大尺寸LnBa2Cu3O7-δ单晶的生长及其超导电性

本文报道大尺寸LnBa₂Cu₃O_7-δ(Ln=Y,Eu,Gd,Dy,Ho,Er,Tm,Yb,Lu)单晶生长及其超导电性,并讨论了(001)自然晶面的X射线多级衍射、劳厄相、旋进相等单晶鉴定法。 关键词：     

水平阵信号压缩感知用于简正波分离

针对水平阵信号简正波分离过程中常规波束形成分辨率低以及warping模态滤波不适用于复杂声信号的问题,提出水平阵信号压缩感知用于简正波分离的方法。利用压缩感知在方位估计中的高分辨特性,通过估计水平阵接收信号在频率方位角上的二维分布,分离得到各阶简正波的方位谱,并逆Fourier变换得到时域波形。仿真孔径1 km、阵元间隔10 m水平阵接收20~200 Hz伪随机声信号和脉冲声信号,所提方法分离出的各阶简正波与理论波形的相关系数在0.97~1.0。对2011年北黄海声学实验中的海底28元水平阵接收的气枪信号,在合成至1 km孔径后使用压缩感知方法分离简正波,其与warping模态滤波分离得的前5阶简正波相关系数在0.82~0.93。仿真与实验都说明了水平阵信号压缩感知简正波分离方法的有效性。     

阳离子香豆胶热裂解红外光谱研究

研究了香豆胶原粉、阳离子香豆胶的红外光谱归属,并测定了它们的热失重及相应热效应峰值的红外光谱(TG-IR)。根据不同温度下阳离子香豆胶光谱基团的吸收峰变化和热失重-红外光谱的分析,推断该样品可能的热解过程。     

硅探测器的数字化脉冲形状甄别

介绍了利用硅探测器的脉冲形状甄别进行粒子鉴别的原理。详细叙述了基于数字化方法的脉冲形状甄别的实现。采样频率和位数是数字化方法的两个重要参数。对于硅探测器信号,采用100 MS/s,12 bit的Digitizer可以满足脉冲形状甄别法对时间分辨的要求。同时对该方法粒子鉴别的特征和能量阈值做了简要的分析和对比。粒子背面入射硅探测器的所得的阈值低于正面入射的情况。例如对于氖周围的同位素,背面入射情况的阈值约为100 MeV,为正面入射情况下鉴别阈值的二分之一,相当与ΔE-E方法中ΔE探测器厚度约为60 μm情况下的阈值。最后定性讨论了硅探测器的电阻率不均匀性和沟道效应对粒子鉴别性能的影响。In this paper Pulse Shape Discrimination(PSD) for silicon detector has been briefly introduced. The emerging digital method successfully applied to detector signal processing makes digital PSD method one of the most promising particle identification methods. Sampling frequency and the number of bits are two key parameters of digital method. For silicon detector signal, adopting 100 Ms/s, 12 bit Digitizer can satisfy the time resolution requirement of PSD method. The identification characteristic and energy threshold of this method have been discussed and compared with both front injection and rear injection cases. Energy threshold with rear injection usually is much lower than that with front injection. For example, around for Neon isotope energy threshold with rear injection is about 100 MeV which is only half of the threshold with front injection, also equivalent to thickness of about 60 μm silicon detector threshold in ΔE-E method. At the end the impact of silicon detector's resistivity nonuniformity and channel effect on the identification capacity of PSD method has been discussed in detail.     

一种新型平板彩色显示器件的制备和光谱分析

以MEH-PPV(聚[2-甲氧基-5-(2′-乙基己氧基-对苯乙烯)])和Alq₃作为发光层, 成功制备出ITO/SiO₂/MEH-PPV/SiO₂/Al结构和ITO/SiO₂/Alq₃ /SiO₂/Al结构的固态阴极射线器件。通过分析SSCL光谱,认为这些高速电子激发有机材料后形成Frenkel激子。当器件两个电极之间加的电压比较低时,有机薄膜层的场强也比较低,这些激子被解离的概率很小,从而产生的是激子发光的长波发射;当器件两个电极之间加的电压比较高时,有机薄膜层的场强很高, 在有机层形成的激子大部分被解离, 解离后的电子直接跃迁至LUMO(lowest unoccupancied molecular orbit),这些电子弛豫后从LUMO能级到HOMO(highest occupancied molecular orbit )能级直接辐射跃迁, 接着重新复合发光,从而产生短波发射。制作的固态阴极射线器件可以实现全色发光, 提高发光效率和加强蓝光发射。作者可以预期所研制出的这种SSCL器件必将引发平板显示领域一场新的革命性变革。     

基于DIGNET网络的数据融合方法

针对数据融合和目标识别的特点,提出了基于DIGNET自组织聚类人工神经网络的数据融合方法。考虑到多传感器系统测量多个参量的特点,用并行的子网络结构代替中间隐层,实现了基于决策层的信息融合目标识别。利用仿真数据对基于DIGNET的数据融合方法进行了实验研究。实验结果表明,该方法具有数据正确分类率高和抗噪能力强等优点,有效地实现了融合识别。将该方法应用于前视红外和可见光双传感器目标跟踪系统的数据融合识别是可行的。     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.     

石英亚沸蒸馏器蒸馏浓缩富集FAAS法同时测定自来水中的铅和镉

把分析测试工作中常用来制备高纯水的石英亚沸蒸馏器用于浓缩富集自来水中的铅、镉,并用火焰原子吸收光谱法对铅、镉进行测定.     

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用TSC程序模拟了EAST装置等离子体放电的全过程。模拟中考虑了自举电流，并加入了离子回旋共振加热ICRH和快波电流驱动FWCD，得到了中心电子温度4.5keV、中心离子温度3.8keV、中心电子密度1.2×1020m–3的D形截面的等离子体。根据模拟结果对EAST装置进行了伏秒数分析，并研究了不同等离子体电流上升时间、有效电荷数Zeff对放电的影响。     

Inner Surface Modification of a Tube by Magnetic Glow-Arc Plasma Source Ion Implantation

A new method named the magnetic glow-arc plasma source ion implantation （MGA-PSⅡ） is proposed for inner surface modification of tubes. In MGA-PSⅡ, under the control of an axial magnetic field, which is generated by an electric coil around the tube sample, glow arc plasma moves spirally into the tube from its two ends. A negative voltage applied on the tube realized its inner surface implantation. Titanium nitride （TIN） films are prepared on the inner surface of a stainless steel tube in diameter 90mm and length 600mm. Hardness tests show that the hardness at the tube centre is up to 20 GPa. XRD, XPS and AES analyses demonstrate that good quality of TiN films can be achieved.