Coplanar Schottky variable phase shifter constructed on GaAs substrate for millimeter-wave application

A Schottky contact variable phase shifter constructed on either uniformly or periodically doped GaAs substrate is discussed in details. The device can operate at millimeter-wave frequencies with reasonably low attenuation.Work supported by the Office of Naval Research under Contract N00014-79-0053, Joint Service Electronics Program under Grant F49620-82-C-0033, and US Army Research Office under Contract DAAG29-81-K-0053.     

High density excitons in tracks of energetic charged particles in CuCl

The luminescence induced by heavy charged particle irradiation has been measured. The bi-exciton lines (M_T and M_L) and the line at 3926 Å were observed. It is concluded that these lines arise from the densely excited region in particle tracks.     

Magnetic properties of H+ implanted bubble garnet films by means of depth selective conversion electron Mössbauer spectroscopy

Bubble garnet films before and after 50 keV H⁺ implantation have been studied by means of DCEMS. The spintilt angle of the films as grown after etching off 1000 å was measured to be 30±2? relative to the surface normal at the top of the surface. The doses of implanted H⁺ ions were 2, 4 and 8×10¹⁶ ions/cm². Mössbauer spectra were measured after successive etching of the implanted layer. The magnetic hyperfine field was obtained as a function of depth. The implanted hydrogen distribution was also measured by the¹H(¹⁵N, αγ)¹²C reaction.     

Luminescence study of self-trapped excitons in CdMoO4

Luminescence properties of CdMoO₄ crystals have been investigated in a wide temperature range of T=5–300 K. The luminescence-excitation spectra are examined by using synchrotron radiation as a light source. A broad structureless emission band appears with a maximum at nearly 550 nm when excited with photons in the fundamental absorption region (<350 nm) at T=5 K. This luminescence is ascribed to a radiative transition from the triplet state of a self-trapped exciton (STE) located on a (MoO₄)^2? complex anion. Time-resolved luminescence spectra are also measured under the excitation with 266 nm light from a Nd:YAG laser. It is confirmed that triplet luminescence consists of three emission bands with different decay times. Such composite nature is explained in terms of a Jahn–Teller splitting of the triplet STE state. The triplet luminescence at 550 nm is found to be greatly polarized in the direction along the crystallographic c axis at low temperatures, but change the degree of polarization from positive to negative at T>180 K. This remarkable polarization is accounted for by introducing further symmetry lowering of tetrahedral (MoO₄)^2? ions due to a uniaxial crystal field, in addition to the Jahn–Teller distortion. Furthermore, weak luminescence from a singlet state locating above the triplet state is time-resolved just after the pulse excitation, with a polarization parallel to the c axis. The excited sublevels of STEs responsible for CdMoO₄ luminescence are assigned on the basis of these experimental results and a group-theoretical consideration.     

Application of a self-sensing conductive probe for Si device imaging

For the evaluation of two-dimensional carrier profiles in semiconductor devices, we have developed a novel form of probe–sensor combined unit that uses an etched tungsten wire as a conductive probe, and commercially available quartz tuning fork as the force sensor. This unit has a self-sensing capability due to the piezoelectric effect of quartz tuning fork, thus obviating optical setup, and its conductivity is higher and more stable than that of conventional metal-coated Si cantilever. In addition, this probe–sensor combined unit is inexpensive and easy to use, when compared to the well-known optical methods of Si-based cantilever vibration detection system. Our scanning probe microscope using this probe–sensor combined unit is able to mapping the capacitive gradient signal (dC/dZ image) and internal damping of quartz tuning fork oscillation (dissipation image) while scanning the sample surface. In this letter, we show the results of visualization of the p–n junction locus of a Si metal–oxide–semiconductor field effect transistor in both dC/dZ and dissipation images.