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991.
ZnS films are deposited by pulsed laser deposition on porous silicon (PS) substrates formed by electrochemical anodization of p-type (100) silicon wafer. Scanning electron microscope images reveal that the surface of ZnS films is unsmoothed, and there are some cracks in the ZnS films due to the roughness of the PS surface. The x-ray diffraction patterns show that the ZnS films on PS surface are grown in preferring orientation along cubic phase β-ZnS (111) direction. White light emission is obtained by combining the blue-green emission from ZnS films with the orange-red emission from PS layers. Based on the I-V characteristic, the ZnS/PS heterojunction exhibits the rectifying junction behaviour, and an ideality factor n is calculated to be 77 from the I-V plot. 相似文献
992.
New electrostatic instabilities in the plasma shock front are reported. These instabilities are driven by the electro- static field which is caused by charge separation and the parameter gradients in a plasma shock front. The linear analysis to the high frequency branch of electrostatic instabilities has been carried out and the dispersion relations are obtained numerically. There are unstable disturbing waves in both the parallel and perpendicular directions of shock propagation. The real frequencies of both unstable waves are similar to the electron electrostatic wave, and the unstable growth rate in the parallel direction is much greater than the one in the perpendicular direction. The dependence of growth rates on the electric field and parameter gradients is also presented. 相似文献
993.
中心区模型试验装置是进行强流回旋加速器关键技术研究的实验平台.本文介绍了为该试验装置所设计的偏转板和中心区,包括物理设计的考虑、数控加工技术及安装精度的控制技术.由于电磁场的相互作用粒子在偏转板中的的轨迹为螺旋线,其电极形状复杂,加工采用四轴联动以上的数控机床完成.为满足束流动力学的需要,中心区的电极结构比较复杂而且不规则,表面光洁度要求高,另外尺寸和安装位置精度要求严格.中心区曲面电极结构由三轴联动加工中心加工完成,中心区地电极与高频D板头部的电极间隙非常重要,在安装过程中,制作了专用的"电极间隙通止规"控制电极间隙精度在±0.05mm. 相似文献
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L. V. Poluyanov 《Theoretical and Experimental Chemistry》1989,25(3):312-314
We have calculated the semiclassical shape of the absorption band for a triatomic complex of C2V symmetry, corresponding to an electronic transition from the non-degenerate ground-state and two excited states Ai, Bi (i=1, 2) when there exists a point of accidental degeneracy Ai=Bi. The analysis is done assuming that two normal vibrations are excited, one of which is nontotally symmetric. A comparison is made with the band of the
transition, characterizing optical absorption in Jahn-Teller systems.Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 25, No. 3, pp. 337–339, May–June, 1989. 相似文献
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S. A. Poluyanov F. V. Tuzikov Yu. V. Larichev S. V. Tsybulya 《Journal of Structural Chemistry》2016,57(4):771-776
New approaches to the analysis of small-angle X-ray scattering data from nanoscale systems based on the optimization and direct multiple shooting methods are presented. A program is developed, which bears on these new approaches and allows a user to model small-angle X-ray diffraction data, introduce collimation corrections, and analyze dispersions in the samples. The program results for a number of typical nanosized systems (sols, catalysts) are reported and the comparison with currently available programs for small-angle data processing is presented. 相似文献
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