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41.
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We report on the fabrication and characteristics of sandwich-type tunnel junctions with highly crystalline sputtered a-axis oriented thin film of Y1Ba2Cu3O7-x (YBC) as the base and the counter electrode. The junctions have been fabricated on SrTiO3 (100) and MgO (100) substrates. A non-superconducting phase of YBC corresponding to a lattice constant of 4.08 Å is used as the barrier layer making this an all YBC sandwich junction. For all temperatures below Tce (R=0) of the device, a zero voltage current was observed. The critical current density (Jc) of the device was found to be dependent on the thickness of the barrier layer and the crystallinity of the a-axis oriented YBC electrodes. At 40 K, such a junction fabricated on a SrTiO3 (100) substrate was found to have a Jc of 1.8 X 104 A/cm2 and an IcRn product of 0.2 mV.  相似文献   
43.
The Chebychev polynomials associated to any given moments μn 0 are formally orthogonal with respect to the formal δ-series $$w(x)= {\sum^\infty_0}(- 1)^{n}\mu_{{n}}\delta^{(n)}(x)/n!.$$ We show that this formal weight can be a true hyperfunctional weight if its Fourier transform is a slowly increasing holomorphic function in some tubular neighborhood of the real line. It provides a unifying treatment of real and complex orthogonality of Chebychev polynomials including all classical examples and characterizes Chebychev polynomials having Bessel type orthogonality.  相似文献   
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We investigate the effects of a thin AlAs layer with different position and thickness on the optical properties of InAs quantum dots (QDs) by using transmission electron microscopy and photoluminescence (PL). The energy level shift of InAs QD samples is observed by introducing the thin AlAs layer without any significant loss of the QD qualities. The emission peak from InAs QDs directly grown on the 4 monolayer (ML) AlAs layer is blueshifted from that of reference sample by 219 meV with a little increase in FWHM from 42–47 meV for ground state. In contrast, InAs QDs grown under the 4 ML AlAs layer have PL peak a little redshifted to lower energy by 17 meV. This result is related to the interdiffusion of Al atom at the InAs QDs caused by the annealing effect during growing of InAs QDs on AlAs layer.  相似文献   
46.
Lujie Chen  Cho Jui Tay  Yuanhao Huang 《Optik》2005,116(3):123-128
Quality-guided algorithm is a widely used method in phase unwrapping. This paper shows an accurate quality map based on fringe contrast for 3D shape measurement. Phase-shifted fringe patterns are projected onto an object surface by a programmable liquid crystal projector and recorded by a CCD camera. A wrapped phase map and a fringe contrast map are extracted from the deformed fringe patterns by the phase-shifting technique. Guided by the contrast map, the quality-guided unwrapping algorithm minimizes unwanted shadow and non-uniform surface reflectance effects and is able to retrieve a correct surface profile. Validity of the proposed method is tested on a fish model and a cutting tool specimen.  相似文献   
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The Schiff base compound (E)-N-{2-[(2-hydroxybenzylidene)amino]phenyl}benzenesulfonamide has been synthesized and characterized by IR, NMR and Uv-vis spectroscopies, and single-crystal X-ray diffraction technique. In addition, quantum chemical calculations employing density functional theory (DFT) method with the 6–311++G(d,p) basis set were performed to study the molecular, spectroscopic and some electronic structure properties of the title compound, and the results were compared with the experimental findings. There exists a good correlation between experimental and theoretical data. Enol-imine/keto-amine tautomerization mechanism was investigated in the gas phase and in solution phase using the polarizable continuum model (PCM) approximation. The energetic and thermodynamic parameters of the enol-imine?→?keto-amine transfer process show that the single proton exchange is thermodynamically unfavored both in the gas phase and in solution phase. However, the reverse reaction seems to be feasible with a low barrier height and is supported by negative values in enthalpy and free energy changes both in the gas phase and in solution phase. The solvent effect is found to be sizable with increasing polarity of the solvents for the reverse reaction. The predicted nonlinear optical properties of the compound are found to be much greater than those of urea.  相似文献   
50.
The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the SiNx:H film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. For optimizing surface layer in crystalline silicon solar cells, by varying gas mixture ratios (SiH4 + NH3 + N2, SiH4 + NH3, SiH4 + N2), the hydrogenated silicon nitride films were analyzed for its antireflection and surface passivation (electrical and chemical) properties. The film deposited with the gas mixture of SiH4 + NH3 + N2 showed the best properties in before and after firing process conditions.The single crystalline silicon solar cells fabricated according to optimized gas mixture condition (SiH4 + NH3 + N2) on large area substrate of size 156 mm × 156 mm (Pseudo square) was found to have the conversion efficiency as high as 17.2%. The reason for the high efficiency using SiH4 + NH3 + N2 is because of the good optical transmittance and passivation properties. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.  相似文献   
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