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991.
992.
In this paper the performances of inhomogeneous dielectric slabs as solar light collectors for both illumination and solar energy applications are analysed. 相似文献
993.
R. Salomon 《Zeitschrift für Physik B Condensed Matter》1989,73(4):519-527
The diffusion constant and the diagonal conductivity for non-interacting electrons in a two-dimensional, disordered system are studied. A homogeneous magnetic field perpendicular to the electron system is assumed. For weak short-range random potentials and high fields the Landau quantum numbern can be used as expansion parameter. In the limit of high Landau levels the system shows metallic behaviour. Corrections for finiten decrease the conductivity and indicate localized states in the whole energy band. A breakdown of the expansion and stronger localization are observed only for the lowest Landau levels if the typical experimental length scale of the quantized Hall effect is used. 相似文献
994.
U. Kunze 《Zeitschrift für Physik B Condensed Matter》1989,76(4):463-472
Metal/insulator/semiconductor junctions are prepared on degeneratep-type InAs substrates with hole concentrations ranging from 2.3×1017 cm–3 to 2.7×1018 cm–3. The low work function of the top metal Yb, Al, or Au and charged interface states influence a two-dimensional (2D) electron inversion layer at the InAs surface. The insulator barrier that is formed by thermal oxidation is designed sufficiently thin, so that the bias voltage applied at the metal electrode mainly drops across the depletion layer separating the electron channel from the bulk. The current-voltage (I–V) characteristics exhibit strong negative differential conductance due to interband, tunneling from the 2D subband into the 3D valence band with peak-to-valley current ratios up to 3.1, 18, and 32 at 300 K, 77 K, and 4.2 K, respectively. In agreement with a theoretical model based on coherentelastic tunneling, the form of the I–V curves resembles those of double-barrier resonant tunnel devices rather than those of 3D Esaki diodes. The series resistance is obtained from the saturation of the differential conductance dI/dV at high forward bias and from the shift of structures in d2
I/dV
2 arising from phonon assisted tunneling.Dedicated to G. Lautz on the occasion of his 65th birthday 相似文献
995.
Calculations are performed, using a basis of two-center functions described previously, for excited states of the following three-and four-electron compounds: H2
–, He2
+, He2, Li2
+2. High efficiency is demonstrated for the frozen ionic core approximation and the nonorthogonal orbital method in such calculations. For four-electron systems the practical feasibility of the frozen hybrid core approximation is demonstrated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 53–56, August, 1987. 相似文献
996.
Compact, time‐harmonic, acoustic sources produce waves that decay too slowly to be square‐integrable on a line away from the sources. We introduce an inner product, arising directly from Green's second theorem, to form a Hilbert space of these waves and present examples of its computation.1 © 2005 Wiley Periodicals, Inc. 相似文献
997.
We present here a methodology for searching a robust pore size distribution (PSD) for adsorbent materials. The method is based on a combination of individual adsorption isotherms, obtained from Grand Canonical Monte Carlo simulations, a regularization procedure to invert the adsorption integral equation (Tikhonov regularization solved by singular value decomposition), and the needed experimental adsorption isotherm. The selection of several parameters from the available choices to start the procedure are discussed here: the size of the kernel (number of individual pores and number of experimental adsorption points to be included), the fulfillment of the Discrete Picard condition, and the L-curve criteria, all leading to find a reliable and robust PSD. The procedure is applied to plugged hexagonal templated silicas (PHTS), synthesized, and characterized in our laboratory. 相似文献
998.
Molecular electroactive monolayers have been produced from vinylferrocene (VFC) via light-assisted surface anchoring to H-terminated n- and p-Si(1 0 0) wafers prepared via wet chemistry, in a controlled atmosphere. The resulting Si-C bound hybrids have been characterized by means of XPS and AFM. Their performance as semiconductor functionalized electrodes and their surface composition have been followed by combining electrochemical and XPS measurements on the same samples, before and after use in an electrochemical cell. White-light photoactivated anchoring at short (1 h) exposure times has resulted in a mild route, with a very limited impact on the initial quality of the silicon substrate. In fact, the functionalized Si surface results negligibly oxidized, and the C/Fe atomic ratio is close to the value expected for the pure molecular species. The VFC/Si hybrids can be described as (η5-C5H5)Fe2+(η5-C5H4)-CH2-CH2-Si species, on the basis of XPS results. Electrochemical methods have been applied in order to investigate the role played by a robust, covalent Si-C anchoring mode towards substrate-molecule electronic communication, a crucial issue for a perspective development of molecular electronics devices. The response found from cyclic voltammograms for p-Si(1 0 0) functionalized electrodes, run in the dark and under illumination, has shown that the electron transfer is not limited by the number of charge carriers, confirming the occurrence of electron transfer via the Si valence band. The hybrids have shown a noticeable electrochemical stability and reversibility under cyclic voltammetry (cv), and the trend in peak current intensity vs. the scan rate was linear. The molecule-Si bond is preserved even after thousands of voltammetric cycles, although the surface coverage, evaluated from cv and XPS, decreases in the same sequence. An increasingly larger surface concentration of Fe3+ at the expenses of Fe2+ redox centers has been found at increasing number of cv’s, experimentally associated with the growth of silicon oxide. Surface SiO− groups from deprotonated silanol termination, induced by the electrochemical treatments, are proposed as the associated counterions for the Fe3+ species. They could be responsible for the observed decrease in the electron transfer rate constant with electrode ageing. 相似文献
999.
O. Fülöp 《Discrete Mathematics》2005,294(3):285-290
We give a short proof for the Mixed Connectivity Certificate Theorem of Even, Itkis and Rajsbaum and provide an upper bound on the edge number of a certificate of local T-mixed connectivity up to k. 相似文献
1000.
R. Chitra Pascal Roussel R. R. Choudhury 《Acta Crystallographica. Section C, Structural Chemistry》2006,62(9):o547-o549
The title complex, 2CH4N2S·C4H6O4, is a host–guest system. The asymmetric unit consists of one complete thiourea molecule and one‐half of a dimethyl oxalate molecule lying on an inversion centre. The host thiourea molecules are connected to form zigzag chains by N—H⋯S hydrogen bonds. The guest dimethyl oxalate molecules provide O‐atom acceptors for N—H⋯O hydrogen bonds, thus interconnecting the chains of thiourea molecules to form completely connected sheets. The reduction in temperature from 300 to 100 K leaves the structure unchanged and still isostructural with that previously determined for the analogous thiourea–diethyl oxalate (2/1) complex. It does, however, induce closer packing of the molecules, general shrinkage of the unit cell and shortening of the hydrogen bonds, these last two to the extent of 1–2%. 相似文献