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991.
Yu. V. Kaletina V. M. Schastlivtsev E. A. Fokina 《Bulletin of the Russian Academy of Sciences: Physics》2007,71(12):1667-1673
The effect of magnetic treatment on the isothermal martensitic transformation in the Fe-24% Ni-4% Mn alloy has been investigated. The martensitic transformation in a dc magnetic field at liquid-helium temperature has been analyzed. 相似文献
992.
V. I. Zubkov I. S. Shulgunova A. V. Solomonov M. Geller A. Marent D. Bimberg A. E. Zhukov E. S. Semenova V. M. Ustinov 《Bulletin of the Russian Academy of Sciences: Physics》2007,71(1):106-108
In this work, charge-carrier capture by an array of self-assembled InAs/GaAs quantum dots was directly observed for the first time by capacitance recharge. It is proposed to process the obtained transient-capture data by a similar method to that used for emission, by the box-car method. The capture activation energies are determined and compared with the emission activation energies. 相似文献
993.
L. A. Bityutskaya V. V. Distler V. V. Kryachko M. A. Yudovskaya M. V. Grechkina E. V. Bogatikov 《Physics of the Solid State》2007,49(7):1382-1386
Nanostructuring of natural isoferroplatinum crystals is revealed by atomic-force microscopy for the first time. Typical scales of ~30, 50, and 100 nm are determined and the self-affine character of their relation is established using a wavelet analysis. 相似文献
994.
D. Sasireka E. Palaniyandi K. Iyakutti 《International journal of quantum chemistry》2004,99(3):142-152
Local lattice relaxation of substitutional donors in silicon investigated using self‐consistent multiple scattering Xα (MSXα) method within the framework of the standard muffin‐tin potential approximation is extended to substitutional donors in germanium and substitutional acceptors in both silicon and germanium. Incorporating the effect of lattice relaxation surrounding the impurity makes the model suitable for both shallow and deep levels. Chemical trends of some aspects of impurity states, such as local lattice relaxation and charge transfer, of the impurities both in silicon and germanium are inferred. © 2004 Wiley Periodicals, Inc. Int J Quantum Chem, 2004 相似文献
995.
Ph. Komninou Th. Kehagias A. Delimitis G.P. Dimitrakopulos J. Kioseoglou E. Dimakis A. Georgakilas Th. Karakostas 《Superlattices and Microstructures》2004,36(4-6):509
The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al2O3(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 109–1010 cm−2. The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al2O3 as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved. 相似文献
996.
Sanzhizhapov D. B. Tonevitskii Yu. V. Mognonov D. M. Doroshenko Yu. E. 《Russian Journal of Applied Chemistry》2003,76(4):619-622
New polyimidates were prepared from bisphenols and mono- and dicarboxylic acid imidoyl chlorides. The structures of the polymers were determined, and their physicochemical, chemical, and thermal properties were studied. The possibility of preparing film and compression materials with good mechanical characteristics from these polymers was examined. 相似文献
997.
A. V. Savin E. I. Sokolov V. S. Favorskii I. V. Shatalov 《Journal of Applied Mechanics and Technical Physics》1991,32(6):893-897
Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, No. 6, pp. 78–83, November–December, 1991. 相似文献
998.
E. B. Postnikov 《Journal of Experimental and Theoretical Physics》2007,105(3):652-654
It is shown that time-scale synchronization of chaotic systems with ill-defined conventional phase is achieved by using wavelet transforms with center frequencies above a certain threshold value. It is found that the possibility of synchronization detection by introducing a wavelet phase is related to diffusion averaging of the analyzed signals. 相似文献
999.
E. de A. Gonçalves V. M. de Oliveira A. Rosas P. R.A. Campos 《The European Physical Journal B - Condensed Matter and Complex Systems》2007,59(1):127-132
Adaptation of populations takes place with the occurrence and subsequent fixation of mutations that confer some selective
advantage
to the individuals which acquire it. For this reason, the study of the process of fixation of advantageous mutations has a
long history
in the population genetics literature. Particularly, the previous investigations aimed to find out the main evolutionary forces
affecting the strength of natural selection in the populations.
In the current work, we investigate the dynamics of fixation of beneficial mutations in a subdivided population. The subpopulations
(demes)
can exchange migrants
among their neighbors, in a migration network which is assumed to have either a random graph or a scale-free topology. We
have observed that the migration rate
drastically affects the dynamics of mutation fixation, despite of the fact that the probability of fixation is invariant on
the
migration rate, accordingly to
Maruyama's conjecture. In addition, we have noticed a topological dependence of the adaptive evolution of the population when
clonal interference
becomes effective. 相似文献
1000.