Nonlinear optical characteristics of CdS and ZnS nanoparticles implanted into zirconium oxide thin films

The nonlinear refractive indices γ and nonlinear absorption coefficients of ZrO₂ films doped with CdS or ZnS nanoparticles, as well as with various metals, are measured. The effects of semiconductor and metal nanoparticles and annealing on the nonlinear optical properties of films are studied. The structural parameters of films, determined by electron microscopy and x-ray dispersion spectroscopy, are compared to the optical and nonlinear optical characteristics of these media. The high magnitude of γ of the films ((3±0.6)×10^?11 cm² W^{? 1}) is attributed to the surface enhancement effect in semiconductor nanoparticles. On the basis of Z-scan data obtained at different intensities of radiation, it is shown that the variations in γ of the ZrO₂:CdS(Cr) and ZrO₂:ZnS(Mn) films are related to the generation of free carriers.     

Nonlinear optical characteristics of a pseudoisocyanine solution

The saturated nonlinear absorption and Kerr nonlinearities of an aqueous pseudoisocyanine solution are investigated at the wavelengths of 532 and 529 nm with the use of pulsed laser radiation of different duration (8 ns and 475 fs). The measured values of the nonlinear refractive indices amount to ?6×10^?12 (t=8 ns) and ?8×10^?14 cm²W^?1 (t=475 fs). The change in self-action effects in pseudoisocyanine from self-defocusing to self-focusing revealed in the case of increasing intensity of femtosecond laser pulses is attributed to the effect of a fifth-order nonlinear optical process. The nonlinear refractive index responsible for this process amounts to 4×10^?24 cm⁴ W^?2. The imaginary part of the third-order nonlinear susceptibility, responsible for the induced transparency of the pseudoisocyanine solution, is Imχ ⁽³⁾=?2×10^?12 esu. Temporal changes in the shape of nanosecond laser pulses due to the nonlinear refraction induced by a thermal process are analyzed.     

Measurement of the g-Factor of the 27− High-Spin Isomer State of 152Dy

The g-factor of the 27⁻ isomer state of ¹⁵²Dy has been measured using the Time-Integral Perturbed Angular Distribution (TIPAD) method. The high-spin states of ¹⁵²Dy have been populated by ¹⁴¹Pr(¹⁶O,p4n)¹⁵²Dy reaction at E = 115 MeV from the AVF cyclotron at CYRIC. The paramagnetic correction factor of Dy ions in Pr has been determined to be 4.2(5) by the Time-Differential Perturbed Angular Distribution (TDPAD) measurement of the 21⁻ state of ¹⁵²Dy. As a result, the g-factor of the 27⁻ isomer state of ¹⁵²Dy has been obtained to be +0.09(5). This shows the smaller value than the expected one of +0.39 deduced from a fully aligned configuration of π(h _11/2 ²) ⊗ ν(f _7/2 ² h _9/2 i _13/2).     

Characterization of preformed plasmas with an interferometer for ultra-short high-intensity laser-plasma interactions

The evolution of an Al preformed plasma produced by a prepulse was observed before and after the arrival of the main pulse by an interferometer using a femtosecond probe pulse. A central density depression due to the ponderomotive force of the main laser pulse in the preformed plasma with a 100 m scale length was clearly visible after the main pulse irradiation at an intensity of 5×10¹⁶ W/cm². The temporal profiles of the prepulse, characterized by a cross-correlation in conjunction with a precise density profile measurement by an interferometer, contribute to the better understanding of femtosecond laser-matter interactions. PACS 52.38.-r; 52.50.Jm; 52.70.-m     

Quantum Hall effect in back-gated InAs/GaSb heterostructures under a tilted magnetic field

We investigate the quantum Hall effect (QHE) in the InAs/GaSb hybridized electron–hole system grown on a conductive InAs substrate which act as a back-gate. In these samples, the electron density is constant and the hole density is controlled by the gate-voltage. Under a magnetic field perpendicular to the sample plane, the QHE appears along integer Landau-level (LL) filling factors of the net-carriers, where the net-carrier density is the difference between the electron and hole densities. In addition, longitudinal resistance maxima corresponding to the crossing of the extended states of the original electron and hole LLs make the QHE regions along integer-ν_net discontinuous. Under tilted magnetic fields, these R_xx maxima disappear in the high magnetic field region. The results show that the in-plane magnetic field component enhances the electron–hole hybridization and the formation of minigaps at LL crossings.     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.     

Transition between internal transport barriers with different temperature-profile curvatures in JT-60U Tokamak plasmas

A spontaneous transition phenomena between two states of a plasma with an internal transport barrier (ITB) is observed in the steady-state phase of the magnetic shear in the negative magnetic shear plasma in the JT-60U tokamak. These two ITB states are characterized by different profiles of the second radial derivative of the ion temperature inside the ITB region (one has a weak concave shape and the other has a strong convex shape) and by different degrees of sharpness of the interfaces between the L mode and the ITB region, which is determined by the turbulence penetration into the ITB region.