Conservation of a regenerative stream in an acyclic net

Translated fromProblemy Ustoichivosti Stokhasticheskikh Modelei. Trudy Seminara, 1988, pp. 115–120.     

Electron traps and positive DLTS signals in VPE GaAs MESFETs

Capacitance DLTS measurements have been performed in VPE GaAs MESFETs prepared on Bridgman Cr-doped and LEC undoped semi-insulating substrates. A band of electron traps not intrinsically related to the VPE growth process and accumulating near the metal (gate) — semiconductor interface was detected in all the samples. Deeper regions into the channel were free from any detectable trap. Near pinch-off conditions, a positive capacitance signal was found to dominate the DLTS spectra only in the case of samples prepared on Cr-doped substrates. The hypothesis of this positive transient being related to changes in the occupation of surface states in the ungated surface access regions has been checked by comparing experimental and calculated dependencies of the signal amplitude on reverse gate voltage. Unexplained discrepancies, together with the absence of positive signal in MESFETs prepared on LEC undoped substrates, suggest the possibility of hole emission from hole traps within the bulk of the device.     

The complexity of cutting complexes

This paper investigates the combinatorial and computational aspects of certain extremal geometric problems in two and three dimensions. Specifically, we examine the problem of intersecting a convex subdivision with a line in order to maximize the number of intersections. A similar problem is to maximize the number of intersected facets in a cross-section of a three-dimensional convex polytope. Related problems concern maximum chains in certain families of posets defined over the regions of a convex subdivision. In most cases we are able to prove sharp bounds on the asymptotic behavior of the corresponding extremal functions. We also describe polynomial algorithms for all the problems discussed.Bernard Chazelle wishes to acknowledge the National Science Foundation for supporting this research in part under Grant No. MCS83-03925. Herbert Edelsbrunner is pleased to acknowledge the support of Amoco Fnd. Fac. Dev. Comput. Sci. 1-6-44862.     

The Third-Order Singular-Perturbation Expansion of the Planar Cold-Fluid Magnetron Equations

The singular-perturbation expansion of the plasma cold-fluid equations for crossed fields in a planar geometry is presented. The general expansion is carried out to third order. Various instabilities that occur in the first, second, and third orders are discussed.     

Correlation between time functions of sound pressure, masking, and OAE suppression

Periodic sound-pressure time functions with frequency components below 50 Hz were used to measure within their period (a) the temporal course of masking, called a masking-period pattern (MPP), and (b) the temporal course of suppression of delayed evoked otoacoustic emissions, called a suppression-period pattern (SPP). Three different time functions were used: an alternating Gaussian impulse, its first integral, and its second integral. In each case, the course of the SPP is a mirror image of that of the MPP: Small masking corresponds to small suppression, while strong masking coincides with almost total suppression. Since otoacoustic emissions are assumed to have their origin in the inner ear, it can be argued that simultaneous masking, an effect including central processing, is very strongly based on peripheral processes located in the cochlea. Both MPP and SPP are closely related to the second derivative of the sound-pressure time function.     

Effect of hydrogen on the photoelectronic properties of GaAs/InGaAs quantum-well heterostructures with an island palladium layer on the surface

The effect of hydrogen on the photoluminescence and planar conductivity of GaAs/InGaAs quantum-well heterostructures with an island Pd layer at the anodically oxidized surface was studied. Unlike continuous deposited Pd layers, island layers do not cause the formation of defects in the GaAs surface region and yet the Pd layer maintains high catalytic activity with respect to hydrogen. It is found that the thermal treatment of such a structure in a hydrogen atmosphere causes atomic-hydrogen passivation of the defects in quantum wells. Studies of the characteristics of planar photoresistors with an island Pd layer acting as hydrogen sensors show that their hydrogen detectivity is approximately two orders of magnitude higher than that of diode structures with continuous Pd layers.     

Electrooptical anharmonicity parameters of the strong hydrogen bond

Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 54, No. 4, pp. 581–587, April, 1991.