High speed and wide temperature range uncooled 1.3-μm ridge waveguide DFB lasers

A 1.3-μm wavelength vertical-mesa ridge waveguide mulitple-quantum-well （MQW） distributed feedback （DFB） laser with high directly modulated bandwidth and wide operation temperature range is reported. With the optimization of the strained-layer MQWs in the active region, the surrounding graded-index separated-confinement-heterostructure waveguide layers, together with the optimization of the detuning and coupling coefficient of the DFB grating, high directly modulation bandwidth of 16 GHz at room temperature and wide working temperature range from -40 to 85 ℃ are obtained. The mean time to failure （MTTF） is estimated to be over 2×10^6 h. The device is suitable as light source of high-bit-rate optical transmitters with small size and reduced cost.     

Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers

The optical properties of InGaN multi-quantum-well laser diodes with different polarization-matched AlInGaN barrier layers have been investigated numerically by employing an advanced device simulation program. The use of quaternary polarization-matched AlInGaN barrier layers enhances the electron–hole wave function overlap due to the compensation of polarization charges between InGaN quantum well and AlInGaN barrier layer. According to the simulation results, it is found that, among the polarization-matched quantum-well structures under study, lower threshold current and higher slope efficiency can be achieved simultaneously when the aluminum composition in AlInGaN barrier layers is about 10–15%. The optimal polarization-matched InGaN/AlInGaN laser diode shows lower threshold current and higher slope efficiency compared to conventional InGaN/InGaN laser diodes.     

一种实现光子晶体波导定向耦合型多路光均分的新方法

将多光子晶体单模波导平行、邻近放置构成定向耦合器. 依据自映像原理,数值分析了输入光场对称入射时,该系统中光的传播行为. 基于此结构,以三、四通道为例,设计了超微多路光分束器,并仅通过对称地改变耦合区中两个介质柱的有效折射率,使光场在横向发生重新分布,实现了输出能量的均分或自由分配. 和已报道结果相比,此调制方法更为简单易行而且效率更高,并可以推广到具有更多输出通道的光分束器中,在未来的集成光回路中具有广泛的应用价值. 关键词： 光子晶体波导 定向耦合器 分束器 能量均分     

基于半导体光放大器的一阶IIR微波光子学滤波器及其品质因素分析

对基于半导体光放大器(SOA)环形腔结构的一阶无限冲击响应(IIR)微波光子学滤波器的品质因数(Q值)进行了实验和理论研究. 通过在有源环内置入窄带光滤波器,并调节有源环的输入光功率、SOA抽运电流、实验得到的最高Q值接近200. 理论分析表明为了得到较高的Q值,应尽可能提高信噪比和信号光的环路增益. 在考虑了 SOA中放大的自发辐射(ASE)噪声的基础上,计算了输入光功率、SOA抽运电流、环内光滤波器的带宽对Q值的影响. 数值计算的结果与实验现象基 关键词： 微波光子学滤波器 Q值')" href="#">Q值 半导体光放大器 放大的自发辐射     

信号灯和公交车站对T形路口交通流的影响研究

采用非线性映射模型研究T形路口的交通问题,利用点平均流量指标系统地分析了公交车站、信号灯周期、绿信比、车辆左右转弯等因素对路径交通流量的影响.数值模拟结果表明,信号灯和公交车站之间的相互影响容易导致交通流的串现象,不同路径上的流量与信号灯周期、绿信比和公交车站位置之间存在一定的关系. 关键词： 交通流 非线性映射模型 信号控制 串     

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Recently GaN-based high electron mobility transistors (HEMTs) have revealed the superior properties of a high breakdown field and high electron saturation velocity. Reduction of the gate leakage current is one of the key issues to be solved for their further improvement. This paper reports that an Al layer as thin as 3 nm was inserted between the conventional Ni/Au Schottky contact and n-GaN epilayers, and the Schottky behaviour of Al/Ni/Au contact was investigated under various annealing conditions by current--voltage (I--V) measurements. A non-linear fitting method was used to extract the contact parameters from the I--V characteristic curves. Experimental results indicate that reduction of the gate leakage current by as much as four orders of magnitude was successfully recorded by thermal annealing. And high quality Schottky contact with a barrier height of 0.875 eV and the lowest reverse-bias leakage current, respectively, can be obtained under 12 min annealing at 450°C in N₂ ambience.     

半导体光放大器超快折射率变化动态特性的研究

建立了分析半导体光放大器（SOA）飞秒量级超快动态特性的数值模型,考虑了增益色散以及群速度色散,能更精确地反映飞秒级超短脉冲经过SOA时的传输特性.基于该模型,可以分析由载流子密度脉动以及载流子加热对折射率变化的影响.同时,也考虑了不同的工作条件以及SOA的结构参数对折射率的影响.理论分析和模拟实验为优化SOA的结构、改善SOA飞秒量级超高速动态特性提供了理论指导. 关键词： 半导体光放大器 折射率动态特性 增益色散 群速度色散     

聚龙一号装置上首次铝套筒Z箍缩X射线背光照相实验

在聚龙一号脉冲功率装置上首次完成了对带正弦扰动铝套筒Z箍缩的X射线背光照相实验。实验采用千焦耳激光器（1053 nm, 1 kJ, 1 ns）驱动固体靶材产生X射线, 然后利用基于球面晶体的单色背光照相技术以及直接点投影背光照相技术, 成功观测到约7.5 MA电流驱动条件下, Z箍缩铝套筒的外边界不稳定性发展情况。该实验验证了在聚龙一号装置上联合千焦耳激光器开展X射线背光照相实验的能力, 为后续精密Z箍缩物理研究奠定了基础。     

激光加载下铝材料的冲击温度测量

利用神光Ⅱ装置上搭建的用于激光冲击波实验的温度诊断系统（该系统包括高时空分辨的扫描高温计和谱时分辨的扫描高温计）,以强激光加载铝材料冲击温度的测量,获得了铝材料冲击高温辐射发光谱的高时空分辨信号图像,结合灰体辐射理论模型,计算得到了冲击波速度19.06 km/s时铝材料的冲击温度达2.95 eV,该温度与SESAME库中冲击温度接近。研究结果表明采用该测温系统能够有效诊断金属材料的冲击温度,为后续进一步获取金属材料冲击温度数据奠定了基础。