The effect of surface crystalline layers on asymmetric off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons

The off-diagonal magnetoimpedance in field-annealed CoFeSiB amorphous ribbons was measured using a pick-up coil wound around the sample. One side of a ribbon was etched in hydrofluoric acid solution during various times in order to change the thickness of the surface crystalline layer appearing after annealing. The asymmetric two-peak field dependence of the off-diagonal impedance was observed for all samples. The evolution of the off-diagonal magnetoimpedance with the change in the ribbon thickness is analyzed.     

A Reverse of bessel’s inequality in 2-inner product spaces and some grüss type related results with applications

A reverse of Bessel’s inequality in 2-inner product spaces and companions of Grüss inequality with applications for determinantal integral inequalities are given.     

Photoemission studies of oxygen adsorbed on a LiAl(1 1 0) alloy surface: Role of Li segregation

We investigated that the effect of the number of segregated Li atoms on the rate of oxidation on a LiAl alloy surface. Oxygen molecules adsorbed on the LiAl alloy react with the surface atoms to form stable oxides. The segregated Li atoms at reconstructed surfaces (c(2×2) and (2×1)) enhance the oxidation rate and form stable LiAlO_x and Li₂O. The degree of enhancement of oxidation by segregated Li atoms varies as a function of O₂ exposure and annealing temperature, where the latter is directly related to the mode of surface reconstruction by Li segregation.     

Dielectrophoretically aligned GaN nanowire rectifiers

We demonstrate GaN nanowire (NW) current rectifiers which were formed by assembling n-GaN nanowires on a patterned p-Si substrate by means of alternating current (ac) dielectrophoresis. The dielectrophoresis was accomplished at a frequency of 10 kHz with three different ac bias voltages (5, 10, and 15 V_p–p), indicating that the number of aligned GaN nanowires increased with increasing ac bias voltage. The n-GaN NW/p-Si diodes showed well-defined current rectifying behavior with a forward voltage drop of 1.2–1.5 V at a current density of 200 A/cm². We observed that the GaN NW diode functioned well as a half-wave rectifier. PACS 71.20.Nr; 73.40.Cg; 73.40.Ei; 73.40.Kp     

Surface rumpling of cubic CaTiO3 from density functional theory

In this paper, the structure of cubic CaTiO3 （001） surfaces with CaO and TiO2 terminations has been studied from density functional calculations. It has been found that the Ca atom has the largest relaxation for both kinds of terminations, and the rumpling of the CaO-terminated surface is much larger than that of TiO2-terminated surface. Also we have found that the metal atom relaxes much more prominently than the O atom does in each layer. The CaO-terminated surface is slightly more energetically favourahle than the TiO2-terminated surface from the analysis of the calculated surface energy.     

Probing antiferromagnetic order with heat capacity in exchange-biased structures

We explore the magnetic heat capacity in exchange-biased ferromagnet/antiferromagnet bilayers theoretically. We show that changes in the antiferromagnetic structure due to the reversal of the ferromagnet layer can be detected by distinct features in the heat capacity. This offers a method for probing antiferromagnetic domains in exchange-biased systems.     

Design and Experimental Characterization of Low‐Volume PM10/2.5/1.0 Trichotomous Sampler Inlet

This paper presents the development and laboratory evaluation of a PM10/2.5/1.0 trichotomous sampling inlet that consists of two main parts: a previously designed PM10 size‐selective inlet part and a PM2.5/1.0 two‐stage virtual impactor, which was newly fabricated and attached serially to the PM10 size selective inlet part. Particles are collected in three locations through the trichotomous sampling inlet to provide for not only particle concentration measurements of PM10, PM2.5 and PM1.0, but also those of PM2.5–10 and PM1.0–2.5.     

A Lagrangean heuristic algorithm for disassembly scheduling with capacity constraints

This paper considers the problem of determining the disassembly schedule (quantity and timing) of products in order to satisfy the demand of their parts or components over a finite planning horizon. The objective is to minimize the sum of set-up, disassembly operation, and inventory holding costs. As an extension of the uncapacitated versions of the problem, we consider the resource capacity restrictions over the planning horizon. An integer program is suggested to describe the problem mathematically, and to solve the problem, a heuristic is developed using a Lagrangean relaxation technique together with a method to find a good feasible solution while considering the trade-offs among different costs. The effectiveness of the algorithm is tested on a number of randomly generated problems and the test results show that the heuristic suggested in this paper can give near optimal solutions within a short amount of computation time.     

Effect of Ru crystal orientation on the adhesion characteristics of Cu for ultra-large scale integration interconnects

The adhesion of Cu on Ru substrates with different crystal orientations was evaluated. The crystal orientation of sputter deposited Ru could be changed from (1 0 0) to (0 0 1) by annealing at 650 °C for 20 min. The adhesion of Cu was evaluated by the degree of Cu agglomeration on Ru. Cu films on annealed Ru films with the (0 0 1) crystal orientation showed 28% lower RMS values and 50% lower Ru surface coverage than Cu as-deposited on Ru having the (1 0 0) crystal orientation after annealing at 550 °C for 30 min, which suggest that Cu wettability on the Ru(0 0 1) was better than that on the Ru(1 0 0) plane. The low lattice misfit of 4% between Cu(1 1 1) and Ru(0 0 1) may be the reason for this good adhesion property.     

Structural and electrical properties of core–shell structured GaP nanowires with outer Ga2O3 oxide layers

This paper presents a review of our current experimental research on GaP nanowires grown by a vapor deposition method. Their structural, electrical, opto-electric transport, and gas-adsorption properties are reviewed. Our structural studies showed that a GaP nanowire consisted of a core–shell structure with a single-crystalline GaP core and an outer Ga₂O₃ layer. The individual GaP nanowires exhibited n-type field effects. Their electron mobilities were in the range of about 6 to 22 cm²/V s at room temperature. When the nanowires were illuminated with an ultraviolet light source, an abrupt increase of conductance occurred resulting from carrier generation in the nanowire and de-adsorption of adsorbed OH^- or O₂ ^- ions on the Ga₂O₃ surface shell. Using an intrinsic Ga₂O₃ shell layer as a gate dielectric, top-gated GaP nanowire field-effect transistors were fabricated and characterized. Like other metal oxide nanowires, the carrier concentration and mobility of GaP nanowires were significantly affected by the surface molecular adsorption of OH or O₂. The GaP nanowire devices were fabricated as sensors for NO₂, NH₃, and H₂ gases by using a simple metal decoration technique. PACS 73.63.-b; 72.80.Ey; 85.35.-p