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61.
We present theoretical results of the electron impact ionization rate in GaAs/AlGaAs multiquantum well structures as a function of applied electric field for various geometries, i.e., well and barrier widths. In addition, we present preliminary measurements of the current-voltage characteristics of MBE grown devices which demonstrate very low leakage current as well as sharp breakdwon behavior. It is found that the net ionization rate, determined by averaging over the constitutent GaAs and AlGaAs layers, approaches the weighted average of the constituent bulk rates at high electric field strengths; the potential discontinuity is relatively unimportant. The electron ionization rate within the well regions alone is still higher than that in bulk GaAs, but is insufficiently enhanced to compensate for the much lower rate in the AlGaAs layers. As the field is lowered to 250.0 kV/cm, the average ionization rate in the multiquantum well structure becomes larger than in the bulk. 相似文献
62.
Precise measurement of magnetic moment of short-lived β-emitting nuclei12B ( I π=1+, T 1/2=20.18 ms)
Zhou Dongmei Zheng Yongnan Du Enpeng Xu Yongjun Zhu Jiazheng Yuan Daqing Wang Zhiqiang Luo Hailong Zuo Yi Ma Ruigang Duan Xiao M. Mihara M. Fukuda K. Matsuta T. Minamisono Zhu Shengyun 《中国科学G辑(英文版)》2004,47(5):531-539
The spin polarized β-emitting nuclei12B (I
π=1+,T
1/2=20.18 ms) were produced by the nuclear reaction11B(d, p)12B and by the selection technique of the incident deuteron energy and the12B recoil angle following the nuclear reaction. The nuclear magnetic moment of the short-lived nuclei12B was measured by β-NMR with the β-NMR and β-NQR setup established for the first time in China. The nuclear magnetic moment
of12B was determined to be μ=0.99993±0.00048 nm org=0.99993±0.00048 after the precise correction of the Knight shift. 相似文献
63.
Shu Fen Wang Wen Guo Zou Su Wen Liu Dong Xu Duo Rong Yuan Guang Jun Zhou 《Journal of Physics and Chemistry of Solids》2004,65(7):1243-1245
The photoluminescence properties of the Bi3+ in sol-gel derived ZnTiO3 nanocrystals have been investigated. An ultra-violet emission at 360 nm and a visible emission band at 506 nm have been observed, originating from two kinds of emission centers. The former is ascribed to the 3P1-1S0 transition of Bi3+ and the latter to the recombination of the electrons with the photo-generated holes trapped in the zinc vacancies. In all cases the latter contribution is predominant. 相似文献
64.
W.F. Wang 《Journal of Quantitative Spectroscopy & Radiative Transfer》2004,86(4):437-444
It is shown that by including the second term of Magnus expansion, improved convergence can be achieved for the non-perturbative pressure broadening formalism proposed by Neilson and Gordon (J. Chem. Phys. 58 (1973) 4131). The present method was applied to the line broadening calculations of CO in a bath of Ar. 相似文献
65.
A. Y. Miguelote N. A. Tomimura Anzhong Wang 《General Relativity and Gravitation》2004,36(8):1883-1918
Perfect fluid with kinematic self-similarity is studied in 2+1 dimensional spacetimes with circular symmetry, and various exact solutions to the Einstein field equations are given. These include all the solutions of dust and stiff perfect fluid with self-similarity of the first kind, and all the solutions of perfect fluid with a linear equation of state and self-similarity of the zeroth and second kinds. It is found that some of these solutions represent gravitational collapse, and the final state of the collapse can be either a black hole or a null singularity. It is also shown that one solution can have two different kinds of kinematic self-similarity. 相似文献
66.
67.
Positron-lifetime experiments have been carried out on two undoped n-type liquid encapsulated Czochralski (LEC)-grown InP samples with different stoichiometric compositions in the temperature range 10-300 K. For temperatures below 120 K for P-rich InP and 100 K for In-rich InP, the positron average lifetime began to increase rapidly and then leveled off, which was associated with the charge state change of hydrogen indium vacancy complexes from (VInH4)+ to (VInH4)0. This phenomenon was more obvious in P-rich samples that have a higher concentration of VInH4. The transformation temperature of approximately 120 K suggests that the complex VInH4 is a donor defect and that the ionization energy is about 0.01 eV. The ionization of neutral VInH4 accounted for the decrease of the positron average lifetime when the sample was illuminated with a photon energy of 1.32 eV at 70 K. These results provide evidence for hydrogen complex defects in undoped LEC InP. 相似文献
68.
J. Wang J. Kono A. Oiwa H. Munekata C. J. Stanton 《Superlattices and Microstructures》2003,34(3-6):563
We have carried out an ultrafast time-resolved differential reflectivity study of a ferromagnetic semiconductor InGaMnAs and made a systematic comparison with low-temperature grown and high-temperature grown InGaAs reference films. Very short carrier lifetimes (2 ps) were observed in InGaMnAs and the low-temperature grown InGaAs film, but not in the high-temperature grown InGaAs film. We attribute the short lifetimes to carrier trapping by mid-gap states introduced during low-temperature MBE growth. Furthermore, at long times, we observed periodic oscillations in the differential reflectivity signal with period 20 ps, which we interpret as coherent acoustic phonons. 相似文献
69.
本文利用比较原理以及一种特殊变换研究了一类非线性退化方程的混合问题,得到了这类复杂问题解的渐进性质。 相似文献
70.
Nonlinear susceptibility of a quantum dot (QD) embedded in a two-sided cavity, is studied theoretically from a weak-coupling to a strong-coupling regime. In the relevance of a quantum logic gate, the corresponding nonlinear phase shifts (Kerr effect) are estimated for coherent wavepackets including one photon on average. In the weak-coupling regime, the phase shift enhances strongly as a function of a coupling constant between the cavity photon and QD, and eventually saturates in the strong-coupling regime. We also show transmission spectra to evaluate the efficiency of the phase shift. Although the efficiency decreases monotonically in the weak-coupling regime, it rises in the strong-coupling regime. 相似文献