固液混合装药热传导特性对其安全性影响的计算研究

固液混合装药物理参数是影响装药安全性的主要因素之一,利用混合炸药计算物理参数的方法,计算了几种典型配比装药的物理参数,根据能量守恒方程对不同物理参数的装药进行数值模拟。计算得到:在温度载荷相同的条件下,不同的物理参数对其温度响应有较大的差别,说明分析固液混合装药安全性时,应考虑装药不同比例对其安全性的影响,才能真实反应热点能量演化过程,为分析固液混合装药的安全性提供一定的理论依据。     

Sulfur speciation in two typical soil samples using X-ray absorption near-edge structure spectroscopy and chemical fractionation

Sulfur K-edge X-ray absorption near-edge structure spectroscopy and chemical sequential extraction was respectively used to study the speciation of sulfur in two sulfur-rich soils samples. Sulfur K-edge X-ray absorption near-edge structure spectroscopy analysis obtained a variety of spectra. Spectral fitting of the X-ray absorption near-edge structure spectra utilizing a large set of model compounds showed great differences between these two sulfur-rich soil samples. It was found that both of the soil samples had high sulfur content (8.40 and 11.57?g?kg^?1, respectively). Chemical extraction results suggested that sulfur mainly existed as organic in the ancient paddy soil (7.37?g?kg^?1) and more reduced sulfur was identified in it. X-ray absorption near-edge structure spectroscopy also got similar results. These organic forms of sulfur existed in organic matter across a range of oxidation states. There was high proportion of oxidized sulfur in the sulfuric acid plant that mainly existed as sulfate.     

电子在蛋白质分子中的迁移机理及其特性

ATP水解作用所释放的能量能引起蛋白质分子中额外电子的激发,其激发与氨基酸残基晶格畸变相互作用,使额外电子自陷成孤子,这孤子在附着有供体(D)和受体(A)的蛋白质分子中运动时,由于孤子与供体电子的相互作用而"自局域"在孤子上进行迁移,从而可把电子供给受体.使用作者提出的孤子理论研究了这种迁移的特征,计算了在这种非平衡态过程中由孤子迁移电子的速率和动能系数,得到了一些有趣的结果,揭示了这种迁移的本质,求得了迁移的大小.     

Mild Hydrothermal Synthesis, Characterization and Properties of Na_5Ce(PO_4)_3, Na_3Yb_2(PO_4)_3·H_2O and Na_(5-2x)Yb_2xCe_(1-x)(PO_4)_3·yH_2O

IntroductionRare earth phosphates have been widely studied due to their important properties and potential technological application. The early studies of cerium phosphates focused on their inter..esting ion exchange properties, and a series of such compounds was prepared['--']. Rare earthorthophosphates are also regarded as promising phosphors for fluorescent tubes because oftheir luminescence properties["']. Since crystal NdP,O,. was discovered to have efficient laseremi.sion[6'7), the pol…     

米兰花化学成分的GC-MS分析

采用超声波提取米兰花.然后对其化学成分进行GC-MS分析.从米兰花中分离确定了27种主要成分,其中萜类物质含量相对较高.     

CdS/TiO2/漂珠复合光催化剂制备及其降解高效氯氰菊酯研究

采用溶胶-凝胶-浸渍法制备了Cds/TiO2/漂珠复合光催化剂,通过SEM,XRD对其结构进行了表征.以高效氯氰菊酯(BEC)杀虫剂的光催化降解为模型反应,研究了CdS/TiO2/漂珠的光催化性能,探讨了影响催化剂活性的因素及采用太阳光作光源处理BEC的可行性.结果表明,CdS/TiO2/漂珠投加量为3 000mg·L-1,初始浓度为45 mg·L-1、初始pH为6.5,通气量为200 mL·min-1时间为60 min,BEC降解率分别为92.1%(125W高压汞灯)和79.3%(5 W紫外灯),采用太阳光照射300 min,BEC降解率可达93.4%.BEC的降解反应遵从L-H动力学模型,测得反应速率常数9.80 mg·(L·min)-1,吸附常数4.36×10-3 L·mg-1.     

An All-Solid-State Tunable Dual-Wavelength Ti：Sapphire Laser with Quasi-Continuous-Wave Outputs

A high power dual-wavelength Ti：sapphire laser system with wide turning range and high efficiency is described, which consists of two prism-dispersed resonators pumped by an a11-solid-state frequency-doubled Nd：YAG laser. Tunable dual-wavelength outputs, with one wavelength range from 750nm to 795nm and the other from 80Ohm to 850nm, have been demonstrated. With a pump power of 23 W at 532nm, a repetition rate of 6.5kHz and a pulse width of 67.6ns, the maximum dual-wavelength output power of 5.6 W at 785.3nm and 812.1 run, with a pulse width of 17.2ns and a line width of 2nm, has been achieved, leading to an optical-to-optical conversion efficiency of 24.4%.     

Electronic Structures of Wurtzite GaN with Ga and N Vacancies

The electronic band structures of wurtzite GaN with Ga and N vacancy defects are investigated by means of the first-principles total energy calculations in the neutral charge state. Our results show that the band structures can be significantly modified by the Ga and N vacancies in the GaN samples. Generally, the width of the valence band is reduced and the band gap is enlarged. The defect-induced bands can be introduced in the band gap of GMV due to the Ga and N vacancies. Moreover, the GaN with high density of N vacancies becomes an indirect gap semiconductor. Three defect bands due to Ga vacancy defects are created within the band gap and near the top of the valence band. In contrast, the N vacancies introduce four defect bands within the band gap. One is in the vicinity of the top of the valence band, and the others are near the bottom of the conduction band. The physical origin of the defect bands and modification of the band structures due to the Ga and N vacancies are analysed in depth.     

Single-Proton Pickup Reaction of the Halo Nucleus ^6He on a ^9Be Target at 25 MeV/nucleon

The inclusive differential cross sections of the ^7 Li nucleus in a reaction induced by ^6He on a ^9Be target are measured at an incident energy of 25 MeV/nucleon. Finite-range distorted-wave Born approximation calculations suggest that these ^7 Li particles are formed in a direct single-proton pickup reaction ^9Be（^6He,^7 Li）^8Li. The experimental data can be well reproduced by taking into account of the contributions of both the ground states and the first excited states of ^7Li and ^8Li.