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133.
The influence of wall heat loss on the emission characteristics of ammonia-air swirling flames has been investigated employing Planar Laser-Induced Fluorescence imaging of OH radicals and Fourier Transform Infrared spectrometry of the exhaust gases in combustors with insulated and uninsulated walls over a range of equivalence ratios, ?, and pressures up to 0.5 MPa. Strong influence of wall heat loss on the flames led to quenching of the flame front near the combustor wall at 0.1 MPa, resulting in large unburned NH3 emissions, and inhibited the stabilization of flames in the outer recirculating zone (ORZ). A decrease in heat loss effects with an increase in pressure promoted extension of the fuel-rich stabilization limit owing to increased recirculation of H2 from NH3 decomposition in the ORZ. The influence of wall heat loss resulted in emission trends that contradict already reported trends in literature. NO emissions were found to be substantially low while unburned NH3 and N2O emissions were high at fuel-lean conditions during single-stage combustion, with values such as 55 ppmv of NO, 580 ppmv of N2O and 4457 ppmv of NH3 at ? = 0.8. In addition, the response of the flame to wall heat loss as pressure increased was more important than the effects of pressure on fuel-NO emission, thereby leading to an increase in NO emission with pressure. It was found that a reduction in wall heat loss or a sufficiently long fluid residence time in the primary combustion zone is necessary for efficient control of NH3 and N2O emissions in two-stage rich-lean ammonia combustors, the latter being more effective for N2O in addition to NO control. This study demonstrates that the influence of wall heat loss should not be ignored in emissions measurements in NH3-air combustion, and also advances the understanding of previous studies on ammonia micro gas turbines.  相似文献   
134.
The constitution of the ternary system Ni/Si/Ti is investigated over the entire composition range using X‐ray diffraction (XRD), energy dispersive X‐ray spectroscopy (EDS), differential thermal analysis (DTA), and metallography. The solid state phase equilibria are determined for 900 °C. Eight ternary phases are found to be stable. The crystal structures for the phases τ1NiSiTi, τ2Ni4Si7Ti4, τ3Ni40Si31Ti13, τ4Ni17Si7Ti6, and τ5Ni3SiTi2 are corroborated. For the remaining phases the compositions are determined as Ni6Si41Ti536), Ni16Si42Ti427), and Ni12Si45Ti438). The reaction scheme linking the solid state equilibria with the liquidus surface is amended to account for these newly observed phases. The discrepancies between previous experimental conclusions and modeling results are addressed. The liquidus surface is dominated by the primary crystallisation field of τ1NiSiTi, the only congruently melting phase.  相似文献   
135.
In order to prevent the spontaneous ignition of nitrocellulose (NC), NC is stabilized by washing with industrial water in its synthesis process. However, there is a possibility that the components in industrial water contribute to the thermal stability of NC. In this way, the purpose of this study is to clarify the effect of industrial water components on the thermal stability of NC. In experiments, a heat flux calorimeter was used to observe the thermal behavior of NC with the residue of vaporized industrial water. The induction period of heat release of NC with 2-mass% residues was approximately 2–5 h shorter than that of NC alone whose induction period was observed at 7 h. Those results indicate that the residue destabilized NC. On the other hand, when the additive amount of the residue was increased, the induction period gradually increased as well. Based upon these results, we assume that inorganic salts contributing to stabilization and destabilization competitively coexist in the industrial water components. The same thermal analysis was performed on NC with CaCO3, CaSO4, CaCl, ZnSO4, NaCl, and CuCl. Those salts are predicted to exist in the industrial water. In the results, the induction period of NC with 2-mass% CaCO3 was approximately 15-h longer than that of NC alone, while the induction period with the inorganic salts CaSO4, CaCl, ZnSO4, NaCl, and CuCl was 4–5-h shorter. Therefore, when the industrial water components accumulate in NC, the destabilization by inorganic salts such as CaSO4, CaCl, ZnSO4, NaCl, and CuCl and the stabilization by compounds such as CaCO3 are thought to countervail against each other.  相似文献   
136.
