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991.
用新研制成的DE36平台钢制的轴对称和平面应变试样,进一步考察了临界空穴扩张比V_(Gi)准则[1]、[2]、[3]的适用性。实验和大应变有限元理论计算结果表明,V_(Gi)准则适用于所研究材料。文中指出,按V_(Gi)准则可根据试样或构件材料中V_G的发展变化来预起裂位置。  相似文献   
992.
The relations between the electrical characteristics of BaSn1?x Sb x O3 perovskite system and the contents of BaO, Sb2O3 and silicate sintering agent were studied by X-ray diffraction analysis and Mössbauer spectroscopy. It was found that the electrical conductivity is related to the substitution of Sb3+ for Sn4+, the content of sintering agent and the phase constitutents in samples. BaSnO3, Ba3Sn2O7, Ba2SnO4 and SnO2 phases might appear in different fractions when the contents of BaO change from 0.5 mole to 3.5 mole. In low antimony percentage condition, pentavalent Sb3+ ions inserted in Sn4+ sites and formed the donor center. In high antimony percentage (x≥0.20) condition, the existence of an insulating phase (BaSb2O6) was confirmed.  相似文献   
993.
We present in this paper a model study on the “order-by-disorder” process in the cyclic phase of spin-2 condensate, which forms a family of incommensurable, spiral degenerate ground states. On the basis of the ordering mechanism of entropic splitting, it is demonstrated that the energy corrections resulting from quantum fluctuations of disorder lift the accidental degeneracy of the cyclic configurations and thus lead to an eventual spiral order called the cyclic order. The order-by-disorder phenomenon is then realized even if the magnetic field exists. Finally, we show that our theoretic observations can be verified experimentally by direct detection of the cyclic order in the 87Rb condensate of a spin-2 manifold with a weak magnetic field.  相似文献   
994.
995.
Arylated anthraquinone derivatives of different sizes and different π‐basicities have been prepared, and the electrochemical behaviour of these substances has been studied on screen printed graphite electrodes in the three room temperature ionic liquids (RTILs), 1‐butyl‐3‐methylimidazolium hexafluorophosphate ([C4MIM][PF6]), 1‐hexyl‐3‐methylimidazolium hexafluorophosphate ([C6MIM][PF6]) and 1‐octyl‐3‐methylimidazolium hexafluorophosphate ([C8MIM][PF6]). Half redox potentials for the first and second one electron reduction waves were identified, and the diffusion coefficient values were estimated from cyclic voltammetry measurements. The influence of the nature of the RTIL and of the substitution pattern of the anthraquinone on the solvodynamic radii were studied. A correlation of the reductive potentials with the corresponding Hammett constants of the substituents was tested. Copyright © 2013 John Wiley & Sons, Ltd.  相似文献   
996.
The richly functionalized basal plane bonded to polar organic moieties makes graphene oxide (GO) innately hydrophilic. Here, a methodology to synthesize fluorinated graphene oxide by oxidizing the basal plane of fluorinated graphite, allowing for tunable hydrophobicity of GO, is reported. Fluorine exists as tertiary alkyl fluorides covalently bonded to graphitic carbons, and using magic‐angle spinning (MAS) 13C NMR as a primary tool chemical structures for the two types of synthesized fluorinated graphene oxides (FGOs) with significantly different fluorine contents are proposed. The low surface energy of the C–F bond drastically affects GO's wetting behavior, leading to amphiphobicity in its highly fluorinated form. Ease of solution processing enables the fabrication of inks that are spray‐painted on various porous/non‐porous substrates. These coatings maintain amphiphobicity for solvents with surface tensions down to 59 dyn/cm, thus bypassing existing lithographic means to create similar surfaces. The approach towards fluorinating GO and fabricating graphene‐based surfaces with tunable wettability opens the path towards unique, accessible, carbon‐based amphiphobic coatings.  相似文献   
997.
Biocompatible, near‐infrared luminescent gold nanoclusters (AuNCs) are synthesized directly in water using poly(ethylene glycol)‐dithiolane ligands terminating in either a carboxyl, amine, azide, or methoxy group. The ≈1.5 nm diameter AuNCs fluoresce at ≈820 nm with quantum yields that range from 4–8%, depending on the terminal functional group present, and display average luminescence lifetimes approaching 1.5 μs. The two‐photon absorption (TPA) cross‐section and two‐photon excited fluorescence (TPEF) properties are also measured. Long‐term testing shows the poly(ethylene glycol) stabilized AuNCs maintain colloidal stability in a variety of media ranging from saline to tissue culture growth medium along with tolerating storage of up to 2 years. DNA and dye‐conjugation reactions confirm that the carboxyl, amine, and azide groups can be utilized on the AuNCs for carbodiimide, succinimidyl ester, and CuI‐assisted cycloaddition chemistry, respectively. High signal‐to‐noise one‐ and two‐photon cellular imaging is demonstrated. The AuNCs exhibit outstanding photophysical stability during continuous‐extended imaging. Concomitant cellular viability testing shows that the AuNCs also elicit minimal cytotoxicity. Further biological applications for these luminescent nanoclustered materials are discussed.  相似文献   
998.
999.
Schottky junctions made from a titanium dioxide nanotube (TiO2NT) array in contact with a monolayer graphene (MLG) film are fabricated and utilized for UV light detection. The TiO2NT array is synthesized by the anodization and the MLG through a simple chemical vapor deposition process. Photoconductive analysis shows that the fabricated Schottky junction photodetector (PD) is sensitive to UV light illumination with good stability and reproducibility. The corresponding responsivity (R), photoconductive gain (G), and detectivity (D*) are calculated to be 15 A W?1, 51, and 1.5 × 1012 cm Hz1/2 W?1, respectively. It is observed that the fabricated PD exhibits spectral sensitivity and a simple power‐law dependence on light intensity. Moreover, the height of the Schottky junction diode is derived to be 0.59 V by using a low temperature I–V measurement. Finally, the working mechanism of the TiO2NT array/MLG film Schottky junction PD is elucidated.  相似文献   
1000.
Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μFE) of 13.2 cm2/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (Vth) of 1.1 V/decade and 9.1 V, respectively, were inferior. However, ZTO TFTs with Ta film inserted as a diffusion barrier, exhibited improved SS and Vth values of 0.48 V/decade and 3.0 V, respectively as well as a high μFE value of 18.7 cm2/Vs. The improvement in the Ta‐inserted device was attributed to the suppression of Cu lateral diffusion into the ZTO channel region. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   
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