Measurement of time-dependent CP-violating asymmetries in B0 --> K(s)0K(s)0K(s)0 decay

We present a measurement of CP-violation parameters in the B0 --> K(s)0K(s)0K(s)0 decay based on a sample of 275 x 10(6) BB pairs collected at the upsilon(4S) resonance with the Belle detector at the KEKB energy-asymmetric e+e- collider. One neutral B meson is fully reconstructed in the decay B0 --> K(s)0K(s)0K(s)0, and the flavor of the accompanying B meson is identified from its decay products. CP-violation parameters are obtained from the asymmetry in the distributions of the proper-time interval between the two B decays: S = +1.26 +/- 0.68(stat) +/- 0.20(syst) and [symbol: see text] = +0.54 +/- 0.34(stat) +/- 0.09(syst).     

Observation of the D1(2420)-->Dpi + pi- decays

We report on the first observation of D0/1(2420)-->D0pi- pi+ and D+/1(2420-->D+ pi- pi+ decays (where the contribution from the dominant known D1-->D*pi decay mode is excluded) in the B- -->D0/1pi-) and (-)B0-->D+/1pi- decays, respectively. The observation is based on 15.2 x 10(7) B(-)B events collected with the Belle detector at the KEKB collider. We also set 90% confidence level upper limits for the branching fractions of the four following decays: B- -->D0/1pi-, D01-->D(*0)pi- pi+, (-)B0-->D+/1pi-, D+/1-->D(*+) pi- pi+, B- -->D(*0)2(2460)pi-, D(*0)2 -->D(*0) pi- pi+, (-)B0-->D(*+)2(2460)pi-, D(*+)2-->D(*+)pi- pi+.     

Observation of a near-threshold omegaJ/psi mass enhancement in exclusive B-->KomegaJ/psi decays

We report the observation of a near-threshold enhancement in the omegaJ/psi invariant mass distribution for exclusive B-->KomegaJ/psi decays. The results are obtained from a 253 fb(-1) data sample that contains 275 x 10(6) BB pairs that were collected near the Upsilon(4S) resonance with the Belle detector at the KEKB asymmetric energy e(+)e(-) collider. The statistical significance of the omegaJ/psi mass enhancement is estimated to be greater than 8sigma.     

Search for D0-D0 mixing in D0 --> K+ pi(-) decays and measurement of the doubly-Cabibbo-suppressed decay rate

We have searched for mixing in the D(0)-D (0) system by measuring the decay-time distribution of D(0) --> K(+) pi(-) decays. The analysis uses 90 fb(-1) of data collected by the Belle detector at the KEKB e(+) e(-) collider. We fit the decay-time distribution for the mixing parameters x' and y' and also for the parameter R(D), which is the ratio of the rate for the doubly-Cabibbo-suppressed decay D(0)--> K+ pi(-) to that for the Cabibbo-favored decay D(0)--> K-pi(+). We do these fits both assuming CP conservation and allowing for CP violation. We use a frequentist method to obtain a 95% C.L. region in the x'(2) - y' plane. Assuming no mixing, we measure R(D) = (0.381 +/- 0.017(+0.008)(-0.016))%.     

用发射光谱分析法检测地膜中金属杂质含量

本文描述农用薄膜中Ａｌ、Ｆｅ、Ｍｇ、Ｃａ、Ｓｉ、Ｃｕ、Ｔｉ杂质元素的发射光谱分析法，该方法直接压样于石墨电极中，简便，快速，取得了满意的结果。     

彩色照片制作技术

彩色照片由于色彩鲜艳．形象逼真，在工农业生产、科研和日常生活中得到广泛应用。本文就校正偏色与曝光谈一下自己的看法。     

空间光学遥感器主镜加工过程中疲劳寿命研究

针对空间光学遥感器主镜镜面加工过程中,磨盘与主镜间磨削动作往复运行引起的主镜柔性支撑结构疲劳寿命问题,通过建立主镜组件的有限元模型,利用MSC.Fatigue软件按应力-寿命(S-N)法对主镜组件进行了疲劳寿命分析,确定了支撑结构的薄弱部位,并对仿真过程进行了误差分析,讨论了影响仿真结果的各个因素.对比热真空试验和动力学试验前后主镜镜面面型数据,验证了支撑结构加工、设计参量的合理性.通过疲劳寿命仿真分析,可以有效预示光学结构在加工过程中的疲劳情况,为空间光学遥感器结构的设计、加工提供理论依据和参考.     

Electrical properties of ferroelectric-gate FETs with SrBi2Ta2O9 formed using MOCVD technique

Ferroelectric-gate?field-effect?transistors?(FeFETs) with a Pt/SrBi₂Ta₂O₉/Hf-Al-O/Si gate stack were fabricated using the metal-organic chemical vapor deposition (MOCVD) technique to prepare the SrBi₂Ta₂O₉ (SBT) ferroelectric layer. A?good threshold voltage (V _th) distribution was found for more than 90?n-channel FeFETs in one chip with a 170?nm SBT layer owing to the good film uniformity of the SBT layer deposited by MOCVD. The average memory window $(V_{\mathrm{w}}^{\mathrm{av}})$ and the standard deviations (σ _thl,σ _thr) of the left- and right-side branches of the drain-gate voltage curves of the FeFETs yielded a $V_{\mathrm{w}}^{\mathrm{av}}/(\sigma_{\mathrm{thl}} + \sigma_{\mathrm{thr}})$ value of 5.45, indicating that the FeFETs can be adapted for large-scale-integration. The electric field, the energy band profile in the gate stack, and the gate leakage current were also investigated at high gate voltages. We found that the effect of Fowler–Nordheim tunneling appeared under these conditions. Because of the tunneling injection and trapping of electrons into the gate insulators, the operation voltage ranges of the FeFETs were limited by this tunneling.