.
PACS 77.84.Dy; 81.15.Cd; 81.40.Gh; 73.40.Qv; 82.80.Yc 相似文献
112.
113.
Benjamin J. K. Evans Susan M. Scott Antony C. Searle 《General Relativity and Gravitation》2002,34(10):1675-1684
We have developed a new tool for numerical work in General Relativity: GRworkbench. We discuss how GRworkbench's implementation of a numerically-amenable analogue to Differential Geometry facilitates the development of robust and chart-independent numerical algorithms. We consider, as an example, geodesic tracing on two charts covering the exterior Schwarzschild space-time. 相似文献
114.
K. C. Shin 《Communications in Mathematical Physics》2002,229(3):543-564
We study the eigenvalue problem with the boundary conditions that decays to zero as z tends to infinity along the rays , where is a real polynomial and . We prove that if for some we have for all , then the eigenvalues are all positive real. We then sharpen this to a larger class of polynomial potentials.
In particular, this implies that the eigenvalues are all positive real for the potentials when with , and with the boundary conditions that decays to zero as z tends to infinity along the positive and negative real axes. This verifies a conjecture of Bessis and Zinn-Justin.
Received: 16 January 2002 / Accepted: 1 May 2002 Published online: 6 August 2002 相似文献
115.
Yasuyuki Kawahigashi 《Communications in Mathematical Physics》2002,226(2):269-287
We study the recent construction of subfactors by Rehren which generalizes the Longo–Rehren subfactors. We prove that if
we apply this construction to a non-degenerately braided subfactor N⊂M and α±-induction, then the resulting subfactor is dual to the Longo–Rehren subfactor M⊗M
opp⊂R arising from the entire system of irreducible endomorphisms of M resulting from αplusmn;-induction. As a corollary, we solve a problem on existence of braiding raised by Rehren negatively. Furthermore, we generalize
our previous study with Longo and Müger on multi-interval subfactors arising from a completely rational conformal net of factors
on S
1 to a net of subfactors and show that the (generalized) Longo–Rehren subfactors and α-induction naturally appear in this context.
Received: 11 September 2001 / Accepted: 7 October 2001 相似文献
116.
The structural evolution in amorphous silicon and germanium thin films has been investigated by high-resolution transmission electron microscopy (HRTEM) in conjunction with autocorrelation function (ACF) analysis. The results established that the structure of as-deposited semiconductor films is of a high density of nanocrystallites embedded in the amorphous matrix. In addition, from ACF analysis, the structure of a-Ge is more ordered than that of a-Si. The density of embedded nanocrystallites in amorphous films was found to diminish with annealing temperature first, then to increase. The conclusions also corroborate well with the results of diminished medium-range order in annealed amorphous films determined previously by a variable coherence microscopy method. 相似文献
117.
Julio Castellanos 《Mathematische Zeitschrift》2002,239(4):777-802
We consider complete ideals supported on finite sequences of infinitely near points, in regular local rings with dimensions
greater than two. We study properties of factorizations in Lipman special *-simple complete ideals. We relate it to a type
of proximity, linear proximity, of the points, and give conditions in order to have unique factorization. Several examples
are presented.
Received: 2 February 2000 / in final form: 14 March 2001 / Published online: 18 January 2002 相似文献
118.
119.
120.
Possible Loss and Recovery of Gibbsianness¶During the Stochastic Evolution of Gibbs Measures 总被引:1,自引:1,他引:0
A.C.D. van Enter R. Fernández F. den Hollander F. Redig 《Communications in Mathematical Physics》2002,226(1):101-130
We consider Ising-spin systems starting from an initial Gibbs measure ν and evolving under a spin-flip dynamics towards a
reversible Gibbs measure μ≠ν. Both ν and μ are assumed to have a translation-invariant finite-range interaction. We study
the Gibbsian character of the measure νS(t) at time t and show the following:
(1) For all ν and μ, νS(t) is Gibbs for small t.
(2) If both ν and μ have a high or infinite temperature, then νS(t) is Gibbs for all t > 0.
(3) If ν has a low non-zero temperature and a zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t and non-Gibbs for large t.
(4) If ν has a low non-zero temperature and a non-zero magnetic field and μ has a high or infinite temperature, then νS(t) is Gibbs for small t, non-Gibbs for intermediate t, and Gibbs for large t.
The regime where μ has a low or zero temperature and t is not small remains open. This regime presumably allows for many different scenarios.
Received: 26 April 2001 / Accepted: 10 October 2001 相似文献