Effects of shaded facets on the performance of metal-coated etched diffraction grating demultiplexer

A finite-difference time-domain (FDTD) method combined with a periodic boundary condition is used to analyze the diffraction efficiency of an etched diffraction grating (EDG) demultiplexer coated with a metallic film at the backside. The numerical results show that the diffraction loss is mainly due to the scattering effect of shaded facets of a metal-coated grating at both the polarizations. However, the same shaded facets can produce a higher loss for a TM polarization than that for a TE polarization, which induces a higher polarization dependent loss (PDL) of the demultiplexer.     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.     

离线测量钍快中子裂变反应率方法

钍快中子裂变反应率是钍铀燃料循环中的重要数据.为了测量基于聚变-裂变混合能源堆包层概念设计的钍样品在宏观中子学装置中的钍快中子裂变数据,发展了钍快中子裂变率的离线活化γ测量方法.通过测量232Th裂变碎片85mKr的β衰变产物85Rb发射的151.16 keV特征γ射线,并结合钍裂变产额数据,获得了钍样品装置中232Th裂变反应率的分布.详细介绍了此方法的原理和影响因素,并利用14 MeV的D-T中子源在贫铀球壳中开展了校验实验,实验不确定度为5.3%—5.5%.采用MCNP5程序和ENDF/B-VI及ENDF/B-VII数据库模拟计算的结果与实验结果在实验不确定度内基本符合,这证明该方法能够有效地模拟装置中232Th裂变反应率.     

Comparison of modeling approaches to ultrasonic testing at near critical angles

Modeling of ultrasonic testing has been paid a great attention in nondestructive evaluation community recently since it can provide thorough understanding of underlying physics of ultrasonic testing. As a result, there have been developed various modeling approaches up to now. Especially, many practical models have been developed based on either the multi-Gaussian beam or the Rayleigh-Sommerfeld integral. This paper discusses the modeling of ultrasonic testing with oblique incidence at the near critical angles using these two approaches. The theoretical models that can predict the reflection signals from side drilled cylindrical holes in solid specimen immersed in water are developed. Then, the theoretical predictions for the oblique incidence at the near critical angles are compared to the experiments for the investigation of model behavior.     

HL—1装置汤姆逊散射测量空间两点电子温度

本文叙述用激光汤姆逊散射方法测量HL-1装置在不同放电条件下空间两点的电子温度。简要介绍了测量条件,空间两点测量的实验安排及数据获取系统等。对实验结果进行了初步分析。在适当改变等离子体边缘径向电场分布时,电子温度有明显增加。     

单偏振控制器环形腔光纤激光器实验研究

理论分析了非线性偏振旋转环形腔作为类饱和可吸收体获得脉冲的物理机理。在光纤环形腔结构中,采用单个偏振控制器实现了非线性偏振旋转锁模,直接获得了脉冲宽度为131 fs的超短脉冲输出。实验中,采用性能稳定的976 nm半导体二极管激光器作为抽运源,使用高掺杂浓度的Er3 光纤为增益介质,通过调节偏振控制器,获得了光谱谱宽(3 dB带宽处)为23.5 nm的稳定锁模脉冲输出。脉冲中心波长为1535.9 nm,平均功率为5.91 mW,脉冲重复率为11.20 MHz。     

Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Strong photoluminescence (PL) covering the green-violet band was measured at room temperature in an as-deposited amorphous Si-in-SiN_x film, which was prepared by plasma-enhanced chemical vapor deposition on cold (below 60 °C) Si(1 0 0) wafer. With an increase in photon energy of excitation, the PL shifts its peak position from 510 to 416 nm at yet-comparable intensities, thus allowing an energy-selected excitation in practical application. Also, a time-resolved analysis was performed for the emissions at various wavelengths, which showed a decay time shorter than 1.0 ns. These results indicate that the nanostructured Si-in-SiN_x can be a promising candidate material for the fabrication of silicon-based optical interconnections and switches.