Dirichlet型空间上的乘子

本文主要根据τ与μ的不同取值分三种情况刻划了Cn中单位球上Dirichlet 型空间上的点乘子空间M(Dτ,Dμ),并通过两个函数的构造表明:当τ≤n时,包含 关系M(Dτ)(?)Dτ和当τ>μ,τ>n-1时,包含关系M(Dτ)(?) M(Dμ)是严格的.     

R~(2,1)中线性Weingarten曲面的Bcklund变换(英文)

本文对三维Minkowski空间R~(2,1)中具有性质K-2mH+m~2-l~2=0或H=constant的类时曲面定义了一个Darboux线汇,同时得到了相应的Bcklund变换。     

河南省城市居民消费结构比较研究

本文主要应用聚类分析方法 ,对河南省 17个地市级城市居民的消费结构进行了比较统计分析 ,从而得到了各城市居民消费结构的一些特点和规律 ,并进一步探讨了其消费结构、可支配收入与总消费支出之间的关系     

On the blow-up rate of large solutions for a porous media logistic equation on radial domain

In this paper we establish the exact blow-up rate of the large solutions of a porous media logistic equation. We consider the carrying capacity function with a general decay rate at the boundary instead of the usual cases when it can be approximated by a distant function. Obtaining the accurate blow-up rate allows us to establish the uniqueness result. Our result covers all previous results on the ball domain and can be further adapted in a more general domain.     

一类拟线性大系统的稳定性

本文应用大系统的分解方法和一个推广的不等式,研究了一类拟线性大系统的稳定性问题,所得结果简洁、易于验证,且推导过程不复杂,最后给出了应用实例。     

Renormalization group dependence of the QCD coupling

The general relation between the standard expansion coefficients and the beta function for the QCD coupling is exactly derived in a mathematically strict way. It is accordingly found that an infinite number of logarithmic terms are lost in the standard expansion with a finite order, and these lost terms can be given in a closed form. Numerical calculations, by a new matching-invariant coupling with the corresponding beta function to four-loop level, show that the new expansion converges much faster.     

微纳米加工技术在纳米物理与器件研究中的应用

物质在纳米尺度下可能呈现出与体材料不同的物理特件，这正是纳米科技发展的基础之一。要想探索在纳米尺度下材料物埋性质的变化规律及可能的应用领域，离不开相应的技术手段，微纳米加工技术作为当今高技术发展的重要技术领域之一，是实现功能人工纳米结构与器件微纳米化的基础。本文根据几个不同的应用领域，介绍了微纳米加工技术在纳米物理与器件研究领域的应用。     

Generalization of Einstein relation for doped organic semiconductors

Under the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation for electron and hole transport in doped organic semiconductor thin films are developed. Numerical calculations show that, although traditional Einstein relation still holds for low carrier concentrations, that is, the diffusion-coefficient-to-mobility ratio in units of k_BT/q, with k_B the Boltzmann’s constant, T the temperature and q the elementary charge, equals 1. But when the electron (hole) concentration is high, the diffusion-coefficient-to-mobility ratio for electrons (holes) changes strongly with the electron (hole) concentration, the doping level, the mean energy of LUMOs (HOMOs) of the dopant E_Ld (E_Hd) and the host E_L (E_H), as well as their variances. Dopants with E_Ld<E_L (E_Hd>E_H) affect the diffusion-coefficient-to-mobility ratio mainly in the range of low and middle carrier concentrations, while those with E_Ld>E_L (E_Hd<E_H) have significant effect only in the range of high carrier concentrations. It was found that there can be a maximum in the dependence of the diffusion-coefficient-to-mobility ratio on the quasi-Fermi energy or carrier concentration exist, for appropriate values of the doping level, the mean energy and variance of LUMO or HOMO states of the dopant. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.