Tunneling radiation of a Gibbons-Maeda dilaton black hole

We use the Parikh-Wilczek method to treat Hawking radiation as a tunneling process across the event horizon and calculate the emission rate of a Gibbons-Maeda dilaton black hole. We show that if self-gravitation is taken into account, then the radiation deviates from the purely thermal spectrum, and the corrected spectrum is consistent with an underlying unitary theory. __________ Translated from Teoreticheskaya i Matematicheskaya Fizika, Vol. 151, No. 1, pp. 172–175, April, 2007.     

Asymptotic and boundary integral formulae for the computational reconstruction of small conductivity imperfections

In this paper we investigate the electrostatic problem of determining conductivity profiles from the knowledge of boundary currents and voltages. We obtain an improved estimate for the voltage potential of a two-dimensional conductor having finitely many circular inclusions and piecewise constant conductivity profile. We derive an asymptotic expansion for the voltage potential in terms of the reference voltage potential and the location, size, and conductivity of the inhomogeneities. This representation is used to formulate the nonlinear least squares problem for estimating the location and size of the inhomogeneities. Required boundary data for the voltage potential are generated numerically by solving a system of integral equations. Computational experiments are presented to demonstrate the effectiveness of our identification procedure.     

Theory of Valuations on Manifolds: A Survey

This is a non-technical survey of a recent theory of valuations on manifolds constructed in [A10], [A11], [AF] and [A12], and actually a guide to this series of articles. We also review some recent related results obtained by a number of people. Received: February 2006, Revision: June 2006, Accepted: June 2006     

UPML formulation for truncating conductive media in curvilinear coordinates

This work presents a formulation based on UPML for truncating conductive media by using a local and non-orthogonal coordinate system to solve Maxwell’s equations by the FDTD method. The detailed procedure for obtaining the UPML equations for this case is shown and the complete equation set is provided.     

On self-reciprocal polynomials

In this paper we establish a sharp result concerning integral mean estimates for self-reciprocal polynomials.     

Quantitative vibration amplitude measurement with time-averaged digital speckle pattern interferometry

A new method of using time-averaged digital speckle pattern interferometry for the quantitative measurement of vibration amplitude was developed. Signal processing techniques especially the Hilbert transformation for quantitative evaluation of the Bessel fringes obtained in time-averaged digital speckle pattern interferometry were explored. The quadrature signal after Hilbert transformation is equivalent to a 90° phase-shifted interferogram for a monotonically increasing or decreasing phase function. An algorithm was developed for Bessel fringe contrast enhancement and phase extraction. The techniques were tested numerically and experimentally. Sub-fringe quantification of the time-averaged vibration fringes is realised with the proposed method. Compared with the commonly used phase shift method which requires a minimum of two images for image processing, this method requires only one fringe pattern for data extraction.     

On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects

Using the theoretically calculated point-defect total-energy values of Baraff and Schlüter in GaAs, anamphoteric-defect model has been proposed by Walukiewicz to explain a large number of experimental results. The suggested amphoteric-defect system consists of two point-defect species capable of transforming into each other: the doubly negatively charged Ga vacancyV _Ga ^2– and the triply positively charged defect complex (AS_Ga+V _As)³⁺, with As_Ga being the antisite defect of an As atom occupying a Ga site andV _As being an As vacancy. When present in sufficiently high concentrations, the amphoteric defect systemV _Ga ^2– /(As_Ga+V _As)³⁺ is supposed to be able to pin the GaAs Fermi level at approximately theE _v +0.6 eV level position, which requires that the net free energy of theV _Ga/(As_Ga+V _As) defect system to be minimum at the same Fermi-level position. We have carried out a quantitative study of the net energy of this defect system in accordance with the individual point-defect total-energy results of Baraff and Schlüter, and found that the minimum net defect-system-energy position is located at about theE _v +1.2 eV level position instead of the neededE _v +0.6 eV position. Therefore, the validity of the amphoteric-defect model is in doubt. We have proposed a simple criterion for determining the Fermi-level pinning position in the deeper part of the GaAs band gap due to two oppositely charged point-defect species, which should be useful in the future.