一种双模压缩微波制备的相位锁定方案

相位锁定是双模压缩微波制备的关键问题之一.针对基于超导180°混合环的制备方案相位稳定度不高且信息处理复杂等问题,提出一种相位锁定方案.对约瑟夫森参量放大器的信号输入进行相位调制,输出的单模压缩微波与另一未调制的同频单模压缩微波在超导180°混合环内干涉,实现双模压缩微波的制备与路径分离.将未调制的单模压缩微波与一路双模压缩微波混频,解调出相位调制信号可得到两路单模压缩微波的相对相位及误差,将相位误差反馈于约瑟夫森参量放大器的抽运实现相对相位的锁定,获得稳定的双模压缩输出.本研究对高性能纠缠微波源的设计提供了理论参考.     

钴掺杂MoSe2共生长中氢气的作用分析及磁电特性研究

采用原位共生长化学气相沉积法,以Co3O4、MoO3、Se粉末为前驱物,710℃下在SiO2衬底上生长掺钴MoSe2纳米薄片,分析讨论氢气含量对其生长及调节机理的影响.表面形貌分析表明,氢气的引入促进了成核所需的氧硒金属化合物以及横向生长中需要的CoMoSe化合物分子的生成;AFM(Atomic Force Microscope)结果表明氢气有利于生长单层二维超薄掺钴MoSe2.随着Co3O4前驱物用量的增加,样品的拉曼和PL(Photoluminescence)谱图分别表现出红移和蓝移现象,带隙实现从1.52—1.57 eV的调制.XPS(X-ray photoelectron spectroscopy)结果分析得到Co的元素组分比为4.4%.通过SQUID-VSM(Superconducting QUantum Interference Device)和器件电学测试分析了样品的磁电特性,结果表明Co掺入后MoSe2由抗磁性变为软磁性;背栅FETs器件的阈值电压比纯MoSe2向正向偏移5 V且关态电流更低;为超薄二维材料磁电特性研究及应用拓展提供了基础探索.     

气力提升系统气液两相流数值模拟分析

污水处理、油田采油、液态金属冷却反应堆和磁流体动力转换器等领域采用气力提升系统有其显著优势.由于不同液体介质与气体介质密度对气力提升系统性能影响较大,因此本文基于Fluent仿真软件,采用欧拉模型、k-ω剪切应力输运湍流模型数值模拟了氮气-水、氮气-煤油、氮气-水银及空气-水、氩气-水、氮气-水下气力提升系统内气液两相流动行为,分析了系统稳定时提升立管内气相体积分数、提升液体流量、提升效率、提升管出口处液体径向速度的变化规律.研究结果表明:1)氮气-水、氮气-煤油、氮气-水银系统中,提升管内液体介质密度越大,提升管内气相体积分数越小、提升液体流量越大、提升效率越高;2)空气-水、氩气-水、氮气-水系统中,提升管内气体介质密度越大,提升管内气相体积分数越小、提升液体流量越大、提升效率峰值越小;3)提升管出口处提升液体径向速度随气体充入量的不断增加而整体波动升高,最终管轴中心附近液体速度较大,管壁附近液体速度较小.本文研究成果为污水处理、气举采油、液态重金属冷却核反应堆和磁流体动力转换器等应用领域的气力提升技术的优化提供科学的理论基础.     

基于非线性光纤环形镜的少模脉冲幅度调制再生器

随着网络带宽需求的快速增加,波分复用系统的容量已接近非线性香农极限.为了适应未来网络的发展,空分复用技术引起了越来越多的关注.本文首次提出基于少模非线性光纤环形镜(FM-NOLM)的脉冲幅度调制(PAM)全光再生器,描述了其工作原理和具体设计过程.采用COMSOL软件对组成FM-NOLM的硫化物高非线性光纤进行了模式特性仿真.以LP01,LP11,LP21三个光纤模式为例,确定了再生器的参数,计算出每个模式的功率转移函数曲线.仿真分析了该少模PAM-4全光再生器的噪声抑制(NRR)性能,并与单模情形进行了比较.研究表明,1)对于每个空间模式的PAM信号,所有再生电平具有一致的功率转移性能;2)当输入信噪比(SNR)约大于20 dB时,三种模式的噪声抑制比均可超过3 dB,并随着输入信噪比线性增加,其斜率约为1.2;3)在相同输入SNR条件下,三种模式的噪声抑制比相差不大,不超过1.1 dB.为了说明再生器的再生性能,当输入SNR为25 dB时,我们还给出了再生前后PAM-4信号的功率分布直方图.与现有的再生方案相比,本文方案的均匀多电平再生转移性能,使其更适合高频谱效率的长距空分复用系统和任意电平数的PAM信号再生.此外,该方案也能够扩展到波长域,有效提高光通信系统的传输容量.     

