Formation of p-type ZnO film on InP substrate by phosphor doping

ZnO thin film was initially deposited on InP substrate by radio frequency (rf) magnetron sputtering and the diffusion process was performed using the closed ampoule technique where Zn₃P₂ was used as the dopant source. To verify the junction formation of ZnO thin films, the electrical properties were measured, and the effects of Zn₃P₂ diffusion on ZnO thin films were investigated. It is observed that the electrical property of the film is changed from n-type to p-type by dopant diffusion effect. Based on the results, it is confirmed that ZnO thin films can be a potential candidate for ultraviolet (UV) optical devices.     

Brightness and decay time of Zn2SiO4:Mn phosphor particles with spherical shape and fine size

Green-light-emitting Zn₂SiO₄:Mn phosphor particles were synthesized by modified large-scale spray pyrolysis using a colloidal solution containing fumed silica particles. The particles had a fine size, filled morphology, spherical shape and non-aggregation characteristics even after post-treatment at 1150 °C. The luminescence characteristics of Zn₂SiO₄:Mn phosphor particles having spherical shape, such as brightness and decay time under VUV excitation light, were investigated as a function of Mn content. The luminescence intensity exhibits a maximum at 5 mol% Mn-doped powder. The decay time increases consistently with decreasing Mn content and more saturated color coordinates are obtained with the composition having 12 mol% Mn. As a consequence, the 10 mol% Mn-doped powder proved to provide a good combination of favorable luminance and acceptable decay time. The influence of post-treatment temperature on the decay time and photoluminescence characteristics of Zn₂SiO₄:Mn particles was also investigated. Particles post-treated at 1155 °C had the maximum photoluminescence intensity, which was identical to 113% that of the commercial product, and a comparable decay time of 5.8 ms. PACS 81.20.Rg; 78. 55.Hx; 78.40.Ha; 81.05.Hd; 81.40.Tv     

Electrochemical behavior of Li intercalation processes into a Li[NixLi(1/3−2x/3)Mn(2/3−x/3)]O2 cathode

Li[Ni_xLi_(1/3−2x/3)Mn_(2/3−x/3)]O₂ (X=0.17, 0.25, 0.33, 0.5) compounds are prepared by a simple combustion method. The Rietvelt analysis shows that these compounds could be classified as having the α-NaFeO₂ structure. The initial charge-discharge and irreversible capacity increases with the decrease of x in Li[Ni_xLi_(1/3−2x/3)Mn_(2/3−x/3)]O₂. Indeed, Li[Ni_0.50Mn_0.50]O₂ compound shows relatively low initial discharge capacity of 200 mAh/g and large capacity loss during cycling, with Li[Ni_0.17Li_0.22Mn_0.61]O₂ and Li[Ni_0.25Li_0.17Mn₀.₅₈]O₂ compounds exhibit high initial discharge capacity over 245 mAh/g and stable cycle performance in the voltage range of 4.8 -2.0 V. On the other hand, XANES analysis shows that the oxidation state of Ni ion reversibly changes between Ni²⁺ and about Ni³⁺, while the oxidation state of Mn ion sustains Mn⁴⁺ during charge-discharge process. This result does not agree with the previously reported ‘electrochemistry model’ of Li[Ni_xLi_(1/3−2x/3)Mn_(2/3−x/3)]O₂, in which Ni ion changes between Ni²⁺ and NI⁴⁺. Based on these results, we modified oxidation-state change of Mn and Ni ion during charge-discharge process.     

Hyers-Ulam-Rassias stability of homomorphisms in quasi-Banach algebras associated to the Pexiderized Cauchy functional equation

In this paper, we prove the Hyers-Ulam-Rassias stability of homomorphisms in quasi-Banach algebras associated to the Pexiderized Cauchy functional equation. This is applied to investigate homomorphisms between quasi-Banach algebras. The concept of Hyers-Ulam-Rassias stability originated from Th.M. Rassias' stability theorem that appeared in his paper [Th.M. Rassias, On the stability of the linear mapping in Banach spaces, Proc. Amer. Math. Soc. 72 (1978) 297-300].     

Growth properties of Sobolev space functions over unbounded domains

Summary We study Sobolev space functions with prescribed growth properties on large spheres. In particular, we prove a weighted Poincaré type inequality for such functions. An extension to weighted Sobolev spaces is sketched.

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Sunto Si studiano funzioni che appartengono a certi spazi di Sobolev e che hanno crescita assegnata su sfere di grande raggio. Per tali funzioni si dimostra una disuguaglianza di tipo Poincaré con peso. Si indica inoltre anche una estensione di tale risultato a funzioni in spazi di Sobolev con peso.

     

Emission and sputtering characteristics of Ne-Ar mixed gas glow discharge plasmas.

The emission characteristics of several Cu lines emitted from a Ne-Ar mixed gas glow discharge plasma were investigated. The addition of small amounts of Ar to a Ne plasma increases the sputtering rate of a Cu sample because Ar ions, which work as the impinging ions for cathode sputtering, are predominantly produced through Penning ionization collisions between Ne metastables and Ar atoms. Ar addition also elevates the number density of electrons in the plasma. These changes occurring in the Ne-Ar mixed gas plasma result in enhanced emission intensities of the Cu lines. The Cu II 270.10-nm and the Cu II 224.70-nm lines yield different intensity dependence on the Ar partial pressure added. This phenomenon is because these Cu II lines are excited principally through different charge transfer processes: collisions with Ne ions for the Cu II 270.10-nm line and collisions with Ar ions for the Cu II 224.70-nm line. The shape of sputtered craters in the Ne-Ar glow discharge plasma was measured. The depth resolution was improved when Ar was added to a Ne plasma because the crater bottoms were flatter with larger Ar partial pressures.     

Dual effects of fullerene doped to holographic polymer dispersed liquid crystals

Doping of conductive fullerene particles to the formulation of conventional holographic polymer dispersed liquid crystal‐induced dual effects of reducing both droplet coalescence and operating voltage. Fullerene induced an induction period which otherwise does not exist, followed by a gradual increase of diffraction efficiency to a saturation value being increased with increasing fullerene content. The increased diffraction efficiency was caused by the decreased droplet coalescence which was due to the hindered migration of LC by the fullerene particles. On the other hand, doped fullerene particles augmented the conductivity of polymer phase and hence the local electrical field imposed on LC droplet, which overcome the threshold for driving and reduced operating voltage and response times. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 5590–5596, 2007     

Angular and NiFe thickness dependence of exchange bias in IrMn/NiFe/IrMn thin film

Exchange biased IrMn/NiFe/IrMn thin films were studied as a function of NiFe thickness. In plane angular dependence of a resonance field distribution which is measured by FMR was analyzed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. The unidirectional anisotropic field and the uniaxial anisotropic field were linearly varied with NiFe thickness while the films with a thicker NiFe layer do not follow the linear variation. Resonance field and linewidth variations were also analysed with NiFe thickness.