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Well-crystallized hydrogenated carbon nitride thin films have been prepared by microwave plasma enhanced chemical vapor deposition (MWPECVD). 1H-1,2,3-triazole+N2 and Si (1 0 0) were used as precursor and substrate, respectively. Substrate temperature during the deposition was recorded to be 850 °C. The synthesized samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photo-electron spectroscopy (XPS) analyses. The plasma compositions were checked by optical emission spectroscopy (OES). XRD observation strongly suggests that the films contain polycrystalline carbon nitride with graphitic structure of (1 0 0), (0 0 2), (2 0 0) and (0 0 4). XPS peak quantification reveals that the atomic ratio of the materials C:N:O:Si is 32:41:18:9. X-ray photo-electron peak deconvolution shows that the most dominant peak of C (1s) and N (1s) narrow scans correspond to sp2 hybrid structure of C3N4. These observations indicate that 1H-1,2,3-triazole favors the formation of hydrogenated carbon nitride with graphitic phase by CVD method and thus is in good agreement with XRD results. SEM of surface and OES of plasma also support the formation of polycrystalline carbon nitride films from 1H-1,2,3-triazole+N2 by CVD.  相似文献   
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A new porous solid macrocyclic 1,4,7,11,14-pentaazapentadecane-3,15-dione polysiloxane ligand system of the general formula P–(CH2)3–C11H22O2N5 (where P represents [Si–O]n siloxane network) has been prepared by the reaction of polysiloxane-immobilized iminobis(N-(2-aminoethyl)acetamide) with 1,3-dibromopropane. The FTIR and XPS results confirm the introduction of the macrocyclic functional ligand group into the polysiloxane network. The new macrocyclic polysiloxane ligand system exhibits high potential for the uptake of metal ions (Fe3+, Co2+, Ni2+, Cu2+ and Zn2+).  相似文献   
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An unexpected reduction of indolic double bond of mitragynine was described by using n-butyl silane and tris(pentafluorophenyl)triborane.  相似文献   
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A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices had rectifying properties with a barrier height of 0.5289–0.5468 eV. The fabricated Schottky diodes detected RF signals well and their cut-off frequencies up to 20 GHz were estimated in direct injection experiments. To achieve a high cut-off frequency, a smaller Schottky contact area is required. The feasibility of direct integration with the planar dipole antenna via a coplanar waveguide transmission line without insertion of matching circuits was discussed. A higher cut-off frequency can also be achieved by reducing the length of the coplanar waveguide transmission line. These preliminary results represent a breakthrough as regards direct on-chip integration technology, towards the realization of a ubiquitous network society.  相似文献   
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An efficient method is described for the synthesis of 9-phenyl-9H-pyrido[3,4-b]indole and 9-(4-chlorophenyl)-9H-pyrido[3,4-b]indole by employing a catalytic amount of CuI (10 mole%) without any ligand. The single crystal of 9-phenyl-9H-pyrido[3,4-b]indole was produced by crystallization from hexane and ethyl acetate mixture that was investigated by single X-ray diffraction (XRD). The compound crystallizes in monoclinic P21/c space group with unit cell dimensions a = 11.3132(5) Å, b = 12.0061(5) Å, c = 9.2498(4) Å, α = 90°, β = 103.187(3)°, γ = 90°. 1H and 13C NMR, IR, and mass spectroscopic methods of the compounds are also discussed.  相似文献   
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Aryl epoxides undergo rearrangement and oxidative cleavage when reacted with in situ prepared hydroxy‐λ3‐iodane complexes. The presence of H2O plays a decisive role in steering the reaction path. A mechanistic scheme is proposed that accounts for the observed chemoselectivities.  相似文献   
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