Stark effect of negatively and positively charged excitons in semiconductor quantum wells

We study the effect of an electric field applied normal to the layers on the binding energy of charged excitons (or trions) in GaAs quantum wells. We find that, in contrast to the neutral exciton, their binding energy is sharply reduced by modest electric fields. The effect is stronger for the positively charged exciton than the negatively charged one. The ionisation of the excess carrier is explained by the field-induced polarisation of the electron and hole subband wave functions.     

Experimental evidence for a metal–insulator transition and geometric effect in a half-filled Landau level

We have measured the low-temperature transport properties of a high-mobility front-gated GaAs/Al Ga As heterostructure. By changing the applied gate voltage, we can vary the amount of disorder within the system. At a Landau level filling factor , where the system can be described by the composite fermion picture, we observe a crossover from metallic to insulating behaviour as the disorder is increased, in agreement with theory. We also report experimental evidence of geometric effect for composite fermions induced by an effective magnetic field.     

Spin dependent surface recombination in silicon p-n junctions: The effect of irradiation

We present the results of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the SiSiO₂ interface is increased, and saturation of the spin resonance increases the diode forward current by 5 parts in 10⁴. The results cannot be described by a conventional Shockley-Read recombination model. An alternative picture is proposed involving recombination between trapped electrons and trapped holes.     

A note on dominating sets and average distance

We show that the total domination number of a simple connected graph is greater than the average distance of the graph minus one-half, and that this inequality is best possible. In addition, we show that the domination number of the graph is greater than two-thirds of the average distance minus one-third, and that this inequality is best possible. Although the latter inequality is a corollary to a result of P. Dankelmann, we present a short and direct proof.     

Zeeman splitting in ballistic hole quantum wires

We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin splitting is discernible up to B = 8.8 T. The observed large Zeeman splitting anisotropy in our hole quantum wires demonstrates the importance of quantum confinement for spin splitting in nanostructures with strong spin-orbit coupling.     

0.7 Structure and zero bias anomaly in ballistic hole quantum wires

We study the anomalous conductance plateau around G=0.7(2e2/h) and the zero bias anomaly in ballistic hole quantum wires with respect to in-plane magnetic fields applied parallel B parallel and perpendicular B perpendicular to the quantum wire. As seen in electron quantum wires, the magnetic fields shift the 0.7 structure down to G=0.5(2e2/h) and simultaneously quench the zero bias anomaly. However, these effects are strongly dependent on the orientation of the magnetic field, owing to the highly anisotropic effective Landé g-factor g* in hole quantum wires. Our results highlight the fundamental role that spin plays in both the 0.7 structure and zero bias anomaly.     

一种新型的高频半导体量子点单电子泵

除了直流负电压外,还在浅法刻蚀出的GaAs/AlGaAs量子线上的两个金属指形门上分别叠加两个相位相差π的正弦信号,从而对形成量子点的两个势垒作不等幅调制.在无源漏偏压的情况下,通过周期形成的量子点实现了单电子的搬运.由于新的半导体量子点单电子泵不是依赖库仑阻塞效应通过隧穿进行单电子输运,因此,该器件就不会受到固定隧穿时间引起的低工作频率限制.在1.7K温度下,频率达到3GHz仍然可以观测到量子化电流平台,对应的电流值达到0.5nA量级.这种新器件提供了实现高速度、高精度搬运单电子的另一种可能途径. 关键词： 单电子输运 单电子旋转门 单电子泵 量子化电流平台     

Metallic behavior in dilute two-dimensional hole systems

We have studied the metallic behavior in low-density two-dimensional p-GaAs systems, close to the apparent metal-insulator transition. Two observations are made concerning the origins of the metallic-like behavior. Within a given sample the strength of the metallic behavior is almost independent of the asymmetry of the confining potential, and is predominantly determined by the low-temperature resistivity (i.e., by k(F)l). In all our samples we find that at low densities, close to the transition from insulating to metallic behavior, the fractional decrease in conductivity with increasing temperature scales as T/T(F).