Spatial regularities in the effect of locking of photon echo signals and associative optical memory

The efficiency of suppression of the generation of a photon echo response depending on the mutual spatial orientation of gradients of external nonumform electric fields acting on a resonant medium is studied. The possibility of creating an associative memory where the mutual orientation of the gradients of external electric fields is an associative key is discussed.     

Reaction of furan compounds with hydrogen peroxide in the presence of vanadium catalysts

The reactions of furan and a number of its derivatives (furfural, furan-2-carboxylic acid, 2-furfuryl alcohol, and others), in systems containing H₂O₂ and vanadium compounds, proceed through a mechanism of radical hydoxylation of the furan ring with the formation of 5-hydroxy-2(5H)-furanone and maleic acid. The total yield and ratio of the synthesized compounds depend on the reaction conditions.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 11, pp. 1462–1467, November, 1991.     

Similarity and the structure of unital matrix quadratic trinomials with pairwise different characteristic roots

The normal form of certain polynomial matrices is found.Translated from Zapiski Nauchnykh Seminarov Leningradskogo Otdeleniya Matematicheskogo Instituta im. V. A. Steklova Akademii Nauk SSSR, Vol. 175, pp. 63–68, 1989.     

The role of the spontaneous electrooptical effect in the formation of electroholographic properties of strontium barium niobate crystals

The possibility of usage of the spontaneous electrooptical (EO) effect in strontium barium niobate (SBN) crystals for the creation of controlled electroholographic elements is studied. It is found that unipolar EO properties of these crystals with respect to switching their spontaneous polarization make it possible to devise field-controlled holographic elements with reversible energy-independent memory for spatial position of an optical beam.     

Account of Thermal Flow Through Metal-Semimetal BiSb Contact Boundary for Determination of EHF Detector Volt-Watt Sensitivity

Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 10²-10³ times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work.