Underbody and ground effects on rotating disc flow: a global scale inviscid study

The flow induced by a finite disc rotating near horizontal ground is considered, including the effects of an underbody. This paper concentrates on determining the shape of the free layer beyond the rim of the disc which is horizontal in the absence of the underbody and ground but forced to deform to ensure that conditions across the layer are satisfied when the underbody or ground is added. The far-field behaviour, the inviscid flow produced by a nominally infinite disc near the ground and the global solution for small ground clearances are considered analytically, and the full problem is posed as an integral problem. This is then solved numerically and analytically. Results are presented for various heights of the disc above the ground and for discs with an axisymmetric underbody present. A universal form is found for the farfield shape (which is controlled by entrainment into the free layer) but both the underbody and the ground effects are found to increase very significantly for reduced clearances.     

Chemical Reactivity of Tetrasulfur Tetranitride: Synthesis,Physical Properties,and Structural Characterization of the Amorphous Phase Cu7S4N4

Tetrasulfur tetranitride, S₄N₄, reacts with elemental Cu within inert solvents to a black‐blue material of approximate composition Cu₇S₄N₄ which is totally amorphous to X‐rays and which cannot be made crystalline by either thermal treatment or electron radiation. Cu₇S₄N₄ explodes if heated above 234 °C or when subjected to mechanical shock to eventually yield copper(I) sulfide; this together with the characteristic infrared spectrum of Cu₇S₄N₄ indicates the presence of molecular S₄N₄ units inside the amorphous phase. The metastable nature of Cu₇S₄N₄ is also mirrored by electron microscopy which furthermore allows the structural characterization of its degradation products. Based on experimental EXAFS data offering characteristic Cu—N and Cu—S distances, a theoretical crystalline approximant of Cu₇S₄N₄ was suggested and structurally optimized by density‐functional total‐energy calculations including periodic boundary conditions. This model incorporates a central S₄N₄ unit bonded to three shells of Cu atoms of different functionalities; in addition, a partial rupture of the S₄N₄ unit is likely to allow for a lowering of the total energy of the metastable phase. The latter observation supports the impossibility to make Cu₇S₄N₄ crystallize using ₄N₄ crystallize using whatever kind of measures.     

Aerodynamics of ski jumping: experiments and CFD simulations

The aerodynamic behaviour of a model ski jumper is investigated experimentally at full-scale Reynolds numbers and computationally applying a standard RANS code. In particular we focus on the influence of different postures on aerodynamic forces in a wide range of angles of attack. The experimental results proved to be in good agreement with full-scale measurements with athletes in much larger wind tunnels, and form a reliable basis for further predictions of the effects of position changes on the performance. The comparison of CFD results with the experiments shows poor agreement, but enables a clear outline of simulation potentials and limits when accurate predictions of effects from small variations are required.     

Effect of crystallochemical parameters of a piezophase on piezoelectric and pyroelectric properties of a polymer-piezoceramic composite

The piezoelectric and pyroelectric properties of the composites based on HDPE and lead-zirconate-titanate piezoceramics are shown to depend on the crystallochemical parameters of the piezophase. As the electroconductivity of cations and covalence of the B″″-O bonds decrease owing to enhanced adsorption interactions between polymer phases and the piezoceramic, the concentration of charge localization sites increases and the mobility of polymer chains at the interface decreases. As a result, piezoelectric and pyroelectric coefficients tend to increase.     

Measurements of total and positronium-formation cross sections for the scattering of positrons by alkali atoms

We present a review of our recent measurements of total cross sections (Q _T's) for the scattering of positrons by Na, K, and Rb, and positronium-formation cross sections (Q _Ps's) for Na and K. For our total cross section measurements, a beam transmission technique has been used. For ourQ _Ps measurements, our approach involves setting upper and lower limits onQ _Ps using a combination of (1) measuring the transmission of the positron beam with the angular discrimination of the apparatus made as poor as possible, and (2) measuring the 511 keV annihilation gamma rays in coincidence produced by the decay of para-Ps formed in the scattering cell. Comparison with theoretical calculations shows that our measuredQ _T's andQ _Ps's for Na and K agree reasonably well with a close coupling approximation (CCA) calculation which takes into account the formation of Ps in then=1 andn=2 states. In the 3–10 eV energy range, this calculation predicts a peak in theQ _T's andQ _Ps's for K which also appears in our measurements. The absence of such a peak in our measuredQ _T's andQ _Ps's (preliminary) for Na in this energy range is also consistent with the same theory. Comparisons with five-state CCA calculations ofQ _T which do not take Ps-formation into account also show good agreement with our positron-Na, K, and RbQ _T measurements for energies above 20 eV, but show dramatic departures from our measurements below 10 eV for K and Rb.     

Muon spin resonance and repolarization in amorphous silicon monoxide (a-SiO)

Studies of the muonium fractions in the amorphous oxide a-SiO have been carried out by RF resonance at TRIUMF, Canada and LF repolarization techniques at RAL, U.K. The resonance measurements confirm the presence of the interstitial Mu centre in this intermediate oxide of silicon. Analysis of the data gathered at RAL, using a recently-developed fitting technique, reveals that the Mu^* state is present here as well, but with lower relative fractions than in a-Si. However, as in the latter material, but in contrast to c-Si, this bond-centre species appears to be stable up to room temperature.