Surface analytical characterization of oxide-free Si(100) wafer surfaces

Summary Wet-chemical cleaning procedures of Si(100) wafers are surface analytically characterized and compared. Hydrophobic surfaces show considerably less native oxides in comparison to hydrophilic surfaces.The growth of the oxide is determined as a function of exposure to air by means of XPS measurements. The chemically shifted Si2p XPS signal is utilized for the quantification of the growth kinetics.One hour after cleaning no chemically shifted Si2p XPS peak is discernible on the hydrophobic surfaces. Assuming homogeneous oxide growth, the detection limit of native oxides is estimated to be below 0.05 nm using an emission angle of 18° with respect to the wafer surface. The calculation of the oxide thickness from the chemically shifted and nonchemically shifted Si2p XPS peak intensities is carried out according to Finster and Schulze [1]. For more than a day after cleaning no surface oxides can be identified on the hydrophobic surfaces. The oxide growth kinetics is logarithmic. The very slow oxidation rate cannot be attributed to fluorine residues since no fluorine is seen by XPS. We explain the slow oxidation rate by a homogeneous hydrogen saturated Si(100) wafer surface.

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Oberflächenanalytische Charakterisierung oxidfreier Si(100)-Waferoberflächen

     

Reaction of 2-formyl-1,3-cyclohexanediones with cyanoacetamide

Chemistry of Heterocyclic Compounds -     

Convergence of the method of partition of regions for second-order elliptic conjugation problems

Translated from Ukrainskii Matematicheskii Zhurnal, Vol. 41, No. 8, pp. 1137–1141, August, 1989.     

Design and Experimental Characterization of Low‐Volume PM10/2.5/1.0 Trichotomous Sampler Inlet

This paper presents the development and laboratory evaluation of a PM10/2.5/1.0 trichotomous sampling inlet that consists of two main parts: a previously designed PM10 size‐selective inlet part and a PM2.5/1.0 two‐stage virtual impactor, which was newly fabricated and attached serially to the PM10 size selective inlet part. Particles are collected in three locations through the trichotomous sampling inlet to provide for not only particle concentration measurements of PM10, PM2.5 and PM1.0, but also those of PM2.5–10 and PM1.0–2.5.     

Illusions of vision: Interpretation within the framework of a holographic model

Several illusions of vision are considered on the basis of a neurophysiological holographic model of visual perception at the level of the eye’s and the retina. It is suggested that the eye’s optical system forms a spatial spectrum of the observed object rather than its image on the retina. The spectrum is encoded by active anisotropic quasi-crystalline structures of rod rhodopsins and cone iodopsins, and a complex Fourier hologram of the observed object consisting of two quadrature components is recorded. The holographic hypothesis is confirmed by the results obtained by digital simulation.     

Account of Thermal Flow Through Metal-Semimetal BiSb Contact Boundary for Determination of EHF Detector Volt-Watt Sensitivity

Bismuth, antimony and its alloys are the typical representatives of a class of semimetals, which electric conductance is lower in 10²-10³ times, than of usual well conducting an electrical current metals. The alloys bismuth with antimony have semi-conductor properties in wide area of compositions at temperatures below 77 °K. The semimetals are rather perspective materials from the point of view of their probable application in various devices [1,2,3].In present time the semimetal alloys BiSb have wide application in thermoelectric generators and refrigerators. In work [3] the opportunity of use of semimetals BiSb with percentage content of Bi and Sb from 8 % up to 25 % was shown as high-sensitivity and of small inertion indicators of the mm range radiation where thermoelectric effect is used. The principle of action of such indicators is based on occurrence of temperature gradient in a semimetal crystal BiSb that has two contacts of the various area with flowing electrical current. Basic element of such device is the dot contact metal - semimetal. One of the main characteristics is volt-watt sensitivity of metal-semimetal BiSb contact which calculating is shown in present work.