Global symmetry breaking in the nonconserved order parameter system during phase ordering

We study global symmetry breaking in the 2D system of scalar nonconserved order parameter following a quench to zero temperature. We show that the instant of time when the symmetry is broken and the final morphology is chosen corresponds to the saturation of the order parameter inside the domains. There are three possible final morphologies: the positive and negative order parameter final morphology, and the state of the coexisting positive and negative order parameter subsystems with a flat interface between them. We find also that each type of the final morphology constitutes about 1/3 of all cases, what agrees with the results obtained recently by Spirin et al. [Phys. Rev. E 65, 016119 (2001)]. Our results are pertinent for the two dimensional systems, but we suspect that there is also a way to apply similar arguments for the three dimensional ones.     

Superhigh numerical aperture (NA > 1.5) micro gradient-index lens based on a dual-material approach

We describe a novel scheme for obtaining a superhigh numerical aperture gradient-index (SHNA GRIN) lens from multiple thin layers of two or more materials with large refractive-index contrast. Design procedures for the lens are described, including variation of the layer thickness to achieve focusing and of the thickness limit to reduce scattering loss. We use an exact numerical solution by the finite-difference time-domain method to evaluate the lens's performance. Specific examples of a SHNA GRIN lens with a SiO2-TiO2 material system designed for fiber coupling to a nanowaveguide are shown to have focusing FWHM spot sizes of 0.53-0.7 microm at lambda =1.55 microm (corresponding to a NA of approximately 1.6-1.1) with 2.7-2.4% more loss than an ideal continuous index profile GRIN lens. With this approach, a SHNA GRIN lens with a NA of > 1.5 and a length of <20 microm can be achieved with currently available thin-film deposition techniques.     

Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect

In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni₃B crystallized was decomposed to Ni and B₂O₃ above 400 °C and the Ni₃P crystallized was decomposed to Ni and P₂O₅ above 600 °C respectively in Ar atmosphere. Also, the Ni₃B was decomposed to Ni and free B above 400 °C and the Ni₃P was decomposed to Ni and free P above 600 °C respectively in H₂ atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer.     

Surface redox induced bipolar switching of transition metal oxide films examined by scanning probe microscopy

The bipolar resistive switching mechanisms of a p-type NiO film and n-type TiO₂ film were examined using local probe-based measurements. Scanning probe-based current–voltage (I–V) sweeps and surface potential/current maps obtained after the application of dc bias suggested that resistive switching is caused mainly by the surface redox reactions involving oxygen ions at the tip/oxide interface. This explanation can be applied generally to both p-type and n-type conducting resistive switching films. The contribution of oxygen migration to resistive switching was also observed indirectly, but only in the cases where the tip was in (quasi-) Ohmic contact with the oxide.     

Using a micro-molding process to fabricate polymeric wavelength filters

A procedure for fabricating a high aspect ratio periodic structure on a UV polymer at submicron order using holographic interferometry and molding processes is described. First, holographic interferometry using a He–Cd (325 nm) laser was used to create the master of the periodic line structure on an i-line sub-micron positive photoresist film. A 20 nm nickel thin film was then sputtered on the photoresist. The final line pattern on a UV polymer was obtained from casting against the master mold. Finally, a SU8 polymer was spun on the polymer grating to form a planar waveguide or a channel waveguide. The measurement results show that the waveguide length could be reduced for the waveguide having gratings with a high aspect ratio.     

Understanding the junction degradation mechanism in CdS/CdTe solar cells using a Cd-deficient CdTe layer

It is known that CdTe solar cells are often degraded under solar illumination. But the degradation mechanism is not fully proved because it does not appear consistently. The junction degradation in CdS/CdTe solar cells was investigated using a CdTe layer with Cd deficient composition, where Cd vacancy concentration is high. It was found that the Cu atoms easily filled the Cd vacancies in CdTe and transport to junction area from Cu back contact. PL measurement and spectral quantum efficiency measurement showed that the incorporation of Cu atoms in CdS forms a defect energy level at 1.55 eV below the conduction band in CdS. As a result, the junction built-in potential is decreased and light penetration into CdTe absorber is shielded. For reliable and stable CdTe cells, the formation of Cd vacancy in CdTe should be avoided by careful control of CdTe.     

All-optical switching with a biexcitonic double lambda system

A double lambda four-level system could be implemented with biexcitonic transitions on GaAs quantum well. We observed that the phase dependent biexcitonic transition could be explained by interference between one-photon and three-photon transition in a double lambda four-level system. An ultralow-light switch pulse could control 80% of biexcitonic absorption, which demonstrated all-optical switching with biexcitonic double lambda system.     

Effective control of photoluminescence from ZnO nanowires by a-SiN_x:H decoration

The a-SiN_x:H with a large bandgap of 3.8 eV was utilized to decorate ZnO nanowires. The UV emission from the a-SiN_x:H-decorated ZnO nanowires are greatly enhanced compared with the undecorated ZnO nanowire. The deep-level defect emission has been completely suppressed even though the sample was annealed at temperatures up to 400 °C. The incorporation of H and N is suggested to passivate the defect states at the nanowire surface and thus result in the flat-band effect near ZnO surface as well as reduction of the nonradiative recombination probability.     

A possible origin of room temperature ferromagnetism in Indium-Tin oxide thin film: Surface spin polarization and ferromagnetism

Room temperature ferromagnetism in both transition-metals doped and undoped semiconductor thin films and nanostructures challenges our understanding of the magnetism in solids. In this report, we performed the magnetic measurement and Andreev reflection spectroscopy study on undoped Indium-Tin oxide (ITO) thin films and bulk samples. The magnetic measurement results of thin films show that the total magnetization/cm² is thickness independent. Prominent ferromagnetism signal was also discovered in bulk samples. Spin polarized electron transports were probed on ITO thin film/superconductor interface and bulk samples surface/superconductor interface. Based on the magnetic measurement results and spin polarization measurement data, we propose that the ferromagnetism in this material originates from the surface spin polarization and this surface polarization may also explain the room temperature ferromagnetism discovered in other undoped oxide semiconductor thin films and nanostructures.