A lower bound for the spectral radius of a digraph

We show that the spectral radius ρ(D) of a digraph D with n vertices and c₂ closed walks of length 2 satisfies Moreover, equality occurs if and only if D is the symmetric digraph associated to a -regular graph, plus some arcs that do not belong to cycles. As an application of this result, we construct new sharp upper bounds for the low energy of a digraph, which extends Koolen and Moulton bounds of the energy to digraphs.     

Surface enhanced covalency and its effect on the surface states ofd-band metal oxides

The effect of electron-electron interactions on the surface states of ionicd-band oxides is reported. The local density of states of surface cations in the valence band region is significantly increased when surface states occur in the band gap. Coulomb repulsion associated with thissurface enhanced covalency tends to force surface states out of the band gap. These results suggest an explanation of recent experiments on SrTiO₃ and TiO₂.     

近红外漫反射光谱法测定玉米秸秆NDF与ADF含量

应用主成分空间和傅里叶变换近红外光谱技术,采用偏最小二乘回归法(PLS),在国内首次建立了适合不同品种类型、不同生长发育时期和不同部位且适配范围广的近红外漫反射光谱(NIRS)测定玉米秸秆中性洗涤纤维(NeutralDetergentFiber,NDF)和酸性洗涤纤维(AcidDetergentFiber,ADF)含量的稳定校正模型。结果表明,采用一阶导数 矢量归一化预处理和一阶导数 多元散射校正预处理,谱区均为7502～5450cm-1和4601～4247cm-1,所建立的NDF与ADF校正模型,其校正和预测效果最佳。其校正决定系数(R2cal)均大于094,交叉验证和外部验证决定系数(R2cv,R2val)为092～096,各项误差(RMSEE,RMSECV和RMSEP)为149%～181%。该结果对青贮玉米秸秆材料快速鉴定和筛选具有重要的意义。     

Scintillation advantages of lowest order Bessel–Gaussian beams

For a weak turbulence propagation environment, the scintillation index of the lowest order Bessel–Gaussian beams is formulated. Its triple and single integral versions are presented. Numerical evaluations show that at large source sizes and large width parameters, when compared at the same source size, Bessel–Gaussian beams tend to exhibit lower scintillations than the Gaussian beam scintillations. This advantage is lost however for excessively large width parameters and beyond certain propagation lengths. Large width parameters also cause rises and falls in the scintillation index of off-axis positions toward the edges of the received beam. Comparisons against the fundamental Gaussian beam are made on equal source size and equal power basis. PACS  42.25.Dd; 42.25.Bs; 42.68.Bz; 42.68.-w     

Novel pulsed switched power supply for a fast field cycling NMR spectrometer

In this paper, we outline the operating principles of a pulsed switched power supply for a fast field-cycling nuclear magnetic resonance spectrometer. The power supply uses a variant of a four-quadrant chopper with a duty cycle that defines the average output current. With this topology only two semiconductors are necessary to drive hundreds of amperes with an output power of several kilowatts. The output current ripple has a well-defined shape that can be reduced to acceptable values by a careful design of the semiconductors' controlling circuits and drivers. A power supply prototype was tested with a home build air-core magnet operating with fields between 0 and 0.21 T. The system is computer controlled using pulse generator and data acquisition PC cards, and specific user-friendly home-developed software. A comparative proton relaxometry study in two well-known liquid crystal compounds 5CB and MBBA was performed to check the reproducibility of the T1 measurements.     

Mixed 2D molecular systems: Mechanic, thermodynamic and dielectric properties

Study of Langmuir monolayers consisting of stearic acid (SA) and dipalmitoylphosphatidylcholine (DPPC) molecules was done by surface pressure-area isotherms (π-A), the Maxwell displacement current (MDC) measurement, X-ray reflectivity (XRR) and atomic force microscopy (AFM) to investigate the selected mechanic, thermodynamic and dielectric properties based on orientational structure of monolayers. On the base of π-A isotherms analysis we explain the creation of stable structures and found optimal monolayer composition. The dielectric properties represented by MDC generated monolayers were analyzed in terms of excess dipole moment, proposing the effect of dipole-dipole interaction. XRR and AFM results illustrate deposited film structure and molecular ordering.     

Current-voltage characteristics of Au/GaN/GaAs structure

Au/GaN/n-GaAs structure has been fabricated by the electrochemically anodic nitridation method for providing an evidence of achievement of stable electronic passivation of n-doped GaAs surface. The change of the electronic properties of the GaAs surface induced by the nitridation process has been studied by means of current-voltage (I-V) characterizations on Schottky barrier diodes (SBDs) shaped on gallium nitride/gallium arsenide structure. Au/GaN/n-GaAs Schottky diode that showed rectifying behavior with an ideality factor value of 2.06 and barrier height value of 0.73 eV obeys a metal-interfacial layer-semiconductor (MIS) configuration rather than an ideal Schottky diode due to the existence of GaN at the Au/GaAs interfacial layer. The formation of the GaN interfacial layer for the stable passivation of gallium arsenide surface is investigated through calculation of the interface state density N_ss with and without taking into account the series resistance R_s. While the interface state density calculated without taking into account R_s has increased exponentially with bias from 2.2×10¹² cm⁻² eV⁻¹ in (E_c−0.48) eV to 3.85×10¹² cm⁻² eV⁻¹ in (E_c−0.32) eV of n-GaAs, the N_ss obtained taking into account the series resistance has remained constant with a value of 2.2×10¹² cm⁻² eV⁻¹ in the same interval. This has been attributed to the passivation of the n-doped GaAs surface with the formation of the GaN interfacial layer.     

Cytotoxicity of Shear Exfoliated Pnictogen (As,Sb, Bi) Nanosheets

The experimental achievement of phosphorene, which exhibits superior electronic, physical, and optical properties has spurred recent interest in other Group 15 elemental 2D nanomaterials such as arsenene, antimonene, and bismuthene. These unique and superior properties of the pnictogen nanosheets have spurred intensive research efforts and led to the discovery of their diversified potential applications; for instance, optical Kerr material, photonic devices, pnictogen-decorated microfibers, high-speed transistors, and flexible 2D electronics. Previous studies have mainly been dedicated to study the synthesis, properties, and applications of the heavy pnictogens nanosheets; however, the toxicological behaviour of these nanosheets has yet to be established. Herein, the cytotoxicity study of pnictogen nanosheets (As, Sb, and Bi) was conducted over 24 h of incubation with various concentrations of test materials and adenocarcinoma human lung epithelial A549 cells. After the treatment period, the remaining cell viabilities were obtained through absorbance measurements with WST-8 and MTT assays. These findings demonstrate that the toxicity of pnictogen nanosheets decreases down Group 15, whereby arsenic nanosheets are considered to be the most toxic, whereas bismuth nanosheets induce low cytotoxicity. The findings of this study constitute an important initial step towards enhancing our understanding of the toxicological effects of pnictogen nanosheets in light of their prospective commercial applications.     

Shaping metal–organic framework (MOF) powder materials for CO2 capture applications—a thermogravimetric study

Journal of Thermal Analysis and Calorimetry - The paper presents the effect of the tabletting pressure and time on the chemical structure and crystallinity of the CuBTC and MIL-53(Al)...