Synthesis of silyl aziridines and alpha-amino acylsilanes with silyldibromomethyllithium

The reaction of silyldibromomethyllithium with aromatic imines provides alpha-amino acylsilanes via a bromo aziridine intermediate upon quenching the reaction with water. Alternatively, treatment of the bromo aziridine intermediate with various Grignard reagents or lithium aluminum hydride permits the nucleophilic displacement of the halogen to furnish substituted silyl aziridines.     

Regio-selective cyanation of (Z)-(1,2-dibromo-2-arylvinyl)triisopropylsilane with suppression of halogen elimination

Highly regio-selective cyanation of vicinal (Z)-dibromoalkenyl silanes was achieved by a vinylic Rosenmund-von Braun reaction, significantly suppressing side-production of alkyne. The alkyne was generated by a halogen elimination side-reaction that is an intrinsic problem in metal-activation of vicinal dihaloalkenes. We have studied to overcome the problem, and finally found the combination of CuCN and O = PPh₃ in toluene solvent effectively controlled the production of byproducts. The resultant single isomer has significance in potentially application as a multi-tunable synthetic scaffold.     

Theoretical study of the mechanism of valence tautomerism in cobalt complexes

Valence tautomerism is studied in the [Co(II-HS)(sq)(2)(bpy)]/[Co(III-LS)(sq)(cat)(bpy)] mononuclear cobalt complex by using DFT methods (HS, high spin; LS, low spin; cat, catecholate; sq, semiquinone; bpy, 2,2'-bipyridine). Calculations at the B3LYP* level of theory reproduce well the energy gap between the Co(II-HS) and Co(III-LS) forms giving an energy gap of 4.4 kcal/mol, which is comparable to the experimental value of 8.9 kcal/mol. Potential energy surfaces and crossing seams of the electronic states of the doublet, quartet, and sextet spin states are calculated along minimum energy paths connecting the energy minima corresponding to the different spin states. The calculated minimum energy crossing points (MECPs) are located at 8.8 kcal/mol in the doublet/sextet surfaces, at 10.2 kcal/mol in the doublet/quartet surfaces, and at 8.4 kcal/mol in the quartet/sextet surfaces relative to the doublet ground state. Considering the energy of the three spin states and the crossing points, the one-step relaxation mechanism between the Co(II-HS) and Co(III-LS) forms is the most probable. This research shows that mapping MECPs can be a useful strategy to analyze the potential energy surfaces of systems with complex deformation modes.     

Energy transfer between excitons and plasmons in semiconductor-metal hybrid nanostructures

We summarized our recent optical studies on semiconductor nanoparticle (NP) based hybrid nanostructures: isolated CdSe NPs on Au substrates, close-packed CdSe NP monolayers on Au substrates, and close-packed monolayers of mixed CdSe/Au NPs. Luminescence properties of semiconductor-metal hybrid nanostructures were studied by space-resolved optical imaging spectroscopy and time-resolved luminescence spectroscopy. The luminescence spectra and dynamics of isolated and assembled NPs depend on the local environments. We discuss exciton-plasmon interactions in semiconductor-metal hybrid nanostructures.     

Observation of charged excitons in hole-doped carbon nanotubes using photoluminescence and absorption spectroscopy

We report the first observation of trions (charged excitons), three-particle bound states consisting of one electron and two holes, in hole-doped carbon nanotubes at room temperature. When p-type dopants are added to carbon nanotube solutions, the photoluminescence and absorption peaks of the trions appear far below the E11 bright exciton peak, regardless of the dopant species. The unexpectedly large energy separation between the bright excitons and the trions is attributed to the strong electron-hole exchange interaction in carbon nanotubes.     

Dependence of photoluminescence of CdSe/ZnS on excitation wavelength

We have found that the photoluminescence (PL) intensity of CdSe/ZnS nanocrystals placed on a thin film of insulator (GaAsOx/GaAs) depends on excitation wavelength through the interference effects of the excitation light. By employing the multi-reflection/interference calculation, the insulator thickness of the underlying non-uniform patterns can be evaluated by the simple observation of CdSe/ZnS PL with a couple of excitation wavelengths. Moreover, the differences observed for the temporal evolution of CdSe/ZnS PL (blue shifts and degradation) among the excitation wavelengths suggest that the photo-induced changes of chemical composition and surface ligands are responsible for blue shifts and degradation, respectively.