Effect of progressive annealing on Silicon Nanostructures grown by Hot Wire Chemical Vapor Deposition

In this work, the evolution of Silicon Nanostructures with progressive annealing has been studied. Hot Wire CVD (HWCVD) process was used to deposit a Si_xN_y/a-Si structure on an n-type 〈100〉$〈100〉$ Silicon substrate with the Nitride acting as the buffer layer. The depositions were carried out at a low substrate temperature (250 °C) which is precisely why HWCVD was chosen over other processes for this work. The as-deposited sample was then annealed at 800 °C and 900 °C respectively. AFM studies revealed promising results hinting at the presence of Silicon Nanostructures. With progressive annealing the Nanostructures began to evolve, eventually turning into sharp Nanopillars upon annealing at 900 °C. In this paper, a growth model has been proposed which attempts to validate the experimental results. Though a lot of work is currently underway in this field, study of Silicon Nanostructures grown by HWCVD technique is relatively new.     

Effect of argon ion activity on the properties of Y2O3 thin films deposited by low pressure PACVD

Yttrium oxide thin films are deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition process using an indegeneously developed Y(thd)₃ {(2,2,6,6-tetramethyl-3,5-heptanedionate)yttrium} precursor. Depositions were carried out at two different argon gas flow rates keeping precursor and oxygen gas flow rate constant. The deposited coatings are characterized by X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (GIXRD) and infrared spectroscopy. Optical properties of the films are studied by spectroscopic ellipsometry. Hardness and elastic modulus of the films are measured by load depth sensing nanoindentation technique. Stability of the film and its adhesion with the substrate is inferred from the nanoscratch test.It is shown here that, the change in the argon gas flow rates changes the ionization of the gas in the microwave ECR plasma and imposes a drastic change in the characteristics like composition, structure as well as mechanical properties of the deposited film.     

Triple diffusive mixed convection flow in a duct using convective boundary conditions

The motivation of the current article is to explore a numerical investigation on steady triply diffusive convection in a vertical channel. Heat is exchanged from the external fluid with the plates. The reference temperature is taken as equal and also as different for the external fluid. Solutions in the absence of viscous dissipation and buoyancy forces are also obtained as special cases. General solutions including the effects of viscous dissipation and buoyancy forces are obtained analytically using the method of perturbation. The analytical solutions can be used only if the Brinkman number is small. Hence to know the flow properties for all values of Brinkman number, we resort to numerical solutions. The effects of thermal Grashof number, solutal Grashof number, and the chemical reaction parameter on the flow field are evaluated numerically. The obtained results are validated against previously published results for special case of the problems.     

Design and synthesis of novel chiral spiro ionic liquids

[reaction: see text] Novel chiral imidazolium salts have been synthesized as examples of chiral ionic liquids with a spiro skeleton. Effects of N-substituents and counteranions on the melting point of spiro imidazolium salts and their chiral discrimination abilities are described.     

Identification of nanoscale dissipation processes by dynamic atomic force microscopy

Identification of energy-dissipation processes at the nanoscale is demonstrated by using amplitude-modulation atomic force microscopy. The variation of the energy dissipated on a surface by a vibrating tip as a function of its oscillation amplitude has a shape that singles out the dissipative process occurring at the surface. The method is illustrated by calculating the energy-dissipation curves for surface energy hysteresis, long-range interfacial interactions and viscoelasticity. The method remains valid with independency of the amount of dissipated energy per cycle, from 0.1 to 50 eV. The agreement obtained between theory and experiments performed on silicon and polystyrene validates the method.     

High intrachain hole mobility on molecular wires of ladder-type poly(p-phenylenes)

We have studied the high-frequency (34 GHz) mobility of positive charge carriers on isolated ladder-type polymer chains in dilute solution. We find that the high-frequency mobility is limited by the chain ends on chains as long as 35 monomers. The intrachain motion of charge carriers can be described by one-dimensional diffusion between infinitely high reflecting barriers, representing the chain ends. Our data indicate that the intrachain mobility for ladder-type polymer chains is close to 600 cm(2)/V s. With this high mobility the ladder-type polymer is a promising candidate for future use as an interconnecting wire in molecular electronics.     