A new class of 1,3-diphoshacyclobutane-2,4-diyls bearing alkylsulfanyl or arylsulfanyl groups together with the sterically demanding Mes* groups have been prepared as air-stable compounds.
  相似文献   
137.

Abstract  

The crystal structure of the 2:1 co-crystal of 1,2,5-thiadiazole-3,4-dicarboxylic acid and 4,4′-bipyridine, (C4H2N2O4S)2·C10H8N2, has been determined by X-ray diffraction at the monoclinic space group C2/c with cell parameters of a = 21.388(7) ?, b = 6.735(2) ?, c = 14.877(5) ?, β = 110.431(3)°, and Z = 4. There are one molecule of thiadiazole and a half molecule of bipyridine in the asymmetric unit. The dihedral angle between the pyridine ring planes is 40.5(3)°. Two intramolecular O–H···N [2.730(7) ?] and O–H···O [2.433(6) ?] hydrogen bonds are observed in the thiadiazole molecule. In the crystal structure, the molecules form a unique two-dimensional ladder-type network linked by intermolecular O–H···N [2.704(4) ?] hydrogen bonds and S···O [3.100(5) ?] heteroatom interactions.  相似文献   
138.
The various dissociation thresholds of phenol(+)···Ar(3) complexes for the consecutive loss of all three Ar ligands were measured in a molecular beam using resonant photoionization efficiency and mass analyzed threshold ionization spectroscopy via excitation of the first excited singlet state (S(1)). The adiabatic ionization energy is derived as 68077 ± 15 cm(-1). The analysis of the dissociation thresholds demonstrate that all three Ar ligands in the neutral phenol···Ar(3) tetramer are attached to the aromatic ring via π-bonding, denoted phenol···Ar(3)(3π). The value of the dissociation threshold for the loss of one Ar ligand from phenol(+)···Ar(3)(3π), ~190 cm(-1), is significantly lower than the binding energy measured for the π-bonded Ar ligand in the phenol(+)···Ar(π) dimer, D(0) = 535 ± 3 cm(-1). This difference is rationalized by an ionization-induced π → H isomerization process occurring prior to dissociation, that is, one Ar atom in phenol(+)···Ar(3)(3π) moves to the OH binding site, leading to a structure with one H-bonded and 2 π-bonded ligands, denoted phenol(+)···Ar(3)(H/2π). The dissociation thresholds for the loss of two and three Ar atoms are also reported as 860 and 1730 cm(-1). From these values, the binding energy of the H-bound Ar atom can be estimated as 870 cm(-1).  相似文献   
139.
The surface structure of a single-crystal ZnO wafer was studied by angle-resolved x-ray photoelectron spectroscopy (ARXPS) using synchrotron radiation. As a result, well-defined x-ray photoelectron diffraction (XPD) patterns were obtained for the (0001) and (0001¯) polar surfaces using the photoemission from the Zn 2p3/2 and O 1s core levels. The XPD patterns were indexed assuming forward scattering of photoelectrons by neighboring ions. Further, the XPD patterns for the (0001) and (0001¯) surfaces were different from each other, indicating the possibility for using the XPD technique for polarity determination.  相似文献   
140.
We report on the formation mechanism of element distribution in glass under high-repetition-rate femtosecond laser irradiation. We simultaneously focused two beams of femtosecond laser pulses inside a glass and confirmed the formation of characteristically shaped element distributions. The results of the numerical simulation in which we considered concentration- and temperature-gradient-driven diffusions were in excellent qualitative agreement with the experimental results, indicating that the main driving force is the sharp temperature gradient. Since the composition of a glass affects its refractive index, absorption, and luminescence property, the results in this study provide a framework to fabricate a functional optical device such as optical circuits with a high-repetition-rate femtosecond laser.  相似文献   
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