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931.
The influence of spatio-temporal external multiplicative fluctuations on a single kink in a bistable distributed system is studied. For this purpose we derive a stochastic dynamic equation for the position of the shifted kink. An analytical estimate for spatio-temporally uncorrelated fluctuations is represented and discussed. We draw the conclusion that multiplicative noise induces a propagation of the most probable kink into the region of larger noise. This effect is demonstrated in numerical simulations. 相似文献
932.
Polymer lightguides of PMMA doped with the azo dyes methyl-red and N, N-dihexyl-4-amino-4'-nitro-azobenzene (DHANA) are investigated with respect to their opto-optical properties. The trans-cis photoisomerisation of the dyes leads to reversible polarization-dependent optically induced refractive index changes. The index changes are anisotropic. Birefringence is measured using index matched lightguides. The changes with respect to each polarization are determined by leaky mode spectroscopy and by using a half-integrated interferometer. These changes are intensity dependent and, with a suitable geometry, bistability at low intensities (3 mW/mm3) can be obtained. 相似文献
933.
934.
935.
Three-dimensional astigmatic resonators, typical examples of which are the resonators bounded by cylindrical-spherical mirrors and cylindrical-cylindrical mirrors oriented at an arbitrary crossed angle, are investigated in detail by using a complex curvature tensor concept and generalized tensor ABCD law. Computerized numerical calculations illustrate some interesting characteristics of these astigmatic resonators. 相似文献
936.
937.
938.
939.
The interaction of triethylgallium (TEG) with the Ga-stabilized GaAs(100) surface in the presence of In and Al has been investigated using AES (Auger electron spectroscopy), HREELS (high resolution electron energy loss spectroscopy) and TDS (thermal desorption spectroscopy) techniques. Al is shown to greatly increase the saturation surface coverage of TEG on the surface and to suppress the desorption of TEG and diethylgallium (DEG). Etching of the surface Al by TEG is observed, resulting in the formation of gas phase Al organic species. Alkyl migration from GA to Al centres occurs, and the presence of Al substantially enhances the irreversible deposition of C. In is found to enhance DEG desorption and to lower the temperature at which absorbed ethyl groups decompose to gas phase ethene. Computer modelling has been carried out to extract kinetic parameters from measured thermal desorption spectra. These parameters are then used to calculate expected partial growth rates of GaAs during the growth of GaxAl1−xAs and GaxIn1−xAs using TEG. The data provide a molecular level understanding of the GaAs pa rtial growth rate variations arising during the deposition of III–V ternary materials. 相似文献
940.
In this article we prove a local existence and uniqueness theorem for the Kadomtsev-Petviashvili Equation (u
t
+u
xxx
+uu
x
)
x
−u
yy
=0) in the Sobolev spaces of orders≥3, with initial values in the same spaces, and periodic boundary conditions. This theorem improves previous results based
upon the application of singular perturbation techniques. 相似文献