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51.
The equilibrated grain boundary groove shapes for solid Bi solution (Bi–6.1 at.%Zn–0.38 at.%Al) in equilibrium with the Bi–Al–Zn eutectic liquid have been observed from quenched sample with a radial heat flow apparatus. The Gibbs–Thomson coefficient, solid–liquid interfacial energy and grain boundary energy of solid Bi solution have been determined from the observed grain boundary groove shapes. The variations of thermal conductivity with temperature for solid Bi solution (Bi–6.1 at.%Zn–0.38 at.%Al) has been measured up to five degree below the melting temperature by using radial heat flow technique. The ratio of thermal conductivity of equilibrated Bi–Al–Zn eutectic liquid phase to solid Bi solution (Bi–6.1 at.%Zn–0.38 at.%Al) phase has also been measured with a Bridgman type growth apparatus at the melting temperature.  相似文献   
52.
In this work, the investigation of the interface states density and series resistance from capacitance–voltage (CV) and conductance–voltage (GV) characteristics in Au/SnO2/n-Si (MOS) structures prepared at various SnO2 layer thicknesses by spray deposition technique have been reported. It is fabricated five samples depending on deposition time. The thicknesses of SnO2 films obtained from the measurement of the oxide capacitance in the strong accumulation region for MOS Schottky diodes are 37, 79, 274, 401, and 446 Å, for D1, D2, D3, D4, and D5 samples, respectively. The CV and GV measurements of Au/SnO2/n-Si MOS structures are performed in the voltage range from −6 to +10 V and the frequency range from 500 Hz to 10 MHz at room temperature. It is observed that peaks in the forward CV characteristics appeared because of the series resistance. It has been seen that the value of the series resistance Rs of samples D1 (47 Ω), D2 (64 Ω), D3 (98 Ω), D4 (151 Ω), and D5 (163 Ω) increases with increasing the oxide layer thickness. The interface state density Dit ranges from 2.40×1013 cm−2 eV−1 for D1 sample to 2.73×1012 cm−2 eV−1 for D5 sample and increases with increasing the oxide layer thickness.  相似文献   
53.
In this paper we investigate the Cauchy problem for a fractional diffusion equation and the time-fractional derivative is taken in the Caputo type sense. We give a representation of solutions under Fourier series and analyze initial value problems for the semi-linear fractional diffusion equation with a memory term. We also discuss the stability of the fractional derivative order for the time under some assumptions on the input data. Our key idea is to use Mittag-Leffler functions, the Banach fixed point theorem, and some Sobolev embeddings.  相似文献   
54.
The single crystal X-ray diffraction analysis of the title compound, C14H20N2O3, reveals that the structure is adapted to its zwitterionic form and centrosymmetric dimers are formed by N+–H···O type ionic weak hydrogen bonds in the crystal structure. The title compound crystallizes in the triclinic space group P−1 with a = 5.9255(13) ?, b = 9.853(3) ?, c = 12.248(3) ?, α = 101.793(19)°, β = 94.941(17)°, γ = 104.36(2)°, Z = 2, Dx = 1.308 g/cm3, μ (Mo-Kα) = 0.092 mm−1. The structure was solved by direct methods and refined to a final R = 0.0371 for 2183 reflections with I > 2σ (I). The crystal structure is stabilized by N+–H···O type intra-molecular hydrogen bonds and N+–H···O type packing interactions referred to as weak hydrogen bonds. To elucidate conformational flexibility of the title molecule, the selected torsion angle is varied from −180° to +180° in every 10° separately and then molecular energy profile is calculated and construed. In addition, charge-population analysis of the crystallographically observed structure confirms its zwitterionic form.  相似文献   
55.
A metal/interlayer/semiconductor (Al/enzyme/p-Si) MIS device was fabricated using α-amylase enzyme as a thin biofilm interlayer. It was observed that the device showed an excellent rectifying behavior and the barrier height value of 0.78?eV for Al/α-amylase/p-Si was meaningfully larger than the one of 0.58?eV for conventional Al/p-Si metal/semiconductor (MS) contact. Enhancement of the interfacial potential barrier of Al/p-Si MS diode was realized using enzyme interlayer by influencing the space charge region of Si semiconductor. The electrical properties of the structure were executed by the help of current–voltage and capacitance–voltage measurements. The photovoltaic properties of the structure were executed under a solar simulator with AM1.5 global filter between 40 and 100?mW/cm2 illumination conditions. It was also reported that the α-amylase enzyme produced from Bacillus licheniformis had a 3.65?eV band gap value obtained from optical method.  相似文献   
56.
