Formation of Fe i –B pairs in silicon at high temperatures

We report on the detection of Fe _i –B pairs in heavily B doped silicon using ⁵⁷Fe emission Mössbauer spectroscopy following implantation of radioactive ⁵⁷Mn⁺ parent ions (T _1/2?=?1.5 min) at elevated temperatures >?850 K. The Fe _i –B pairs are formed upon the dissociation of Fe _i –V pairs during the lifetime of the Mössbauer state (T _1/2?=?100 ns). The resulting free interstitial Fe_i diffuses over sufficiently large distances during the lifetime of the Mössbauer state to encounter a substitutional B impurity atom, forming Fe _i –B pairs, which are stable up to ～1,050 K on that time scale.     

Low-frequency noise and inelastic tunneling spectroscopy in Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) epitaxial magnetic tunnel junctions

We report on tunnelling magnetoresistance (TMR), current–voltage (IV) characteristics and low-frequency noise in epitaxially grown Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) magnetic tunnel junctions (MTJs) with dimensions from 2×2 to 20×20 μm². The evaluated MgO energy barrier (0.50±0.08 eV), the barrier width (13.1±0.5 Å) as well as the resistance times area product (7±1 MΩ μm²) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. At low temperatures (T<10 K) inelastic electron tunneling spectroscopy (IETS) shows anomalies related to phonons (symmetric structures below 100 meV) and asymmetric features above 200 meV. We explain the asymmetric features in IETS as due to generation of electron standing waves in one of the Fe electrodes. The noise power, though exhibiting a large variation, was observed to be roughly anti-correlated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behavior could be related to the influence of magnetostriction on the characteristics of the insulating barrier through changes in local barrier defects structure.     

Effects of ground-state correlations on 2νββ decay rates and limitations of the QRPA approach

Half-lives of the 2νββ decay are calculated in the proton-neutron QRPA for⁷⁶Ge,⁸²Se,¹⁰⁰Mo,^128,130Te,¹³⁶Xe and¹⁵⁰Nd. The strength of the particle-particle interaction, which plays a decisive role for a reliable evaluation of the half-lives, is determined from a QRPA calculation of singleβ ⁺ decays. The 2ν decay rates calculated with the interaction strength fitted in this way are strongly suppressed and found to be consistent with the existing experimental data. Effects of the ground-state correlations on the suppression are investigated. On the other hand, the present calculation indicates limitations of the QRPA approach.     

Oil Migration in Chocolate

Oil migration in filled chocolates limits shelf life due to texture changes and loss of visual appeal. Spatial and temporal oil concentration changes of a two-layer chocolate and peanut butter filling system, which models a filled chocolate, were monitored by magnetic resonance imaging. Formulations of chocolate varied with respect to particle size, milk fat content and emulsifier level. Sorption-time experimental data was used to establish the best fit diffusion coefficient for a Fickian diffusion model. On the basis of the comparison of spatial experimental data to the model, Fickian diffusion alone does not account for oil migration. Authors' address: Michael J. McCarthy, Department of Food Science and Technology, University of California, One Shields Avenue, Davis, CA 95616, USA     

Synergetic information versus Shannon information in self-organizing systems

We discuss how synergetic information, i.e. the compressed Shannon information of the order parameters, which is produced by the cooperativity of the system, can be determined experimentally, especially in fluids.     

High performance a-Si solar cells and new fabrication methods for a-Si solar cells

The super chamber, a separated UHV reaction-chamber system has been developed. A conversion efficiency of 11.7% was obtained for an a-Si solar cell using a high-quality i-layer deposited by the super chamber, and a p-layer fabricated by a photo-CVD method.As a new material, amorphous superlattice-structure films were fabricated by the photo-CVD method for the first time. Superlattice structure p-layer a-Si solar cells were fabricated, and a conversion efficiency of 10.5% was obtained.For the fabrication of integrated type a-Si solar cell modules, a laser pattering method was investigated. A thermal analysis of the multilayer structure was done. It was confirmed that selective scribing for a-Si, TCO and metal film is possible by controlling the laser power density. Recently developed a-Si solar power generation systems and a-Si solar cell roofing tiles are also described.