TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN]
n multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two
series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N
2 processing pressure with varied N
2 partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases
in the films from metallic
bcc Ta to a mixture of
bcc Ta(N) and hexagonal Ta
2N, then sequentially to
fcc TaN and a mixture of TaN with N-rich phases when the N
2 partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the
preferred crystalline orientation of the films from
bcc Ta [100] to [110], then to random and finally to
fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like
behavior in the range of 77–295 K. The films showed a typical polycrystalline textured structure with small, crystallized
domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous
regions were observed in the film. TaN film with [111]-preferred orientation and a resistivity of 6.0 mΩ cm was obtained at
25% N
2 partial pressure, which may be suitable for the interlayer in [FeN/TaN]
n multilayers.
Received: 6 December 1999 / Accepted: 24 July 2000 / Published online: 9 November 2000
相似文献