三级行波热声发动机的声场特性

设计并搭建了一台三级行波热声发动机,并基于线性热声理论和实验研究分析了该热声发动机的声场特性。结果表明:理论计算中各级加热功率相同时,发动机声场对称;而实验中加热功率相同时声场存在不一致性,需要输入特定的加热功率来控制三级加热温度基本相同,从而保证三级声场基本对称,此时相邻两级对应位置的压力相位差在120°±10°范围内;随着充气压力和加热温度的升高,系统工作频率略有升高,变化不显著,系统压力振幅和压比则增大明显。以氮气和氦气为工质时,工作频率分别在20 Hz和55 Hz左右;实验中压比分别达到了1.28和1.18。     

Astrocyte and ions metabolism during epileptogenesis:A review for modeling studies

As a large group of cells in a central nervous system, astrocytes have a great influence on ion and energy metabolism in a nervous system. Disorders of neuronal ion and energy metabolism caused by impaired astrocytes play a key role in the pathogenesis of epilepsy. This paper reviews the existing computational models of epileptogenesis resulting from impaired astrocytes and presents several open perspectives with regard to ion and energy metabolism-induced epileptogenesis in a neuron-astrocyte-capillary coupled model.     

Design of diamond-shape photonic crystal fiber polarization filter based on surface plasma resonance effect

A novel plasmonic polarization filter based on the diamond-shape photonic crystal fiber(PCF) is proposed. The resonant coupling characteristics of the PCF polarization filter are investigated by the full-vector finite-element method. By optimizing the geometric parameters of the PCF, when the fiber length is 5 mm, the polarization filter has a bandwidth of 990 nm and an extinction ratio(ER) of lower than -20 dB. Moreover, a single wavelength polarization filter can also be achieved, along with an ER of -279.78 dB at wavelength 1.55 μm. It is believed that the proposed PCF polarization filter will be very useful in laser and optical communication systems.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

In-situ SiN combined with etch-stop barrier structure for high-frequency AlGaN/GaN HEMT

The etch-stop structure including the in-situ SiN and AlGaN/GaN barrier is proposed for high frequency applications.The etch-stop process is realized by placing an in-situ SiN layer on the top of the thin AlGaN barrier.F-based etching can be self-terminated after removing SiN,leaving the AlGaN barrier in the gate region.With this in-situ SiN and thin barrier etch-stop structure,the short channel effect can be suppressed,meanwhile achieving highly precisely controlled and low damage etching process.The device shows a maximum drain current of 1022 mA/mm,a peak transconductance of 459 mS/mm,and a maximum oscillation frequency(fmax)of 248 GHz.     

喷流冷却复合陶瓷薄片激光器的热特性仿真分析及实验研究

为分析喷流冷却复合陶瓷薄片激光器的热特性,设计用于冷却复合陶瓷薄片的喷流冷却系统.利用湍流换热理论和计算流体动力学仿真方法建立喷流冷却复合陶瓷薄片激光器的流固耦合热仿真模型,定义评价其冷却能力和冷却均匀性的定量参数.根据该仿真模型得到喷流冷却系统的最优设计参数,并进行实验验证.使用163孔喷板,流量为0.2kg/s,入口温度为20℃,在1200 W泵浦时获得359 W激光输出功率,并测得复合陶瓷薄片上表面的最高温度为92℃.激光输出功率与复合陶瓷薄片上表面温度均与泵浦功率呈近似正线性关系,且温度的实验值与仿真值相符度较高.