In this work, 3,4-bis(isoproylamino)cyclobut-3-ene-1,2-dione C(10)H(16)N(2)O(2) (I), was synthesized and characterized by (13)C NMR, (1)H NMR, FT-IR, UV-vis spectroscopy and single-crystal X-ray diffraction. DFT method with 6-31G(d,p) basis set has been used to calculate the optimized geometrical parameters, atomic charges, vibrational frequencies and chemical shift values. The calculated vibrational frequencies and chemical shift values are compared with experimental FT-IR and NMR spectra. The results of the calculation shows good agreement between experimental and calculated values of the compound I. The existence of N-H?O type intermolecular ve C-H?O type intramolecular hydrogen bonds can be deduced from differences between experimental and calculated results of FT-IR and NMR. In addition, the molecular electrostatic potential map and frontier molecular orbitals and electronic absorption spectra were performed at B3LYP/6-31G(d,p) level of theory. HOMO-LUMO electronic transition of 4.90 eV are derived from the contribution of the bands π→π* and n→π* The spectral results obtained from FT-IR, NMR and X-ray of I revealed that the compound I is in predominantly enamine tautomeric form, which was supported by DFT calculations.  相似文献   
57.
The equilibrated grain boundary groove shapes for solid Zn solution (Zn-3.0 at.% Al-0.3 at.% Bi) in equilibrium with the Zn-Al-Bi eutectic liquid (Zn-12.7 at.% Al-1.6 at.% Bi) have been observed from quenched sample with a radial heat flow apparatus. Gibbs-Thomson coefficient, solid-liquid interfacial energy and grain boundary energy for solid Zn solution in equilibrium with Al-Bi-Zn eutectic liquid have been determined to be (5.1 ± 0.4) × 10−8 K m, (80.1 ± 9.6) × 10−3 and (158.6 ± 20.6) × 10−3 J m−2 from the observed grain boundary groove shapes, respectively. The thermal conductivity variation with temperature for solid Zn solution has been measure with radial heat flow apparatus and the value of thermal conductivity for solid Zn solution has been determined to be 135.68 W/km at the eutectic melting temperature. The thermal conductivity ratio of equilibrated eutectic liquid to solid Zn solution, R = KL(Zn)/KS(Zn) has also been measured to be 0.85 with Bridgman type solidification apparatus.  相似文献   
58.
The molecular and crystal structures of the title compound, C19H18N2O, were determined and characterized by single crystal X-ray diffraction and spectroscopic methods. Details of the molecular geometry imply that there is a mesomeric effect between the electron-withdrawing N atoms of nitrile substituents and electron-donating O atom. Formally, single central O–Car bond lengths are considerably different from each other. O–Car distance to phthalonitrile ring is shorter than the other O–Car distance due to mesomeric effect under discussion. In addition to structural and spectral evidences, possible results from mesomerism of the compound were investigated by topological analysis on the electronic properties using quantum theory of atoms in molecules (QTAIM) approach. It is inferred from topological analysis that the nitrile group in para position has slightly stronger mesomeric effect than that in meta position due to diffusive double charge separation property during meta mesomerism of the compound. Mesomeric effect revealing itself by differences in delocalization indices between certain bonded atom pairs results in considerable decrease in aromaticity of phthalonitrile ring.  相似文献   
59.
60.
A new Schiff base compound has been synthesized by the reaction of 2-hydroxy-1-naphthaldehyde with 3,5-bis(trifluoromethyl)aniline.The title compound was characterized by elemental analysis, IR,1H NMR,13C NMR, and UV–Visible techniques.Its UV–Vis spectra was examined in polar and nonpolar solvents and in acidic and basic media. The crystal structure of the compound showed the OH group to be ortho to the imine group. It crystallizes in the monoclinic space group P21 with a = 11.328(2), b = 6.125(1), c = 11.937(2) ?, V = 825.1(2) ?3, D x = 1.543 g cm−3and Z = 2. An intramolecular O1- H⋯N1 [2.558(7) ?] hydrogen bond stabilizes the molecule. The compound has also been characterized by its antimicrobial activities. The ligand has been screened in vitro against the organisms Escherichia coli ATCC 11230, Staphylococcus aureus ATCC 6538, Klebsiella pneumoniae UC57, Micrococcus luteus La 2971, Proteus vulgaris ATCC 8427, Pseudomonas aeruginosa ATCC 27853, Mycobacterium smegmatis CCM 2067, Bacillus cereus ATCC 7064, and Listeria monocytogenes ATCC 15313, the yeast cultures Candida albicans ATCC 10231, Kluyveromyces fragilis NRRL 2415, Rhodotorula rubra DSM 70403, Debaryomyces hansenii DSM 70238, and Hanseniaspora guilliermondii DSM 3432.  相似文献   
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