Global prevention of all folic acid-preventable spina bifida and anencephaly by 2010

Folic acid-preventable spina bifida and anencephaly are pandemic, affecting 225,000 children a year. These birth defects are as preventable as polio. As we near the eradication of polio, it is time to make the commitment to global prevention of all folic acid-preventable spina bifida and anencephaly (FA-P SBA) by 2010. Folic acid fortification of centrally processed foods, such as wheat and corn flour, could immediately prevent all of these birth defects for much of the world's population. These fortification programs will also help adults by increasing serum folate concentration, eradicating folate deficiency anemia, providing human genome stability and reducing homocysteine serum concentration, which will probably prevent heart attacks and strokes, and may prevent colon cancer and Alzheimer's disease. Where there is no centrally processed and distributed food to fortify, intense efforts must be made to increase consumption of synthetic folic acid through vitamin supplements. Geneticists can play a major role in preventing FA-P SBA by helping to create the political will in each country to implement fortification and supplement programs to eliminate disease caused by the current pandemic of folate deficiency.     

Experimental investigation of a strongly shocked gas bubble

A free-falling, spherical, soap-film bubble filled with argon is subjected to a planar M=2.88 shock in atmospheric nitrogen; vorticity is deposited on the surface of the bubble during shock interaction, and the Richtmyer-Meshkov instability ensues. The geometrical development of the shocked bubble is diagnosed with laser sheet imaging and a planar slice showing two cross sections of both the major vortex ring and a secondary vortex ring is revealed experimentally for the first time. Quantitative measurements of the experimental data include the vortex velocity defect, and subsequent circulation calculations, along with a new set of relevant length scales. The shock wave strength, leading to a post-shock compressible regime, allows the study of the instability development in a regime between low Mach number shock tube experiments and high Mach number laser driven experiments that has not been investigated previously.     

5,5'-Bridged bis(1,2,3-dithiazoles): spin states and charge-transfer chemistry

Bifunctional 1,2,3-dithiazoles bridged with azine and phenylenediamine spacers have been prepared, with a view to determining the extent of communication between the two dithiazole rings as a function of the electronic and steric demands of the bridge. The crystal structure of the closed-shell diazine derivative [S(2)NClC(2)=NN=C(2)ClNS(2)] is rigorously planar. Cyclic voltammetry on this compound indicates two reversible one-electron oxidations. The radical cation state has been characterized by EPR spectroscopy and by crystal structure determination of its 1:1 PF(6)(-) salt. The latter reveals little interaction between neighboring radical cations; consistently, the material exhibits a conductivity of sigma < 10(-5) S cm(-1). Insertion of a phenylene group into the diazine bridge to afford [S(2)NClC(2)=NC(6)H(4)N=C(2)ClNS(2)] leads to significant torsional motion between the phenylene ring and the two end groups, as a result of which the two DTA rings are electronically independent; no radical cation state has been observed for this species. Crystal data for Cl(2)S(4)N(4)C(4): a = 5.1469(15), b = 13.343(2), c = 14.2031(17), orthorhombic, Pbca, Z = 4. Crystal data for Cl(2)S(4)N(4)C(4)PF(6): a = 11.699(4), b = 12.753(5), c = 10.461(4), beta = 112.17(1) degrees, monoclinic, C2/c, Z = 4. Crystal data for C(l2)S(4)N(4)C(10)H(4): a = 3.9477(6), b = 23.790(3), c = 7.3769(9), beta =90.793(12) degrees, monoclinic, P2(1)/c, Z = 2.     

Uniformity study of wafer-scale InP-to-silicon hybrid integration

β-SiC nanowires were synthesized by a simple carbothermal reduction of carbonaceous silica xerogel. The morphology and structure of the nanowires were investigated by X-ray diffraction, scanning electron microscope and transmission electron microscopy. The results showed that the nanowires were hexagonal prism-shaped hierarchical nanostructures. The typical stacking faults and twin defects of SiC nanowires were also observed. Band-gap characterization and photoluminescence properties of SiC nanowires were investigated by UV-vis absorption spectroscopy and fluorescence photometry, respectively. The results showed the SiC nanowire was an indirect transition semiconductor and the band gap energy for the SiC nanowires was 2.85 eV. The photoluminescence peak value at 470 nm (2.64 eV) originating from the SiC nanowires was a little higher than the value of band-gap energy.