New search for processes violating the Pauli exclusion principle in sodium and in iodine

In this paper a new search for non-Paulian nuclear processes, i.e. processes normally forbidden by the Pauli Exclusion Principle (PEP), is presented. It has been carried out at the Gran Sasso National Laboratory of the INFN by means of the highly radiopure DAMA/LIBRA set-up (sensitive mass of about 250 kg highly radiopure NaI(Tl)). In particular, a new improved upper limit for the spontaneous non-Paulian emission rate of protons with energy E _p ≥ 10 MeV in ²³Na and ¹²⁷I has been obtained: 1.63 × 10⁻³³ s⁻¹ (90% C.L.). The corresponding limit on the relative strength (δ ²) for the searched non-Paulian transition is δ ²≲(3–4)×10⁻⁵⁵ (90% C.L.). Moreover, PEP-violating electron transitions in iodine atoms have also been investigated. Lifetimes shorter than 4.7×10³⁰ s are excluded at 90% C.L.; this allows us to derive the limit δ _e ²<1.28×10⁻⁴⁷ (90% C.L.). This latter limit can also be related to a possible finite size of the electron in composite models of quarks and leptons providing superficial violation of the PEP; the obtained upper limit on the electron size is r ₀<5.7×10⁻¹⁸ cm (energy scale of E≳3.5 TeV).     

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

In this paper ZnO films are grown on GaAs/Al₂O₃ substrates at different temperature by metal-organic chemical vapor deposition (MOCVD). The GaAs/Al₂O₃ substrates are formed by depositing GaAs layer (∼35 nm) on the Al₂O₃ substrate. The results of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) demonstrate that most of the Ga and As atoms form Ga-As bond and the GaAs layer does not present any orientation. The characters of the ZnO films grown on GaAs/Al₂O₃ substrates are investigated by XRD, photoluminescence (PL), atomic force microscopy (AFM) and Raman scattering. Compared with ZnO film grown on Al₂O₃ substrate, ZnO film prepared by our fabrication scheme has good crystal and optical quality. Meanwhile its grain size becomes bigger according to the AFM image. Raman analysis indicates that the intrinsic defects and the in-plane tensile stress are obviously reduced in ZnO/GaAs/Al₂O₃ samples.     

EAST装置内置低温冷凝泵低温分配阀箱的研制

在全超导磁约束核聚变试验装置EAST中,为了防止杂质从偏虑器靶板附近进入等离子体核心,为EAST长脉冲放电试验提供持续的排灰能力以及装置长冲放电等,低温冷凝泵是必不可少的部件之一,在装置真空室上下安装了内置低温凝泵以提高装置运行参数,为满足低温泵的低温条件,增加一低温分配阀箱给内置低温冷凝泵提供低温条件。文中介绍应用于EAST装置系统中的内置低温冷凝泵分配阀箱研制的技术要求、冷却流程、结构特征。     

大学物理实验综合性项目设计与教学实践初探

本文介绍了在大学物理实验课程中引入综合性实验内容,从具体项目的确立,到教学的操作实施过程;从查阅文献制订实验方案、实施具体的实验步骤及撰写实验报告等各个方面,如何在各个教学环节中注重对学生科研设计能力的初步培养进行了阐述;并对实验的成绩评定方法做了一些有益的探讨．     

中药黄柏主要活性成分的光谱成像检测技术

为了实现中药主要活性成分的在体检测,运用光谱成像技术检测中药活性成分.使用自行开发的液晶光谱成像装置对中药黄柏的主要活性成分盐酸小檗碱进行了在体检测,选取紫外光源波长254 nm,获取了检品480～700 nm之间的连续荧光光谱图像.在分析检品光谱剖面图的基础上,以中国药品生物制品检定所提供的盐酸小檗碱标准品的光谱剖面图为依据,设计了高通滤波器得到了检品的特征光谱数据.对八种不同来源的市售黄柏饮片特征光谱,以及黄柏与其同科植物黄皮特征光谱的比较显示,使用本方法对中药进行定性、定量的检测,样品无需特殊处理,可在原生态的情况下进行;检测过程无损、实时;检测结果指纹特征明显.     

先位粉末套管法制备MgB2/Fe线材的超导性能研究

采用先位法将MgB2粉装入纯铁管中,制备出MgB2/Fe超导线材.用X射线衍射仪和扫描电子显微镜分析了样品的物相组成和显微结构;用SQUID测量了样品的超导转变温度;用标准四引线法测量了短样的临界电流.结果显示,超导样品的临界转变温度约为38.3 K,在4.2 K/4 T下MgB2/Fe线材的临界电流密度为～104A/cm2.研究结果表明,高温退火有效地减少了冷加工过程中产生的应力,改善了晶粒连接性,提高了芯材的致密度,可以显著地提高先位法制备线材的临界电流密度.     

平行共轴线圈的磁场特征研究与实验设计

通过计算机及相关的传感器和数据采集接口辅助,研究了平行共轴双线圈间距分别为0.5R,R,1.5R时,轴线方向磁场强度的分布规律及特征.从平行共轴双线圈间距为R的亥姆霍兹线圈所形成的均匀磁场出发,结合理论推导,自己设计并组装了三线圈实验装置,实现了平行共轴三线圈均匀磁场区域扩大、强度增强的实验设计,在一定程度上弥补了传统亥姆霍兹线圈磁场测量的不足并有助于对其深入的理解和研究.     

Measurement of Gamma-Rays from 11ΛB and 12ΛC

From the ^12 C（π^＋,K^＋）^12 AC reaction the γ -rays of 261.6±0.24 ke V（7/2^＋ →5/2^＋）and 1481.7±0.7 ke V（1/2^＋ →5/2^＋） of ^11 A B,and 2667.3±2.8 keV（1^- 2 → 2^- 1）of ^12 A C hypernuclei have been identified using a large germanium detector array Hyperball2 at K6 beam line of KEK. The observed energies of the transitions 1481.7keV and 261.6 keV are significantly different from the values predicted by the shell model using the △ and SN parameters determined from the ^7 △ Li data.     

Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account, conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of oxide positive charges and the recovery of interface states under the `low' state of p-channel metal oxide semiconductor field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.     

Dopant diffusion and surface morphology of vanadium implanted 4H-silicon carbide

The diffusion behaviours of vanadium implanted p- and n-type 4H-SiC are investigated by using the secondary ion mass spectrometry (SIMS). Significant redistribution, especially out-diffusion of vanadium towards the sample surface is not observed after 1650℃ annealing for both p- and n-type samples. Atomic force microscopy (AFM) is applied to the characterization of surface morphology, indicating the formation of continuous long furrows running in one direction across the wafer surface after 1650℃ annealing. The surface roughness results from the evaporation and re-deposition of Si species on the surface during annealing. The chemical compositions of sample surface are investigated using x-ray photoelectron spectroscopy (XPS). The results of C 1s and Si 2p core-level spectra are presented in detail to demonstrate the evaporation of Si from the wafer and the deposition of SiO₂ on the sample surface during annealing.