首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   313028篇
  免费   5161篇
  国内免费   1032篇
化学   168435篇
晶体学   4475篇
力学   12893篇
综合类   5篇
数学   40345篇
物理学   93068篇
  2021年   2704篇
  2020年   2975篇
  2019年   3333篇
  2018年   4255篇
  2017年   3946篇
  2016年   6562篇
  2015年   4693篇
  2014年   6391篇
  2013年   15094篇
  2012年   12874篇
  2011年   14939篇
  2010年   10123篇
  2009年   9681篇
  2008年   13538篇
  2007年   13521篇
  2006年   12628篇
  2005年   11485篇
  2004年   10325篇
  2003年   8873篇
  2002年   8506篇
  2001年   8479篇
  2000年   6580篇
  1999年   5169篇
  1998年   4309篇
  1997年   4182篇
  1996年   4224篇
  1995年   3670篇
  1994年   3650篇
  1993年   3728篇
  1992年   3847篇
  1991年   3905篇
  1990年   3616篇
  1989年   3515篇
  1988年   3502篇
  1987年   3375篇
  1986年   3210篇
  1985年   4414篇
  1984年   4561篇
  1983年   3575篇
  1982年   3896篇
  1981年   3783篇
  1980年   3675篇
  1979年   3715篇
  1978年   3799篇
  1977年   3677篇
  1976年   3804篇
  1975年   3429篇
  1974年   3437篇
  1973年   3500篇
  1972年   2368篇
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
181.
The spin-1 Ising model, which is equivalent to the three-component lattice gas model, is used to study wetting transitions in three-component surfactant systems consisting of an oil, water, and a nonionic surfactant. Phase equilibria, interfacial profiles, and interfacial tensions for three-phase equilibrium are determined in mean field approximation, for a wide range of temperature and interaction parameters. Surfactant interaction parameters are found to strongly influence interfacial tensions, reducing them in some cases to ultralow values. Interfacial tensions are used to determine whether the middle phase, rich in surfactant, wets or does not wet the interface between the oil-rich and water-rich phases. By varying temperature and interaction parameters, a wetting transition is located and found to be of the first order. Comparison is made with recent experimental results on wetting transitions in ternary surfactant systems.This paper is dedicated to J. K. Percus in honor of his 65th birthday.  相似文献   
182.
183.
In this paper, we show that in some cases, no proper covering of a locally compact group topologically generated by left translations of a topological loop can occur as the group topologically generated by left translations of a topological loop. __________ Translated from Sovremennaya Matematika i Ee Prilozheniya (Contemporary Mathematics and Its Applications), Vol. 22, Algebra and Geometry, 2004.  相似文献   
184.
This paper is a continuation of the authors'previous paper[1].In this paper the authorsprove,assuming additional conditions on the initial data,some results about the existence anduniqueness of the entropy weak solutions of the Cauchy problem for the singular hyperbolicsystem a_t+(au)_x_2au/x=0,u_t+1/2(a~2+u~2)_x=0,x>0,t≥0.  相似文献   
185.
Several new families of c‐Bhaskar Rao designs with block size 4 are constructed. The necessary conditions for the existence of a c‐BRD (υ,4,λ) are that: (1)λmin=?λ/3 ≤ c ≤ λ and (2a) c≡λ (mod 2), if υ > 4 or (2b) c≡ λ (mod 4), if υ = 4 or (2c) c≠ λ ? 2, if υ = 5. It is proved that these conditions are necessary, and are sufficient for most pairs of c and λ; in particular, they are sufficient whenever λ?c ≠ 2 for c > 0 and whenever c ? λmin≠ 2 for c < 0. For c < 0, the necessary conditions are sufficient for υ> 101; for the classic Bhaskar Rao designs, i.e., c = 0, we show the necessary conditions are sufficient with the possible exception of 0‐BRD (υ,4,2)'s for υ≡ 4 (mod 6). © 2002 Wiley Periodicals, Inc. J Combin Designs 10: 361–386, 2002; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/jcd.10009  相似文献   
186.
187.
Confined excitons in non-abrupt GaAs/AlxGa1−xAs single quantum wells are studied. The graded interfaces are described taking into account fluctuations in their thickness a and positioning with respect to the abrupt interface picture. Numerical results for confined (0,0),(1,1) and (0,2) excitons in GaAs/Al0.3Ga0.7As quantum wells show that while the interfacial fluctuations produce small changes (<0.5 meV) in the exciton binding energies, the confined exciton energies can be red- or blue-shifted as much as 25 meV for wells with mean width of 50 Å and 2 ML wide interfaces.  相似文献   
188.
189.
Using the COPHASE method and the GPS interferometry method for travelling ionospheric disturbances, we analyze in detail the spatio-temporal properties of travelling wave packets (TWP) of total electron content (TEC) disturbances. The analysis is performed on the example of a clearest TWP manifestation observed in California, USA, in October 18, 2001, using the GLOBDET technique, developed at the Institute of Solar-Terrestrial Physics of the Siberian Branch of RAS for global detection and monitoring of natural and technogenic ionospheric disturbances on the basis of TEC variations retrieved from the global network of GPS receivers. In the time domain, TWPs are quasi-periodic TEC oscillations of duration about 1 h, period of 10–20 min, and amplitude exceeding that of the background TEC fluctuations by at least one order of magnitude. The velocity and direction of TWP motion are similar to those of mid-latitude mesoscale travelling ionospheric disturbances, as obtained earlier from the analysis of phase parameters of HF radio signals and the signals of geostationary satellites and discrete space radio sources.  相似文献   
190.
We studied the voltage and temperature dependency of the dynamic conductance of normal metal-MgB2 junctions obtained either with the point-contact technique (with Au and Pt tips) or by making Ag-paint spots on the surface of MgB2 samples. The fit of the conductance curves with the generalized BTK model gives evidence of pure s-wave gap symmetry. The temperature dependency of the gap, measured in Ag-paint junctions (dirty limit), follows the standard BCS curve with 2Δ/kBTc=3.3. In out-of-plane, high-pressure point-contacts we obtained almost ideal Andreev reflection characteristics showing a single small s-wave gap Δ=2.6±0.2 meV (clean limit).  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号