Measurements of the cross section for e(+)e(-) --> hadrons at center-of-mass energies from 2 to 5 GeV

We report values of R = sigma(e(+)e(-)-->hadrons)/sigma(e(+)e(-)-->mu(+)mu(-)) for 85 center-of-mass energies between 2 and 5 GeV measured with the upgraded Beijing Spectrometer at the Beijing Electron-Positron Collider.     

X射线荧光分析中X射线管原级能谱分布的测定

确切知道X射线管激发的原级能谱分布是X射线荧光分析中的一个重要前提,所用能谱分布函数的准确度大大影响了最终的测量结果。提出利用间接测量法,选用合适的参量模型来描述X射线的原级能谱分布。依靠实验测得的厚靶纯元素样品的荧光强度,利用已知的理论公式,建立非线性方程,优化得到参量模型中的参量值。通过比较实验测得的元素的荧光强度值和利用得到的能谱分布函数计算的理论值,证明此种方法是可行的。     

掺杂CdS超微粒的ZrO2薄膜的光学性质

研究了用溶胶凝胶方法制备的CdS超微粒 ZrO2 薄膜的发光特性 ,测量了不同退火温度处理的样品的荧光光谱、荧光激发光谱和荧光衰减曲线的变化 ,通过荧光衰减曲线研究了 14 0 ps左右的CdS的带间跃迁发射和较慢的表面态发射。还测量了这种掺有CdS超微粒的ZrO2 薄膜的飞秒光克尔效应 ,得到三阶非线性光学极化率为4 4× 10 - 1 1 esu和大约 10 0fs的响应时间。结果表明 ,这类材料具有较大的光学非线性和快速的响应时间 ,在高速光开关等方面有潜在的应用前景     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

黑腔靶辐射温度实验研究

研究腔靶辐射温度与靶型及激光辐照条件的关系.实验利用神光Ⅱ基频光,激光能量为3—5kJ8束,脉宽为0.6—0.9ns打Au腔靶.采用滤片x射线二极管(XRD)阵列谱仪及平响应x射线二极管(PXRD)分别测量腔靶诊断口辐射软x射线强度谱及其角分布,给出了等效辐射温度为140—180eV.同时,利用多针孔时、空分辨成像技术,观测诊断口发射软x射线时空特性,实验现象表明两种诊断口(衬Be环与无Be环)在160—170eV辐射温度条件下,辐射烧蚀产生的等离子体云均对腔内发射x射线流形成一定程度的阻挡作用,数据处理     

Scanning tunnelling microscope studies of growth of RuO2（110） thin layer on Ru（0001）

This paper reports that the growth of RuO_x(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO_x(110) rotated by an angle of 120℃. The as-grown RuO_x(110) thin layer is expanded from the bulk-truncated RuO_x(110) due to the large mismatch between RuO_x(110) and the Ru(0001) substrate. The results also indicate that growth of RuO_x(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO_x(110).     

Growth studies of m-GaN layers on LiAlO2 by MOCVD

This paper reports that the m-plane GaN layer is grown on （200）-plane LiAlO2 substrate by metal-organic chemical wpour deposition （MOCVD） method. Tetragonal-shaped crystallites appear at the smooth surface. Raman measurement illuminates the compressive stress in the layer which is released with increasing the layer＇s thickness. The high transmittance （80%）, sharp band edge and excitonic absorption peak show that the GaN layer has good optical quality. The donor acceptor pair emission peak located at -3.41 eV with full-width at half maximum of 120 meV and no yellow peaks in the photoluminescence spectra partially show that no Li incorporated into GaN layer from the LiAlO2 substrate.     

Quantum Games under Decoherence

Quantum systems are easily influenced by ambient environments. Decoherence is generated by system interaction with external environment. In this paper, we analyse the effects of decoherence on quantum games with Eisert-Wilkens-Lewenstein (EWL) (Eisert et al., Phys. Rev. Lett. 83(15), 3077 1999) and Marinatto-Weber (MW) (Marinatto and Weber, Phys. Lett. A 272, 291 2000) schemes. Firstly, referring to the analytical approach that was introduced by Eisert et al. (Phys. Rev. Lett. 83(15), 3077 1999), we analyse the effects of decoherence on quantum Chicken game by considering different traditional noisy channels. We investigate the Nash equilibria and changes of payoff in specific two-parameter strategy set for maximally entangled initial states. We find that the Nash equilibria are different in different noisy channels. Since Unruh effect produces a decoherence-like effect and can be perceived as a quantum noise channel (Omkar et al., arXiv:1408.1477v1), with the same two parameter strategy set, we investigate the influences of decoherence generated by the Unruh effect on three-player quantum Prisoners’ Dilemma, the non-zero sum symmetric multiplayer quantum game both for unentangled and entangled initial states. We discuss the effect of the acceleration of noninertial frames on the the game’s properties such as payoffs, symmetry, Nash equilibrium, Pareto optimal, dominant strategy, etc. Finally, we study the decoherent influences of correlated noise and Unruh effect on quantum Stackelberg duopoly for entangled and unentangled initial states with the depolarizing channel. Our investigations show that under the influence of correlated depolarizing channel and acceleration in noninertial frame, some critical points exist for an unentangled initial state at which firms get equal payoffs and the game becomes a follower advantage game. It is shown that the game is always a leader advantage game for a maximally entangled initial state and there appear some points at which the payoffs become zero.     

基于电磁拓扑的多腔体屏蔽效能快速算法

提出基于电磁拓扑理论计算开孔多腔体屏蔽效能的快速方法.首先给出双腔体等效电路和电磁拓扑信号流图,并推导孔缝节点处的散射矩阵,给出拓扑网络的散射矩阵方程和传输矩阵方程,获得双腔体的广义Baum-Liu-Tesche(BLT)方程.在此基础上研究了开孔三腔体,包括串型级联三腔体和串并型混合级联三腔体的广义BLT方程.对于串型级联三腔体,其电磁拓扑网络和广义BLT方程在双腔体基础上直接扩展即可获得.而对于串并型混合级联三腔体,通过将位于三腔体公共面上的孔缝等效为三端口网络节点,并根据三端口网络散射参数定义推导获得该节点的散射矩阵,最终得到串并型混合级联三腔体的广义BLT方程.本文方法对双腔体的计算结果与文献结果和实验结果相符合,对3组不同类型和尺寸开孔腔的屏蔽效能的计算结果与时域有限差分法计算结果符合较好.该算法不仅效率高,通过对所有计算结果和实验结果的误差统计分析,表明该算法具有较高的计算准确度.     

用于红外激光防护的高开关率VO2薄膜

采用反应离子束溅射和后退火处理技术在石英玻璃基底上制备了具有纳米粒子的二氧化钒(VO₂)薄膜. 该薄膜具有半导体-金属相变特性,在3 μm处的开关率达到76.6%。 热致相变实验结果给出了准确的最佳退火温度为465 ℃. 仿真、热致相变和光致相变实验都显示VO₂薄膜在红外波段具有很高的光学开关特性. 光电池防护实验结果显示VO₂薄膜将硅光电池的抗干扰能力提升了2.6倍, 证明了VO₂在激光防护中的适用性. 采用连续可调节系统研究得到VO₂在室温条件下的相变阈值功率密度为4.35 W/cm², 损伤阈值功率密度为404 W/cm²。 低相变阈值和高损伤阈值都进一步证明VO₂薄膜适用于激光防护系统。本实验制备的VO₂薄膜在光开关、光电存储器、智能窗等方面也具有广泛的应用价值.