Experimental determination of electron distribution functions in degenerate GaAs at high electric fields

The change of the optical absorption due to applied electric fields up to 450 V/cm was measured on n-type GaAs having a carrier concentration of 10¹⁸ cm^?3 at 77 K. The fundamental absorption in degenerate n-type semiconductors is proportional to the number of unoccupied places in the conduction band at an energy, which is determined by the phonon energy and the bandstructure. Hence, the measured change in absorption allows the evaluation of the distribution function. Results are given as a function of the energy above the conduction band edge, which was determined assuming parabolic bands.     

Zerfällung topologischer Gruppen

Ohne Zusammenfassung     

Elektronendichten und Elektronentemperaturen bei Verdichtungsstößen

Electromagnetically driven shock-waves of about Mach 50 in Helium have been spectroscopically analysed. Shape and relative intensities of the HeII-3203 and HeI-5876 lines and continuum have been measured during the first microsecond following the luminous front. From 0.15 μsec up to 0.85 μsec after luminous onset electron density decreases from 2.5·10¹⁷cm^?3 to 10¹⁷cm^?3. The electron temperature drops from 4.5 eV to 4.0 eV. Values as calculated byRankine-Hugoniot coincide with experimental results within 10%. From HeI-5876 and HeI-3889 precursor radiation and no corresponding radiation from HeII-lines it is to be concluded that the signals are due to secondary emission.     

Vergleichende Untersuchungen zur Genauigkeit photometrischer und chemischer Analysenverfahren

Zusammenfassung Wir haben in der vorstehenden Abhandlung zu zeigen versucht, in welcher Weise die Zuverlässigkeit photometrischer Meßeinrichtungen und Meßverfahren zu prüfen ist. Im vorliegenden Fall — beim lichtelektrischen Photometer ELKO II — hat die statistische Prüfung sämtlicher Arbeitsgänge ergeben, daß der Apparatefehler nicht größer ist als der zufällige Fehler bei klassischen chemischen Bestimmungsverfahren. Es ist demnach möglich, mit Hilfe photometrischer Messungen auch bei größeren Substanzmengen zu ebenso genauen und zuverlässigen Resultaten zu gelangen wie mit klassischen Verfahren. Statistisch überprüft und verglichen wurden beim Kupfer die photometrischen Bestimmungen mit Nitrilotriessigsäure und als Kupfersulfat     

High-resolution imaging of single fluorescent molecules with the optical near-field of a metal tip

We show that a concentration of light at a metal tip allows near-field optical imaging of single fluorescent dye molecules at very high resolution, despite strong quenching effects. Details as small as 10 nm were observed in the fluorescence patterns of single Cy-3 dyes bound to the termini of DNA. Data evaluation by model fitting determines the positions of the dyes to an accuracy even better than 1 nm and also yields their 3D orientation. The metal tip simultaneously provides high-resolution topographic imaging complementing the optical signal for a detailed surface examination.     

Generation of intense,carrier-envelope phase-locked few-cycle laser pulses through filamentation

Intense, well-controlled light pulses with only a few optical cycles start to play a crucial role in many fields of physics, such as attosecond science. We present an extremely simple and robust technique to generate such carrier-envelope offset (CEO) phase locked few-cycle pulses, relying on self-guiding of intense 43-fs, 0.84 mJ optical pulses during propagation in a transparent noble gas. We have demonstrated 5.7-fs, 0.38 mJ pulses with an excellent spatial beam profile and discuss the potential for much shorter pulses. Numerical simulations confirm that filamentation is the mechanism responsible for pulse shortening. The method is widely applicable and much less sensitive to experimental conditions such as beam alignment, input pulse duration or gas pressure as compared to gas-filled hollow fibers. PACS 45.65.Ky; 42.65.Re