Laminar Heat Transfer Augmentation through A Square Duct and Circular Tube Fitted with Twisted Tapes

Experimental studies on friction factor and heat transfer characteristics for the laminar flow of ethylene glycol in a square duct fitted with twisted tapes of different twist ratios under nearly uniform wall temperature conditions are reported in this article. The Nusselt numbers were found to be 5.44–7.49 and 2.46–4.87 times that of plain square duct forced convection values based on constant flow rate and constant pumping power criteria, respectively, for y = 2.66. The augmented friction factor and Nusselt number for a square duct is about 1.9 and 2.10 times higher than that for an augmented circular tube.     

TDDFT Investigation of the Electronic Structures and Photophysical Properties of Fluorescent Extended Styryl Push-Pull Chromophores Containing Carbazole Unit

Push-pull chromophores attached to carbazole based π-conjugating spacers bearing N-alkylamino donors, cyanovinyl and carbethoxy acceptors have been studied by the means of UV-Visible measurements. The intramolecular charge transfer (ICT) of these π-conjugated systems has also been tested by investigating the ability of the solute molecules to undergo shifts in their fluorescence emission maxima with increasing solvent polarity. Density Functional Theory [B3LYP/6-31G(d)] and Time Dependent Density Functional Theory [TD-B3LYP/6-31G(d)] computations have been used to have more understanding of the structural, molecular, electronic and photophysical parameters of push-pull dyes. The largest wavelength difference between the experimental and computed electronic absorption maxima was 45 nm. For emission, a largest difference of 61 nm was observed. The ground state and excited state dipole moments in different solvents were determined using experimental solvatochromic data and computed Onsager radii. The dipole moments of the molecules in the excited state were observed to be higher than in the ground state.     

Band gap tunable and improved microstructure characteristics of Cu2ZnSn(S1−x,Sex)4 thin films by annealing under atmosphere containing S and Se

Cu₂ZnSn(S_xS_1?x)₄ (CZTSSe) thin films were prepared by annealing a stacked precursor prepared on Mo coated glass substrates by the sputtering technique. The stacked precursor thin films were prepared from Cu, SnS₂, and ZnS targets at room temperature with stacking orders of Cu/SnS₂/ZnS. The stacked precursor thin films were annealed using a tubular two zone furnace system under a mixed N₂ (95%) + H₂S (5%) + Se vaporization atmosphere at 580 °C for 2 h. The effects of different Se vaporization temperature from 250 °C to 500 °C on the structural, morphological, chemical, and optical properties of the CZTSSe thin films were investigated. X-ray diffraction patterns, Raman spectroscopy, and X-ray photoelectron spectroscopy results showed that the annealed thin films had a single kesterite crystal structure without a secondary phase. The 2θ angle position for the peaks from the (112) plane in the annealed thin films decreased with increasing Se vaporization temperature. Energy dispersive X-ray results showed that the presence of Se in annealed thin films increased from 0 at% to 42.7 at% with increasing Se vaporization temperatures. UV–VIS spectroscopy results showed that the absorption coefficient of all the annealed thin films was over 10⁴ cm^?1 and that the optical band gap energy decreased from 1.5 eV to 1.05 eV with increasing Se vaporization temperature.     

Polyvinylpyrrolidone (PVP) assisted single‐step synthesis of kesterite Cu2ZnSnS4 nanoparticles by solvothermal process

Quaternary kesterite‐type Cu₂ZnSnS₄ (CZTS) nanoparticles (NPs) were successfully synthesized by a single‐step solvothermal process. Semiconductor CZTS nanoparticles were obtained from ethylene glycol (EG) and CZTS precursor after solvothermal process at 180 °C for 30 h in polyvinylpyrrolidone (PVP) medium. The synthesized CZTS NPs were further annealed at 450 °C in nitrogen atmosphere and used for further characterizations. The CZTS NPs were characterized using X‐ray powder diffraction (XRD), field emission scanning electron microscopy (FESEM), micro Raman spectroscopy, high resolution transmission electron microscopy (HRTEM) and X‐ray photoelectron spectroscopy (XPS). The optical properties of the CZTS NPs were recorded by UV–vis absorption spectroscopy. The results showed that the synthesized CZTS nanoparticles are kesterite‐type CZTS, with good crystallinity and a stoichiometric composition. Moreover, the prepared nanoparticles have a size ranging from 5–7 nm and a band gap of ～1.5 eV.