Effect of γ radiation from <Superscript>60</Superscript>Co on the formation of metal contacts to GaAs (Al<Subscript>x</Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As) structures

The properties of nonrectifying AuGe/GaAs (Al_0.4Ga_0.6As) contacts exposed to heat treatment, ⁶⁰Co γ radiation, and γ radiation combined with the application of an electrical bias are studied. A correlation between the type of interfacial interaction in the contacts and their resistance is found. Results obtained are explained in terms of a diffusion model with a movable boundary of the metal layer.     

Effects of localization of the areas of sound scattering by surface wind waves

Experimental studies of the scattering of a monochromatic sound signal by a rough sea surface are carried out. The signal is produced by a point source in a shallow-water basin. The measurements are performed with the use of horizontal and vertical linear receiving arrays. The experimental data are compared with the estimates obtained on the basis of the model developed by the authors for resonant sound scattering by surface roughness. A satisfactory agreement between the experiments and the calculations is achieved. It is shown that the scattered signal is formed within small surface areas, whose sizes have the same order of magnitude as the first Fresnel zone with respect to the source and the receiving system.     

The total acoustic impedance of a prolate spheroid performing transverse oscillatory movements

Using the theory of spheroidal wave functions, the total acoustic impedance is determined for a prolate spheroid performing transverse translational and rotational oscillatory movements. Expressions for the radiation resistance, the added mass, and the added moment of inertia are derived. It is shown that, in the lowfrequency approximation, this mass and moment of inertia reach limiting values identical to hydrodynamic ones. The components of the total acoustic impedance are calculated for spheroids of different relative thicknesses at an arbitrary frequency.     

Synthesis of ordered Ge-Si heterostructures containing ultrasmall germanium nanoclusters

Different techniques for the fabrication of structures containing ensembles of ultrasmall germanium nanoclusters distributed with a high density over the substrate surface are discussed. How to control the morphology and ordering of these ensembles is also discussed.     

Electromechanical properties of Pb<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> piezoelectric crystals grown from solution in a melt

Single crystals of lead gallium germanate Pb₃Ga₂Ge₄O₁₄ are grown from their own solution melts. The propagation of bulk acoustic waves is investigated, and the elastic, piezoelectric, and dielectric constants are calculated. The temperature dependences of the dielectric constants of this compound are analyzed.     

Microstructure and mechanical characteristics of nanodiamond-SiC compacts

Superhard nanodiamond-SiC ceramics are prepared by infiltrating liquid Si into porous nanodiamond compacts under pressure. Synthesized samples are 2.2 mm thick and 3–4 mm in diameter. The effect of particle size of dynamically synthesized nanodiamond powders on silicon infiltration and SiC phase formation is studied. It is established that silicon does not penetrate into the pores of nanodiamond powders if the original particle size is smaller than 0.5–1.0 μm. The critical pore size for infiltration is 100–200 nm. A study of the microstructure of the samples showed the presence of the nanometer-and submicron-scale SiC phase. The ultrasound velocities are measured in the prepared compacts, and the elastic moduli are calculated. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 4, 2004, pp. 734–736. Original Russian Text Copyright ? 2004 by Ekimov, Gromnitskaya, Mazalov, Pal’, Pichugin, Gierlotka, Palosz, Kozubowski.     

On the Nature of Radiation Resistance in Compensated Silicon

Russian Physics Journal -     

A Semiconductor Laser of the Visible Range as an Exciting Source of Raman Scattering

A possibility of application of semiconductor lasers of the visible range as exciting sources for Raman spectroscopy is studied. An experimental set-up for measuring Raman spectra of polycrystalline dielectrics and broad-gap semiconductors excited by a semiconductor laser with a wavelength of 640 nm was created. The conditions under which the spectral width of the lasing line of a semiconductor laser was within 10^-3 cm^-1 in the continuous mode with a power of 10 mW are realized. The characteristics of various types of exciting sources used in Raman spectroscopy are compared. The results of studies of the characteristic Raman spectra excited with a semiconductor laser in polycrystalline sulfur are presented.     

The effect of electrical boundary conditions on the characteristics of surface acoustic waves propagating in potassium niobate

The study of the effect of a perfectly conducting plane placed at a certain distance from the surface of a potassium niobate crystal on the characteristics of the generalized Rayleigh and Gulyaev-Bleustein surface waves is continued. In addition, the effect of an infinitely thin conducting layer applied to the surface of the piezoelectric on the characteristics of these waves is analyzed. It is found that a variation in the conductance of this layer can produce a result that completely differs from the result obtained when a perfectly conducting plane is moved toward the surface, although the extreme states of these actions (electrically open and short-circuited surfaces) are identical. A possible physical explanation of this difference is proposed.