新型长周期光纤光栅的横向负载特性及其偏振相关性研究

发现高频CO2激光脉冲写入的长周期光纤光栅谐振波长的横向负载特性具有较强的负载方向相关性,而损耗峰幅值的横向负载特性的方向相关性较弱.不同圆周方向的横向负载对谐振波长偏振相关性的影响差异较大,但对损耗峰幅值偏振相关性的影响差异较小.利用横向负载引起双折射进而导致光栅的光学主轴旋转的相关理论,合理解释了该长周期光纤光栅独特的横向负载特性及其偏振相关性.     

Contact angle hysteresis of liquid drops as means to measure adhesive energy of zein on solid substrates

Adhesion of zein to solid substrates has been studied using surface energy profiles as indices and by adhesion mapping using atomic force microscopy (AFM). Different plasticizers like glycerol and sorbitol have been used to form mixed films with zein and properties of these films are studied using surface energy profiles. Comparison of the results from the different mixed samples with those from the pure zein films showed that force mapping could identify areas rich in protein. The adhesion maps produced were deconvoluted from sample topography and contrasted with the data obtained from contact angle measurements. A comparison of the two methods shows that the extent of contact angle hysteresis is indicative of both hydrophobicity of the surface as well as the force of adhesion. Mechanical properties and microstructure of zein films prepared by casting from solutions and using Langmuir-Blodgett film technique have been investigated. Pure zein seemed brittle and exhibited an essentially linear relationship between stress and strain. Films with plasticizer were tougher than these films. In general, mixed films showed better mechanical properties than pure films and had higher ultimate tensile strength and increased per cent elongation. Further, the mixed films of zein showed a higher force of adhesion compared to the pure films.     

一种新型温度自补偿高灵敏度折射率计

基于高频CO2激光脉冲写入的新型超长周期光纤光栅(ULPFG),提出了一种可实现温度自补偿的新型高灵敏度折射率计。理论与实验表明,新型超长周期光纤光栅不同闪耀阶次谐振峰对外界折射率与温度变化的灵敏度各自不同,特别的是,该光栅存在对外界折变不敏感的谐振峰,测量中除了可以利用该峰实现温度同时测量外,还可以补偿另一个测量折变的谐振峰因温度变化带来的测量误差。该折射率计具有制作简单、成本低、强度好,灵敏度高等优点,当外界折射率在1.43~1.45范围内变化时,其折射率测量灵敏度可达每单位折射率240 nm,在实际工业应用中具有较大的潜在实用价值。     

Recent study of nanomaterials prepared by inert gas condensation using ultra high vacuum chamber

The ultra high vacuum chamber was developed in the Department of Nuclear Physics, University of Madras with the funding from DST, India. This UHV chamber is used to prepare nanocrystalline materials by inert gas condensation technique (IGCT). Nanocrystalline materials such as PbF₂, Mn²⁺-doped PbF₂, Sn-doped In₂O₃ (ITO), ZnO, Al₂O₃, Ag₂O, CdO, CuO, ZnSe:ZnO etc., were prepared by this technique and characterized. Results of some of these materials will be presented in this paper. In solid-state²⁰⁷Pb NMR on PbF₂ a separate signal due to the presence of grain boundary has been observed. The structural phase transition pressure during the phase transformation from the cubic phase to orthorhombic phase under high pressure shows an increase with the decrease in grain size. Presence of electronic centres in nanocrystalline PbF₂ is observed from Raman studies and the same has been confirmed by photoluminescence studies. Al₂O₃ was prepared and⁵⁶Fe ions were implanted. After implantation segregation of⁵⁶Fe ions was examined by SEM. The oxidation properties of ITO were studied by HRTEM. As against the expectation of oxide coating on individual nanograins of In-Sn alloy, ITO nanograins grew into faceted nanograins on heat treatment in air and O₂ atmosphere. The growth of ITO under O₂ atmosphere showed pentagon symmetry. The PMN was initially prepared by solid-state reaction. Further, this PMN relaxor material will be used to convert into nanocrystalline PMN by IGCT with sputtering and will be studied     

Standard Quantum Teleportation and Controlled Quantum Teleportation of an Arbitrary N-Qubit Information State

We explicitly present precise and simple protocols for standard quantum teleportation and controlled quantum teleportation of an arbitrary N-qubit information state and analyse the case of perfect teleportation using general quantum channels and measurement bases. We find condition on resource quantum channel and Bell states for achieving perfect quantum teleportation. We also find the unitary transformation required to be done by Bob for perfect quantum teleportation and discuss the connection with others related works. We also discuss how perfect controlled quantum teleportation demands a correct choice of the measurement basis of additional party.     

