An Improved Upper Bound on the Linear 2-arboricity of 1-planar Graphs

The linear 2-arboricity la_2(G) of a graph G is the least integer k such that G can be partitioned into k edge-disjoint forests,whose component trees are paths of length at most 2.In this paper,we prove that if G is a 1-planar graph with maximum degree Δ,then la_2(G)≤[(Δ+1)/2]+7.This improves a known result of Liu et al.(2019) that every 1-planar graph G has la_2(G)≤[(Δ+1)/2]+14.We also observe that there exists a 7-regular 1-planar graph G such that la_2(G)=6=[(Δ+1)/2]+2,which implies that our solution is within 6 from optimal.     

Steady vortex patches near a nontrivial irrotational flow

In this paper, we study the vortex patch problem in an ideal fluid in a planar bounded domain. By solving a certain minimization problem and studying the limiting behavior of the minimizer, we prove that for any harmonic function q corresponding to a nontrivial irrotational flow, there exists a family of steady vortex patches approaching the set of extreme points of q on the boundary of the domain. Furthermore, we show that each finite collection of strict extreme points of q corresponds to a family of steady multiple vortex patches approaching it.     

靶向新药吉非替尼的核磁共振波谱研究

应用1D、2D NMR实验技术（¹H NMR、¹³C NMR、DEPT、¹H-¹H COSY、¹H-¹³C HMQC、¹H-¹³C HMBC等）研究了靶向新药吉非替尼的结构,对其1H NMR和¹³C NMR谱峰作了全归属,并讨论了F原子对吉非替尼的¹H、¹³C NMR的影响.     

Modeling Fraunhofer diffractive characteristics for modulation transfer function analysis of tilted ring metallic mesh

In order to analyze the Fraunhofer diffractive characteristics and modulation transfer function (MTF) of a tilted ring metallic mesh, an optical intensity distribution model of Fraunhofer diffraction is built using Huygens–Fresnel diffraction theory and the diffraction integral is carried out directly in the tilted mesh plane. The diffraction characteristics of the tilted ring metallic mesh are in good agreement with experimental results, which proves the correctness of the model established. MTF of an optical system with metallic mesh is calculated based on the model established and Fourier transform. Analysis shows that the degradation of MTF caused by diffraction of a ring mesh is much less than that of a square mesh whether they are vertical or tilted to the optical axis. Therefore, ring mesh can provide higher imaging quality than square mesh when they are used as high-pass filters in optical windows. A tilted array diffraction modulating factor is abstracted and believed useful in the analysis of diffractive characteristics of tilted square mesh and ring mesh, and it can be extended to Fraunhofer diffractive characteristics analysis of other tilted diffraction arrays.     

稀掺杂GaNxAs1－x(x≤0.03)薄膜的调制光谱研究

利用室温下压电调制反射光(PzR)谱技术系统测量了N掺杂浓度为0.0%—3%的分子束外延生长GaN_xAs_1-x薄膜，并对图谱中所观察的光学跃迁进行了指认.在GaN_0.005As_0.995和GaN_0.01As_0.99薄膜的PzR谱中观察到此前只在椭圆偏振谱中才看到的N掺杂相关能态E₁+Δ₁+Δ_N.当N掺杂浓度达到 关键词： 压电调制反射光谱(PzR) xAs_1-x薄膜')" href="#">GaN_xAs_1-x薄膜 分子束外延(MBE)     

多源共蒸发制备高性能REBa2Cu3O7-x涂层导体的进展与展望

REBa2Cu3O7-x (RE：钇、钆等稀土元素,REBCO）高温超导体因其具备较高的不可逆场和上临界场等优越性能,一经发现就备受关注。但由于材料本身固有的陶瓷性及弱连接等属性,导致其实际应用起来难度较大。目前,人们已经发展了诸多制备工艺来克服这些困难,实现了REBCO超导体的实际应用。按照前驱膜沉积方法可将REBCO超导薄膜的制备分为物理法和化学法。本文综述了物理气相沉积（PVD-Physical Vapor Deposition）法中多源共蒸发法制备REBCO超导薄膜的技术起源及演变历程,并与金属有机沉积、金属有机化学气相沉积、脉冲激光沉积等不同方法生产的REBCO超导带材进行对比,突出多源共蒸发法制备的REBCO薄膜性能优异、在商业化生产效率上具有更大的优势。最后对多源共蒸发法制备REBCO超导薄膜进行总结及展望,解决多源共蒸发沉积制备REBCO薄膜的成相机理、提高薄膜的钉扎中心等问题对未来第二代高温超导带材的大规模应用具有重要意义。     

Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.     

矿尘影响下生态系统脆弱性级联传播模型分析

为了解决矿尘连续排放并迁移对地表生态系统造成的脆弱性问题,提出了基于函数地理Petri网的脆弱性级联传播模型。综合考虑污染物迁移方向和生态环境在地理空间上的关联关系,直观地构造了基于级联传播的污染Petri网。在此基础上,定义了基于VCPM的脆弱度和阈值的概念,利用两者的关系进行脆弱性级联传播分析,从而明确级联传播的三种状态。最后,以神府煤田矿尘迁移作为污染物连续排放的污染源,通过模型方法的模拟仿真分析,对生态环境系统在级联传播下的脆弱性进行了深入探讨。已有的研究方法和结果不仅在生态环境脆弱性研究领域做出了新的贡献,而且为环境的修复和重建提供了参考价值。     

Three-dimensional subwavelength imaging by a photonic-crystal flat lens using negative refraction at microwave frequencies

We experimentally demonstrate subwavelength resolution imaging at microwave frequencies by a three-dimensional (3D) photonic-crystal flat lens using full 3D negative refraction. The photonic crystal was fabricated in a layer-by-layer process. A subwavelength pinhole source and a dipole detector were employed for the measurement. By point-by-point scanning, we obtained the image of the pinhole source shown in both amplitude and phase, which demonstrated the imaging mechanism and subwavelength feature size in all three dimensions. An image of two pinhole sources with subwavelength spacing showed two resolved spots, which further verified subwavelength resolution.     

Electronic structures,magnetic properties and band alignments of 3d transition metal atoms doped monolayer MoS2

Utilizing first-principles calculations, the electronic structures, magnetic properties and band alignments of monolayer MoS₂ doped by 3d transition metal atoms have been investigated. It is found that in V, Cr, Mn, Fe-doped monolayers, the nearest neighboring S atoms (S_NN) are antiferromagnetically polarized with the doped atoms. While in Co, Ni, Cu, Zn-doped systems, the S_NN are ferromagnetically coupled with the doped atoms. Moreover, the nearest neighboring Mo atoms also demonstrate spin polarization. Compared with pristine monolayer MoS₂, little change is found for the band edges' positions in the doped systems. The Fermi level is located in the spin-polarized impurity bands, implying a half-metallic state. These results provide fundamental insights for doped monolayer MoS₂ applying in spintronic, optoelectronic and electronic devices.