Single quantum dots for slow and fast light in a planar photonic crystal

We theoretically investigate slow and fast light propagation and pulse velocity control in a nanocavity containing a single quantum dot side-coupled to a planar-photonic-crystal waveguide. We demonstrate that low coupling strength (i.e., the weak coupling regime) between a cavity and a dot, under on-resonance condition, can lead to delays of about +90 ps for a pulse 1/e-width of 280 ps. The group delay dependence on the various coupling parameters suggests achievable delays of +300 ps and consequently very slow light speeds of around 5000 m/s in a 1.5 microm cavity-waveguide section. We also show that under off-resonant condition one can achieve significant pulse advancement of -60 ps.     

Luminescence and ESR Studies of CaS：Dy Phosphor

CaS phosphor activated with Dy ions is prepared by the solid-state diffusion method. The phosphor is characterized by x-ray powder diffraction, thermogravimetric analysis and photoiuminescence. Defect centres formed in CaS：Dy are studied using the technique of electron spin resonance. The thermoluminescence glow curve shows peaks at around 117℃ and 345℃. Irradiated CaS：Dy exhibits ESR lines due to defect centres. The thermal annealing behaviour of one of the defect centres appears to correlate with the TL peaks at 117℃ and 345℃. This centre is characterized by an isotropic g-value of 2.0035 and is assigned to an F^＋ centre.     

Highly efficient Cherenkov radiation generation in the irregular point of hollow-core photonic crystal fiber

Highly efficient Cherenkov radiation(CR) is generated by the soliton self-frequency shift(SSFS) in the irregular point of a hollow-core photonic crystal fiber(HC-PCF) in our laboratory.The impacts of pump power and wavelength on the CR are investigated,and the corresponding nonlinear processes are discussed.When the average power of the 120 fs pump pulse increases from 500 mW to 700 mW,the Raman soliton shifts from 2210 nm to 2360 nm,the output power of the CR increases by 2.3 times,the maximum output power ratio of the CR at 539 nm to that of the residual pump is calculated to be 24.32:1,the width of the output optical spectrum at the visible wavelength broadens from 35 nm to 62 nm,and the conversion efficiency η of the CR in the experiment can be above 32%.     

5 MeV Proton irradiation effects on 200 GHz silicon–germanium heterojunction bipolar transistors

The total dose effects of 5?MeV proton and Co-60 gamma irradiation in the dose range from 1 to 100?Mrad on advanced 200?GHz Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) are investigated. The SRIM simulation study was conducted to understand the energy loss of 5?MeV proton ions in SiGe HBT structure. Pre- and post-radiation DC figure of merits such as forward- and inverse-mode Gummel characteristics, excess base current, DC current gain and output characteristics were used to quantify the radiation tolerance of the devices. The results show that the proton creates a significant amount of damages in the surface and bulk of the transistor when compared with gamma irradiation. The SiGe HBTs shows robust ionizing radiation tolerance even up to a total dose of 100?Mrad for both radiations.     

Structural,dielectric and optical properties of sol–gel synthesized 0.55Ba(Zr0.2Ti0.8)O3–0.45(Ba0.7Ca0.3)TiO3 ceramic

Lead-free polycrystalline ceramic 0.55Ba(Zr_0.2Ti_0.8)O₃–0.45(Ba_0.7Ca_0.3)TiO₃ (0.55BZT–0.45BCT) was synthesized by sol–gel method and the dielectric, impedance and optical properties of this ceramic were studied. X-ray diffraction analysis revealed the formation of pure perovskite phase with the coexistence of tetragonal and rhombohedral structures. The high value of dielectric constant (~6,985) with low dielectric loss (~0.013) was obtained at room temperature. Bulk and grain boundary resistances were measured by impedance analysis, which revealed negative temperature coefficient of resistance behaviour in this ceramic. The estimated value of optical band gap was found to be ~3.16 eV, which is related to the presence of intermediate energy levels. Two emission bands one at ~365 nm (UV region) and another at ~465 nm (blue region) were observed in photoluminescence spectrum at room temperature.